Board-Level Ku-Band Power Amplifier: Design and Challenges

References

• H. Okazaki, T. Ohira, and K. Araki, “Efficient transmission-power-control scheme for Ku-band high-power amplifiers in portable user earth terminals,” IEEE Trans. Microwave Theory Tech., Vol. 49, no. 6, pp. 1167–1173, June 2001. doi: 10.1109/22.925513
   Web of Science ®Google Scholar
• Y. Chen, M. P. van der Heijden, and D. M. W. Leenaerts. “A 1-Watt Ku-band power amplifier in SiGe with 37.5% PAE,” 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), San Francisco, CA, 2016, pp. 324-325.
   Google Scholar
• N. Saydam, and K. Yegin. “Ku band amplifier design for satcom systems,” 2016 24th Telecommunications Forum (TELFOR), Belgrade, 2016, pp. 1-4.
   Google Scholar
• S. C. Cripps. Advanced Techniques in RF power amplifier design. Norwood, MA: Artech House, 2002.
   Google Scholar
• R. S. Pengelly, S. M. Wood, J. W. Milligan, S. T. Sheppard, and W. L. Pribble, “A Review of GaN on SiC high Electron-Mobility power Transistors and MMICs,” IEEE Trans. Microwave Theory Tech., Vol. 60, no. 6, pp. 1764–1783, June 2012. doi: 10.1109/TMTT.2012.2187535
   Web of Science ®Google Scholar
• S. T. Sheppard, et al. “Technology development for GaN/AlGaN HEMT hybrid and MMIC amplifiers on semi-insulating SiC substrates,” in Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122), Ithaca, NY, USA, 2000, pp. 232–236.
   Google Scholar
• S. K. Patro, R. K. Mishra, and A. K. Panda, “A Holistic Experimental Static Bias Point Identification Method for Low power Wireless RF amplifier,” IETE. J. Res., pp. 1–11, March 2019. doi: 10.1080/03772063.2019.1593055
   Web of Science ®Google Scholar
• M. L. Sharma, “S-Band transistor power amplifier,” IETE. J. Res., Vol. 23, no. 12, pp. 729–730, 1977. doi: 10.1080/03772063.1977.11451519
   Google Scholar
• K. Kanaya, K. Sato, M. Koyanagi, H. Koyama, K. Tsujioka, A. Ohta, A. Inoue, and Y. Hirano. “A Ku-band 20 W GaN-MMIC amplifier with built-in linearizer,” 2014 IEEE MTT-S International Microwave Symposium (IMS2014), Tampa, FL, 2014, pp. 1-4.
   Google Scholar
• C. Lin, et al., “A compact 6.5-W PHEMT MMIC power amplifier for Ku-band applications,” IEEE Microwave Compon. Lett., Vol. 17, no. 2, pp. 154–156, Feb. 2007. doi: 10.1109/LMWC.2006.890347
   Web of Science ®Google Scholar
• C. Florian, R. Cignani, G. Vannini, and M. C. Comparini. “A Ku band monolithic power amplifier for TT&C applications,” 2005 European Microwave Conference, Paris, 2005, pp. 677-680.
   Google Scholar
• A. Sabban. Wideband RF Technologies and Antennas in microwave frequencies. Hoboken: John Wiley & Sons, Ltd, 2016, pp. 91–114.
   Google Scholar
• D. Maassen, F. Rautschke, T. Huellen, and G. Boeck. “A 12-W GaN-HEMT power amplifier for Ku-band satellite communication,” in 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), Krakow, 2016, pp. 1–4.
   Google Scholar
• G. Brist, and G. Long. “Advanced print circuit board materials,” in Materials for Advanced Packaging, Springer, Boston, MA, 2009. 273-306.
   Google Scholar
• J. Coonrod. “Selecting PCB materials for high-frequency applications,” Microwave Engineering Europe, pp. 18–21, Mar. 2012.
   Google Scholar
• J. Coonrod, and Rogers Corporation. “Insertion Loss Comparisons of Common High Frequency PCB Constructions,” IPC APEX EXPO Conference & Exhibition, San Diego, CA, USA, Feb. 19–21, 2013, pp. 1–7.
   Google Scholar
• J. Coonrod. “Choosing microwave PCB materials for wireless communications components,” Microwave Product Digest, 2014.
   Google Scholar
• B. C. Wadell. Transmission line design handbook. Norwood, MA: Artech House, 1991.
   Google Scholar
• A. F. Horn, J. W. Reynolds, and J. C. Rautio. “Conductor profile effects on the propagation constant of microstrip transmission lines,” in IEEE MTT-S International Microwave Symposium, Anaheim, CA, 2010, pp. 868–871.
   Google Scholar
• Rogers Corporation. “RO4003C™ high frequency material insertion loss comparison with other material types,” Roosevelt Avenue, Chandler, AZ, Application Note, 2015.
   Google Scholar
• A. Chandler, “New laminates Enable 79 GHz technology Advancements,” Microw. J. (Int. Ed), Vol. 58, no. 12, pp. 36–40, December 2015.
   Web of Science ®Google Scholar
• Hewlett Packard. “Coaxial system, principal of microwave connector care,” USA, Application Note #326, July 1986.
   Google Scholar
• AR world. “Application guide to RF coaxial connectors and cables,” RF Microwave Instrumentation, Souderton PA, Application Note #51, September 2014.
   Google Scholar
• B. Schweber. “Selecting an RF connector for your wireless system,” Digi-Key Electronics Article Library, August 2013.
   Google Scholar
• Southwest Microwave, Inc. “End launch connectors super SMA (27 GHz), 2.92 mm (40 GHz), or 2.40 mm (50 GHz),” Arizona, USA.
   Google Scholar
• B. Rosas. Optimizing test boards for 50 GHz end launch connectors: grounded coplanar launches and through lines on 30 mil Rogers 4350 with comparison to microstrip. Tempe, Arizona: Southwest Microwave, Inc., 2007.
   Google Scholar
• American Technical Ceramics. “Capacitor Pi network for impedance matching,” South Florida, Application Note #26, 2007.
   Google Scholar
• Johanson Technology. “SRF & PRF and their relation to RF capacitor applications,” California, Jan 17, 1999.
   Google Scholar
• Renesas. “Choosing and using bypass capacitors,” CA, USA, AN1325, Oct 10, 2011.
   Google Scholar
• R. Qian, A. Yao, B. Xu, Y. Liu, and C. Chew. “High power module package mounting and temperature cycling reliability study by simulation,” in 19th International Conference on Electronic Packaging Technology (ICEPT), Shanghai, 2018, pp. 1578–1574.
   Google Scholar
• K. Kuang, F. Kim, and S. Sean. Cahill, RF and microwave Microelectronics Packaging. New York: Springer Science Business Media, LLC, 2010.
   Google Scholar
• M G Chemicals. “Silver conductive epoxy adhesive slow cure/extreme conductivity 8330S,” Canada, Technical Datasheet, Mar. 2016.
   Google Scholar
• M G Chemicals. “Silver conductive epoxy adhesive good conductivity / slow cure, 8331S,” Canada, Datasheet, Oct. 2017.
   Google Scholar
• A. Hartnett, and S. Buerki. “Process and reliability advantages of AuSn eutectic die attach,” in Proceeding 42nd IMAPS, Nov. 2009, pp. 281–287.
   Google Scholar
• NAMICS Corporation. “UNIMEC H9890-6A,” Japan, Datasheet.
   Google Scholar
• K. Singh, and A. V. Nirmal. “Bond wire and its characterization at RF frequencies,” High Frequency Electronics, 2017.
   Google Scholar
• A. Sutono, N. G. Cafaro, J. Laskar, and E. Tentzeris. “Experimental study and modeling of microwave bond wire interconnects,” IEEE Antennas and Propagation Society International Symposium. Transmitting Waves of Progress to the Next Millennium. 2000 Digest. Held in conjunction with: USNC/URSI National Radio Science Meeting, Salt Lake City, UT, 2000, pp. 2020–2023.
   Google Scholar