77
Views
1
CrossRef citations to date
0
Altmetric
Articles

Sensitivity of SET Pulse-Width and Propagation to Radiation Track Parameters in CMOS Inverter Chain

& ORCID Icon

References

  • G. Hubert, L. Artola, and D. Regis, “Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation,” Integr. VLSI J., Vol. 50, pp. 39–47, June 2015. doi: 10.1016/j.vlsi.2015.01.003
  • K. R. Pasupathy and B. Bindu, “A review on circuit simulation techniques of single-event transients and their propagation in delay locked loop,” IETE Tech. Rev., Vol. 34, no. 3, pp. 276–85, June 2017. doi: 10.1080/02564602.2016.1184106
  • W. E. Calienes Bartra, A. Vladimirescu, and R. Reis, “FDSOI and bulk CMOS SRAM cell resilience to radiation effects,” Microelectr. Reliab., Vol. 64, pp. 152–7, Sept. 2016. doi: 10.1016/j.microrel.2016.07.133
  • S. Salem, H. Zandevakili, A. Mahani, and M. Saneei, “Fault-tolerant delay cell for ring oscillator application in 65 nm CMOS technology,” IET Circuits Devices Syst., Vol. 12, no. 3, pp. 233–41, May 2018. doi: 10.1049/iet-cds.2017.0380
  • K. R. Pasupathy and B. Bindu, “Widening and narrowing of time interval due to single-event transients in 45 nm vernier-type TDC,” IET Circuits Devices Syst., Vol. 11, no. 6, pp. 676–81, Nov. 2017.
  • K. R. Pasupathy and B. Bindu, “Analysis of bipolar amplification due to heavy-ion irradiation in 45 nm FDSOI MOSFET with thin BOX and ground plane,” Microelectr. Reliab., Vol. 98, no. 7, pp. 56–62, July 2019.
  • V. Ferlet-Cavrois, L. W. Massengill, and P. Gouker, “Single event transients in digital CMOS-a review,” IEEE. Trans. Nucl. Sci., Vol. 60, no. 3, pp. 1767–90, June 2013. doi: 10.1109/TNS.2013.2255624
  • J. M. Rabaey, A. P. Chandrakasan, and B. Nikolic, Digital integrated circuits. Upper Saddle River, NJ: Prentice Hall, 2002.
  • L. Artola, M. Gaillardin, G. Hubert, M. Raine, and P. Paillet, “Modeling single event transients in advanced devices and ICs,” IEEE. Trans. Nucl. Sci., Vol. 62, no. 4, pp. 1528–39, June 2015. doi: 10.1109/TNS.2015.2432271
  • M. C. Casey, et al., Single-event effects on combinational logic circuits operating at ultra-low power,” IEEE. Trans. Nucl. Sci., Vol. 55, no. 6, pp. 3342–46, Dec. 2008. doi: 10.1109/TNS.2008.2005901
  • M. J. Gadlage, R. D. Schrimpf, B. Narasimham, B. L. Bhuva, P. H. Eaton, and J. M. Benedetto, “Effect of voltage fluctuations on the single event transient response of deep submicron digital circuits,” IEEE. Trans. Nucl. Sci., Vol. 54, no. 6, pp. 2495–9, Dec. 2007. doi: 10.1109/TNS.2007.907433
  • P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, and J. R. Schwank, “Production and propagation of single-event transients in high-speed digital logic ICs,” IEEE. Trans. Nucl. Sci., Vol. 51, no. 6, pp. 3278–84, Dec. 2004. doi: 10.1109/TNS.2004.839172
  • V. Ferlet-Cavrois, et al., “Statistical analysis of the charge collected in SOI and bulk devices under heavy ion and proton irradiation-Implications for digital SETs,” IEEE. Trans. Nucl. Sci., Vol. 53, no. 6, pp. 3242–52, Dec. 2006. doi: 10.1109/TNS.2006.885111
  • G. Wirth, F. L. Kastensmidt, and I. Ribeiro, “Single event transients in logic circuits-load and propagation induced pulse broadening,” IEEE. Trans. Nucl. Sci., Vol. 55, no. 6, pp. 2928–35, Dec. 2008. doi: 10.1109/TNS.2008.2006265
  • Synopsys sentaurus TCAD tools, accessed 2 January 2018. Available: https://www.synopsys.com/silicon/tcad.html.
  • Predictive technology model, Available: http://ptm.asu.edu.
  • K. Castellani-Coulie, D. Munteanu, V. Ferlet-Cavrois, and J. -L. Autran, “Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations,” IEEE. Trans. Nucl. Sci., Vol. 52, no. 5, pp. 1474–9, Dec. 2005. doi: 10.1109/TNS.2005.855810
  • V. Ferlet-Cavrois, et al., “Large SET duration broadening in a fully-depleted SOI technology-Mitigation with body contacts,” IEEE. Trans. Nucl. Sci., Vol. 57, no. 4, pp. 1811–19, Aug. 2010. doi: 10.1109/TNS.2010.2048927
  • Y. M. Aneesh, S. R. Sriram, K. R. Pasupathy, and B. Bindu, “An analytical model of single-event transients in double-gate MOSFET for circuit simulation,” IEEE. Trans. Electron. Devices, Vol. 66, no. 9, pp. 3710–17, July 2019. doi: 10.1109/TED.2019.2926883
  • K. P. Pradhan, S. K. Saha, L. Artola, and P. K. Sahu, “3-D TCAD assessment of fin-based hybrid devices under heavy ion irradiation in 20-nm technology,” IEEE Trans. Device Mater. Reliab., Vol. 18, no. 3, pp. 474–80, Aug. 2018. doi: 10.1109/TDMR.2018.2865090

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.