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Articles

A Dielectrically Modulated GaN/AlN/AlGaN MOSHEMT with a Nanogap Embedded Cavity for Biosensing Applications

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References

  • P. Bergveld, “The development and application of FET-based biosensors,” Biosensors, Vol. 2, pp. 15–33, Jan. 1986.
  • H. Im, X.-J. Huang, B. Gu, and Y.-K. Choi, “A dielectric-modulated field-effect transistor for biosensing,” Nat. Nanotechnol., Vol. 2, pp. 430–4, Jul. 2007.
  • C. H. Kim, C. Jung, H. G. Park, and Y. K. Choi, “Novel dielectric-modulated field-effect transistor for label-free DNA detection,” Biochip. J., Vol. 2, pp. 127–34, Jun. 2009.
  • A. Moudgil, S. Singh, N. Mishra, P. Mishra, and S. Das, “Mos2/TiO2 hybrid nanostructure-based field-effect transistor for highly sensitive, selective, and rapid detection of Gram-positive bacteria.” Adv. Mater. Tech., Vol. 5, pp. 1900615, 2020.
  • R. Kirste, N. Rohrbaugh, I. Bryan, Z. Bryan, R. Collazo, and A. Ivanisevic, “Electronic biosensors based on III-Nitride semiconductors,” Annu. Rev. Anal. Chem, Vol. 8, pp. 149–69, Jul. 2015.
  • X. Li, and X. Liu, “Group III-nitride nanomaterials for biosensing,” Nanoscale., Vol. 9, pp. 7320–41, 2017.
  • F. S. Tulip, E. Eteshola, S. Desai, S. Mostafa, S. Roopa, B. Evans, and S. K. Islam, “Direct label-free electrical immunodetection of transplant rejection protein biomarker in physiological buffer using floating gate AlGaN/GaN high electron mobility transistors,” IEEE Trans. NanoBioscience, Vol. 13, no. 2, pp. 138–45, Apr. 2014.
  • O. Ambacher, et al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys, Vol. 85, pp. 3222–33, Mar. 1999.
  • L. Yang, B. Duan, Z. Dong, Y. Wang, and Y. Yang, “The analysis model of AlGaN/GaN HEMTs with electric field modulation effect,” IETE Tech. Rev., 1–12, 2019. https://doi.org/10.1080/02564602.2019.1675542
  • B. S. Kang, et al., “Prostate specific antigen detection using Al Ga N/ Ga N high electron mobility transistors,” Appl. Phys. Lett., Vol. 91, pp. 112106, 2007.
  • G. Chung, T. Vuong, and H. Kim, “Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment,” Results Phys., Vol. 12, pp. 83–4, Mar. 2019.
  • S. A. Eliza, R. Olah, and A. K. Dutta, “Nanocrystalline metal oxide gate AlGaN/GaN HEMT for detection of Co gas,” Nanosci. Nanotech. Lett, Vol. 2, no. 2, pp. 139–43, Jun. 2010.
  • R. Thapa, et al., “Bio functionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection,” Appl. Phys. Lett., Vol. 100, pp. 232109, Jun. 2012.
  • C.-T. Lee, and Y.-S. Chiu, “Photoelectrochemical passivated ZnO-based nanorod structured glucose biosensors using gate recessed AlGaN/GaN ion-sensitive field-effect-transistors,” Sens. Actuators, B, Vol. 210, pp. 756–61, Apr. 2015.
  • J. dong Li, J. jie Cheng, B. Miao, X. wei Wei, J. Xie, J. cheng Zhang, Z. qiang Zhang, and D. min Wu, “Detection of prostate specific antigen with biomolecule-gated AlGaN/GaN high electron mobility transistors,” J. Micromech. Microeng., Vol. 24, pp. 075023, Jun. 2014.
  • H. F. Huq, I. Hector Trevino, and J. Castillo, “Characteristics of AlGaN/GaN HEMT for detection of MIG,” J. Mod. Phys., Vol. 7, pp. 1712, Sep. 2016.
  • C. Lee, and Y. Chiu, “Gate-recessed AlGaN/GaN ISFET urea biosensor fabricated by photoelectrochemical method,” IEEE Sensors J., Vol. 16, pp. 1518–23, Dec. 2016.
  • A. Varghese, C. Periasamy, L. Bhargava, S. B. Dolmanan, and S. Tripathy, “Linear and circular AlGaN/AlN/GaN MOS-HEMT-based pH sensor on Si substrate: A comparative analysis,” IEEE Sensors Lett., Vol. 3, no. 4, pp. 1–4, Apr. 2019.
  • Y. Guo, X. Wang, B. Miao, Y. Li, W. Yao, Y. Xie, J. Li, D. Wu, and R. Pei, “An AuNPs-functionalized AlGaN/GaN high electron mobility transistor sensor for ultrasensitive detection of TNT,” RSC Adv., Vol. 5, pp. 98724–9, 2015.
  • Y.-L. Wang, et al., “Fast detection of a protozoan pathogen, perkinsus marinus, using AlGaN/GaN high electron mobility transistors,” Appl. Phys. Lett., Vol. 94, pp. 243901, Jun. 2009.
  • S. Yang, L. Gu, X. Ding, B. Miao, Z. Gu, L. Yang, J. Li, and D. Wu, “Disposable gate AlGaN/GaN high-electron-mobility sensor for trace-level biological detection,” IEEE Electron Device Lett., Vol. 39, no. 10, pp. 1592–5, Sep. 2018.
  • J. Yang, P. Carey, F. Ren, Y.-L. Wang, M. L. Good, S. Jang, M. A. Mastro, and S. J. Pearton, “Rapid detection of cardiac troponin i using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures,” Appl. Phys. Lett., Vol. 111, pp. 202104, Nov. 2017.
  • H. Liu, W. Hsu, W. Chen, C. Lin, C. Lee, W. Sun, S. Wei, and S. Yu, “Investigation of AlGaN/GaN ion-sensitive heterostructure field-effect transistors-based pH sensors with Al2O3 surface passivation and sensing membrane,” IEEE Sensors J., Vol. 16, no. 10, pp. 3514–22, May 2016.
  • L. Wang, L. Li, T. Zhang, X. Liu, and J. P. Ao, “Enhanced pH sensitivity of AlGaN/GaN ion-sensitive field effect transistor with Al2O3 synthesized by atomic layer deposition,” Appl. Surf. Sci., Vol. 427, pp. 1199–202, 2018.
  • N. Sharma, and N. Chaturvedi, “Design approach of traps affected source–gate regions in GaN HEMTs,” IETE Tech. Rev., Vol. 33, pp. 34–9, 2016.
  • A. Paliwal, M. Tomar, and V. Gupta, “Complex dielectric constant of various biomolecules as a function of wavelength using surface plasmon resonance,” J. Appl. Phys., Vol. 116, pp. 023109, Jul. 2014.
  • S. A. Hafiz, Iltesha, M. Ehteshamuddin, and S. A. Loan, “Dielectrically modulated source-engineered charge-plasma based schottky-FET as a label-free biosensor,” IEEE Trans. Electron Devices, Vol. 66, no. 4, pp. 1905–10, Feb. 2019.
  • N. Shafi, C. Sahu, and C. Periasamy, “Virtually doped SiGe tunnel FET for enhanced sensitivity in biosensing applications,” Superlattices Microstruct., Vol. 120, pp. 75–89, Aug. 2018.
  • H. Sun, M. Wang, J. Chen, P. Liu, W. Kuang, M. Liu, Y. Hao, and D. Chen, “Fabrication of high-uniformity and high-reliability Si3N4/AlGaN/GaN MIS-HEMTs with self-terminating dielectric etching process in a 150-mm Si Foundry,” IEEE Trans. Electron Devices, Vol. 65, no. 11, pp. 4814–9, Nov. 2018.
  • P. D. Ye, B. Yang, K. K. Ng, J. Bude, G. D. Wilk, S. Haldar, and J. C. M. Huang, “Gan metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric,” Appl. Phys. Lett., Vol. 86, no. 6, pp. 063501, 2005.
  • A. Rawat, M. Meer, V. K. Surana, N. Bhardwaj, V. Pendem, N. S. Garigapati, Y. Yadav, S. Ganguly, and D. Saha, “Thermally grown TiO2 and Al2O3 for GaN-based MOS-HEMTs,” IEEE Trans. Electron Devices, Vol. 65, pp. 3725–31, Sep. 2018.
  • S. N. Mishra, and K. Jena, “A dielectric-modulated normally-Off AlGaN/GaN MOSHEMT for bio-sensing application: Analytical modeling study and sensitivity analysis,” J. Korean Phys. Soc., Vol. 74, pp. 349–57, 2019.
  • Ajay, R. Narang, M. Saxena, and M. Gupta, “Drain current model of a four-gate dielectric modulated MOSFET for application as a biosensor,” IEEE Trans. Electron Devices, Vol. 62, no. 8, pp. 2636–44, Jun. 2015.
  • C. H. Kim, C. Jung, K. B. Lee, H. G. Park, and Y. K. Cho, “Label-free DNA detection with a nanogap embedded complementary metal oxide semiconductor,” Nanotechnology, Vol. 22, pp. 135502, Feb. 2011.
  • A. Varghese, C. Periasamy, and L. Bhargava, “Analytical modeling and simulation-based investigation of AlGaN/AlN/GaN bioHEMT sensor for c-erbB-2 detection,” IEEE Sensors J., Vol. 18, no. 23, pp. 9595–603, Sep. 2018.

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