Effects of Total Dose Radiation on Single Event Effect of the Uniaxial Strained Si Nano NMOSFET

REFERENCES

• M. Gaillardin, et al., “Comparative analysis of mechanical strain and silicon film thickness on charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation,” IEEE Trans. Nucl. Sci., Vol. 61, no. 4, pp. 1628–1634, Aug. 2014.
   Web of Science ®Google Scholar
• Q. Zhou, S.-M. Koh, T. Thanigaivelan, T. Henry, and Y.-C. Yeo, “Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering,” IEEE Trans. Electron Devices, Vol. 60, no. 4, pp. 1310–1317, Mar. 2013.
   Web of Science ®Google Scholar
• B. Wang, H.-M. Zhang, H.-Y. Hu, B. Shu, C.-Y. Zhou, and Y.-C. Li, “Analytical model for quasi-static C–V characteristics of strained-Si/SiGe pMOS capacitor,” Solid-State Electron., Vol. 79, pp. 258–261, Jan. 2013.
   Web of Science ®Google Scholar
• H. Fu, Y. Jiang, J. Ding, J. Zhang, M. Zhang, Y. Zhu, H. Li, “Zinc oxide nanoparticle incorporated grapheme oxide as sensing coating for interferometric optical microfiber for ammonia gas detection,” Sens. Actuators, B, Vol. 254, pp. 239–247, 2018.
   Web of Science ®Google Scholar
• J. R. Schwank, M. R. Shaneyfelt, D. M. Fleetwood, J. A. Felix, P. E. Dodd, P. Paillet, and V. Ferlet-Cavrois, “Radiation effects in MOS oxides,” IEEE Trans. Nuclear Science, Vol. 55, no. 4, pp. 1833–1853, Aug. 2008.
   Web of Science ®Google Scholar
• J. M. Rafí, et al., “Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric,” Solid-State Electron., Vol. 116, pp. 38–45, Feb. 2016.
   Web of Science ®Google Scholar
• W. Wu, C. Liu, J. Sun, W. Yu, X. Wang, Y. Shi, and Y. Zhao, “Experimental study on NBTI degradation behaviors in Si pMOSFETs under compressive and tensile strains,” IEEE Electron Device Lett., Vol. 35, no. 7, pp. 174–176, Jul. 2014.
   Web of Science ®Google Scholar
• A. Abderrahmane, P. J. Ko, H. Okada, S.-I. Sato, T. Ohshima, and A. Sandhu, “Proton irradiation enhancement of low-field negative magnetoresistance sensitivity of AlGaN/GaN-based magnetic sensor at cryogenic temperature,” IEEE Electron Device Lett., Vol. 35, no. 11, pp. 1130–1132, Nov. 2014.
   Web of Science ®Google Scholar
• I. Sanchez Esqueda, H. J. Barnaby, and M. P. King, “Compact modeling of total ionizing dose and aging effects in MOS technologies,” IEEE Trans. Nucl. Sci., Vol. 62, no. 4, pp. 1501–1514, Aug. 2015.
   Web of Science ®Google Scholar
• T. Nakashima, et al., “Radiation damage of Si1-xGexS/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations,” Thin Solid Films, Vol. 520, no. 8, pp. 3337–3340, Feb. 2012.
   Web of Science ®Google Scholar
• T. Nakashima, et al., “Ge content dependence of radiation damage in Si1-xGex source/drain p-type metal oxide semiconductor field effect transistors,” Phys. Status Solidi C, Vol. 10, no. 8, pp. 1148–1151, Aug. 2013.
   Google Scholar
• H. Backe, D. Krambrich, W. Lauth, K. K. Andersen, J. L. Hansen, and U. I. Uggerhøj, “Radiation emission at channeling of electrons in a strained layer Si1-xGex undulator crystal,” Nucl. Instrum. Methods Phys. Res. B, Vol. 309, no. 15, pp. 37–44, Aug. 2013.
   Google Scholar
• T. Shimura, et al., “Synchrotron X-ray topography of supercritical-thickness strained silicon-on-insulator wafers for crystalline quality evaluation and electrical characterization using back-gate transistors,” Curr. Appl. Phys., Vol. 12, no. 3, pp. S69–S74, Dec. 2012.
   Google Scholar
• M. Hao, H. Hu, B. Wang, C. Liao, H. Kang, and H. Su, “Study on the influence of γ-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET,” Solid-State Electron., Vol. 133, pp. 45–52, Jul. 2017.
   Web of Science ®Google Scholar
• Y. Du, and S. Chen, “A novel layout-based single event transient injection approach to evaluate the soft error rate of large combinational circuits in complimentary metal-oxide-semiconductor bulk technology,” IEEE Trans. Reliab., Vol. 65, pp. 248–255, Mar. 2014.
   Web of Science ®Google Scholar
• D. McMorrow, V. Ferlet-Cavrois, P. Paillet, O. Duhamel, J. Baggio, J. B. Boos, and J. S. Melinger, “Transient response of semiconductor electronics to ionizing radiation. Recent developments in charge-collection Measurement,” IEEE Trans. Nucl. Sci., Vol. 54, no. 4, pp. 1010–1017, Aug. 2007.
   Web of Science ®Google Scholar
• S. DasGupta, et al., “Use of a contacted buried n+ layer for single event mitigation in 90 nm CMOS,” IEEE Trans. Nucl. Sci., Vol. 56, no. 4, pp. 2008–2013, Aug. 2009.
   Web of Science ®Google Scholar
• B. Narasimham, et al., “Effects of guard bands and well contacts in mitigating long SETs in advanced CMOS processes,” IEEE Trans. Nucl. Sci., Vol. 55, no. 3, pp. 1708–1713, June 2008.
   Web of Science ®Google Scholar
• T. Roy, A. F. Witulski, R. D. Schrimpf, M. L. Alles, and L. W. Massengill, “Single event mechanisms in 90 nm triple-well CMOS devices,” IEEE Trans. Nucl. Sci., Vol. 55, no. 6, pp. 2948–2956, Dec. 2008.
   Web of Science ®Google Scholar
• J. Chen, S. Chen, Y. He, J. Qin, B. Liang, B. Liu, and P. Huang, “Novel layout technique for single-event transient mitigation using dummy transistor,” IEEE Trans. Device Mater. Reliab., Vol. 13, no. 1, pp. 177–184, Mar. 2013.
   Web of Science ®Google Scholar
• H. J. Barnaby, M. Mclain, and I. S. Esqueda, “Total-ionizing-dose effects on isolation oxides in modern CMOS technologies,” Nucl. Instrum. Methods Phys. Res., B, Vol. 261, pp. 1142–1145, Aug. 2007.
   Web of Science ®Google Scholar