120
Views
1
CrossRef citations to date
0
Altmetric
Electronic Circuits, Devices, and Components

Investigation on RF/Analog Performance in SiGe Pocket n-Tunnel FET

, &

References

  • R.-H. Yan, O. Abbas, and K. F. Lee, “Scaling the Si MOSFET: From bulk to SOI to bulk,” IEEE Trans. Electron Devices, Vol. 39, no. 7, pp. 1704–10, Jul. 1992. DOI: 10.1109/16.141237
  • S. Chakraborty, A. Mallik, C. K. Sarkar, and V. Ramgopal Rao, “Impact of halo doping on the subthreshold performance of deep-submicrometer CMOS devices and circuits for ultralow power analog/mixed-signal applications,” IEEE Trans. Electron Devices, Vol. 54, no. 2, pp. 241–8, 2007. DOI: 10.1109/TED.2006.888630
  • Z. Qin, Z. Wei, and A. Seabaugh, “Low-subthreshold-swing tunnel transistors,” IEEE Electron Device Lett., Vol. 27, no. 4, pp. 297–300, Apr. 2006. DOI: 10.1109/LED.2006.871855
  • W. Y. Choi, B.-G. Park, J.-D. Lee, and T.-J. K. Liu, “Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec,” IEEE Electron Device Lett., Vol. 28, no. 8, pp. 743–45, Aug. 2007. DOI: 10.1109/LED.2007.901273
  • A. M. Ionescu, and H. Riel, “Tunnel field-effect transistors as energy-efficient electronic switches,” Nature, Vol. 479, no. 7373, pp. 329–37, Nov. 2011. DOI: 10.1038/nature10679
  • G. Dewey, et al. “Fabrication, characterization, and physics of III-V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing,” in IEDM Tech. Dig., Washington, DC, USA, Dec 2011, pp. 33.6.1–33.6.4, DOI: 10.1109/IEDM.2011.6131666.
  • Q. T. Zhao, et al., “Strained Si and SiGe nanowire tunnel FETs for logic and analog applications,” IEEE J. Electron Devices Soc, Vol. 3, no. 3, pp. 103–14, May 2015. DOI: 10.1109/JEDS.2015.2400371
  • F. Mayer, et al. “Impact of SOI, Si1-xGex OI and GeOI substrates on CMOS compatible tunnel FET performance,” in IEDM Tech. Dig., San Francisco, CA, USA, Dec 2008, pp. 1–5, DOI:10.1109/IEDM.2008.4796641.
  • R. Rooyackers, et al., “Ge-source vertical tunnel FETs using a novel replacement-source integration scheme,” IEEE Trans. Electron Devices, Vol. 61, no. 12, pp. 4032–9, Dec. 2014. DOI: 10.1109/TED.2014.2365142
  • W. Li, and J. C. S. Woo, “Vertical P-TFET with a P-type SiGe pocket,” IEEE Trans. Electron Devices, Vol. 67, no. 4, pp. 1480–4, Apr. 2020. DOI: 10.1109/TED.2020.2971475
  • S. Chander, B. Bhowmick, and S. Baishya, “Heterojunction fully depleted SOI-TFET with oxide/source overlap,” Superlattices Microstruct., Vol. 86, pp. 43–50, 2015. DOI: 10.1016/j.spmi.2015.07.030
  • S. H. Kim, H. Kam, C. Hu, and T.-J. K. Liu, “Ge-source tunnel field effect transistors with record high ION/IOFF,” VLSI Symp. Tech. Dig., 178–9, 2009.
  • R. Saha, B. Bhowmick, and S. Baishya, “Impact of WFV on electrical parameters due to high-k/metal gate in SiGe channel tunnel FET,” Microelectron. Eng., Vol. 214, pp. 1–4, 2019. DOI: 10.1016/j.mee.2019.04.024
  • S. Ghosh, K. Koley, and C. K. Sarkar, “Impact of the lateral straggle on the analog and RF performance of TFET,” Microelectron. Reliab., Vol. 55, pp. 326–31, 2015. DOI: 10.1016/j.microrel.2014.10.008
  • R. Saha, K. Vanlalawmpuia, B. Bhowmick, and S. Baishya, “Deep insight into DC, RF/analog, and digital inverter performance due to variation in straggle parameter for gate modulated TFET,” Mater. Sci. Semicond. Process., Vol. 91, pp. 102–7, Mar. 2019. DOI: 10.1016/j.mssp.2018.11.011
  • R. Saha, D. K. Panda, R. Goswami, B. Bhowmick, and S. Baishya, “Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge-source DMDG TFET,” Int. J. RF Microwave Comput. Aided Eng., Vol. 31, no. 4, pp. e22579, Apr. 2021. DOI: 10.1002/mmce.22579
  • K. Sucheta Singh, S. Kumar, and K. Nigam, “Impact of interface trap charges on analog/RF and linearity performances of dual-material gate-oxide-stack double-gate TFET,” IEEE Trans. Device Mater. Reliab., Vol. 20, no. 2, pp. 404–12, Jun. 2020. DOI: 10.1109/TDMR.2020.2984669
  • S. Sahoo, S. Dash, S. R. Routray, and G. P. Mishra, “Impact of drain doping engineering on ambipolar and high-frequency performance of ZHP line-TFET,” Semicond. Sci. Technol., Vol. 35, no. 6, pp. 065003, 2020. DOI: 10.1088/1361-6641/ab7ce7
  • F. Settino, et al., “Understanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits,” IEEE Trans. Electron Devices, Vol. 64, no. 6, pp. 2736–43, Jun. 2017. DOI: 10.1109/TED.2017.2689746
  • S. Narwal, and S. S. Chauhan, “Investigation of RF and linearity performance of electrode work-function engineered HDB vertical TFET,” Micro Nano Lett., Vol. 14, no. 1, pp. 17–21, Jan. 2019. DOI: 10.1049/mnl.2018.5307
  • R. Jhaveri, N. V. Girish, and J. C. S. Woo, “Effect of pocket doping and annealing schemes on the source-pocket tunnel field-effect transistor,” IEEE Trans. Electron Devices, Vol. 58, no. 1, pp. 80–6, Jan. 2011. DOI: 10.1109/TED.2010.2089525
  • H.-Y. Chang, B. Adams, P.-Y. Chien, J. Li, and J. C. S. Woo, “Improved subthreshold and output characteristics of source-pocket Si tunnel FET by the application of laser annealing,” IEEE Trans. Electron Devices, Vol. 60, no. 1, pp. 92–6, Jan. 2013. DOI: 10.1109/TED.2012.2228006
  • TCAD Sentaurus User Guide. Mountain View, CA: Synopsys Inc., 2020.
  • H. Kao, A. S. Verhulst, W. G. Vandenberghe, B. Sorée, G. Groeseneken, and K. De Meyer, “Direct and indirect band-to-band tunneling in germanium-based TFETs,” IEEE Trans. Electron Devices, Vol. 59, no. 2, pp. 292–301, Feb. 2012. DOI: 10.1109/TED.2011.2175228
  • V. Kilchytska, et al., “Influence of device engineering on the analog and RF performances of SOI MOSFETs,” IEEE Trans. Electron Devices, Vol. 50, no. 3, pp. 577–88, Mar. 2003. DOI: 10.1109/TED.2003.810471
  • R. G. Debnath, and S. Baishya, “Impact of source-doping gradient in terms of lateral straggle on the performance of germanium epitaxial layer double-gate TFET,” Appl. Phys A: Mater. Sci. Proc., Vol. 124, no. 11, pp. 1–11, 2020. DOI: 10.1007/s00339-020-04084-2.
  • R. Saha, B. Bhowmick, and S. Baishya, “Temperature effect on RF/analog and linearity parameters in DMG FinFET,” Appl. Phys. A: Mater. Sci. Proc., Vol. 124, no. 9, pp. 642, Sep. 2018. DOI: 10.1007/s00339-018-2068-5

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.