326
Views
7
CrossRef citations to date
0
Altmetric
Original Articles

Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure

, , , , &
Pages 17-29 | Accepted 15 Dec 2012, Published online: 13 Aug 2013

References

  • Scott , J. F. and Paz de Araujo , C. A. 1989 . Ferroelectric Memories . Science , 246 ( 4936 ) : 1400 – 1405 .
  • de Araujo , C. A. P. , Cuchiaro , J. D. , McMillan , L. D. , Scott , M. C. and Scott , J. F. 1995 . Fatigue-free ferroelectric capacitors with platinum electrodes . Nature. , 374 ( 6523 ) : 627 – 629 .
  • Moll , J. L. and Tarui , Y. 1963 . A new solid state memory resistor . Electron Devices, IEEE Transactions on. , 10 ( 5 ) : 338 – 338 .
  • Ishiwara , H. 1993 . Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory Weights . Jpn. J. Appl. Phys. , 32 : 442 Copyright (C) 1993 Publication Board, Japanese Journal of Applied Physics
  • Tokumitsu , E. , Fujii , G. and Ishiwara , H. 1999 . Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures . Appl. Phys. Lett. , 75 ( 4 ) : 575
  • Tokumitsu , E. , Fujii , G. and Ishiwara , H. 2000 . Electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS)-and metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-FETs using ferroelectric SrBi2Ta2O9 film and SrTa2O6/SiON buffer layer . Jpn. J. Appl. Phys. , 39 ( 4B ) : 2125 – 2130 .
  • Scott , J. F. 2000 . Ferroelectric Memories , Berlin : Springer .
  • Sakurai , T. and Sugano , T. 1981 . Theory of continuously distributed trap states at Si-SiO2 interfaces . J. Appl. Phys. , 52 ( 4 ) : 2889 – 2896 .
  • Taoka , N. , Mizubayashi , W. , Morita , Y. , Migita , S. , Ota , H. and Takagi , S. 2011 . Nature of interface traps in Ge metal-insulator-semiconductor structures with GeO2 interfacial layers . J. Appl. Phys. , 109 ( 8 ) : 084508
  • Kuzum , D. , Park , J.-H. , Krishnamohan , T. , Wong , H. S. P. and Saraswat , K. C. 2011 . The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics . IEEE Transactions on Electron Devices. , 58 ( 4 ) : 1015 – 1022 .
  • Aizawa , K. , Park , B.-E. , Kawashima , Y. , Takahashi , K. and Ishiwara , H. 2004 . Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors . Appl. Phys. Lett. , 85 ( 15 ) : 3199
  • Chang , C.-Y. , Juan , TP-c and Lee , JY-m . 2006 . Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications . Appl. Phys. Lett. , 88 ( 7 ) : 072917
  • Tokumitsu , E. , Okamoto , K. and Ishiwara , H. 2001 . Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si Structures . Jpn. J. Appl. Phys. , 40 : 2917 – 2922 .
  • Tokumitsu , E. , Senoo , M. and Miyasako , T. 2005 . Use of ferroelectric gate insulator for thin film transistors with ITO channel . Microelectron. Eng. , 80 ( 0 ) : 305 – 308 .
  • Tanaka , H. , Kaneko , Y. and Kato , Y. 2008 . A Ferroelectric Gate Field Effect Transistor with a ZnO/Pb(Zr,Ti)O3 Heterostructure Formed on a Silicon Substrate . Jpn. J. Appl. Phys. , 47 ( 9 ) : 7527 – 7532 .
  • Miyasako , T. , Senoo , M. and Tokumitsu , E. 2005 . Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability . Appl. Phys. Lett. , 86 ( 16 ) : 162902
  • Kato , Y. , Kaneko , Y. , Tanaka , H. and Shimada , Y. 2008 . Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology . Jpn. J. Appl. Phys. , 47 ( 4 ) : 2719 – 2724 .
  • Miyasako , T. , Trinh , B. N. Q. , Onoue , M. , Kaneda , T. , Tue , P. T. , Tokumitsu , E. and Shimoda , T. 2011 . Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process . Jpn. J. Appl. Phys. , 50 ( 4 ) : 04DD09
  • Kaneko , Y. , Nishitani , Y. , Tanaka , H. , Ueda , M. , Kato , Y. , Tokumitsu , E. and Fujii , E. 2011 . Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O3 stacked structure . J. Appl. Phys. , 110 ( 8 ) : 084106
  • Nicollian , E. H. and Brews , J. R. 1982 . MOS (Metal Oxide Semiconductor) Physics and Technology , New York : Wiley .
  • Yun , M. , Ravindran , R. , Hossain , M. , Gangopadhyay , S. , Scherf , U. , Bünnagel , T. , Galbrecht , F. , Arif , M. and Guha , S. 2006 . Capacitance-voltage characterization of polyfluorene-based metal-insulator-semiconductor diodes . Appl. Phys. Lett. , 89 ( 1 ) : 013506
  • Alexe , M. 1998 . Measurement of interface trap states in metal-ferroelectric-silicon heterostructures . Appl. Phys. Lett. , 72 ( 18 ) : 2283 – 2285 .
  • Tue , P. T. , Miyasako , T. , Trinh , B. N. Q. , Jinwang , L. , Tokumitsu , E. and Shimoda , T. 2010 . Optimization of Pt and PZT Films for Ferroelectric-Gate Thin Film Transistors . Ferroelectrics , 405 ( 1 ) : 281 – 291 .
  • Huang , Z. , Zhang , Q. and Whatmore , R. W. 1999 . Structural development in the early stages of annealing of sol-gel prepared lead zirconate titanate thin films . J. Appl. Phys. , 86 ( 3 ) : 1662 – 1669 .
  • Amanuma , K. , Mori , T. , Hase , T. , Sakuma , T. , Ochi , A. and Miyasaka , Y. 1993 . Ferroelectric properties of sol-gel derived Pb(Zr, Ti)O3 thin-films . Jpn. J. Appl. Phys. , 32 ( 9B ) : 4150 – 4153 .
  • Sama , N. , Soyer , C. , Remiens , D. , Verrue , C. and Bouregba , R. 2010 . Bottom and top electrodes nature and PZT film thickness influence on electrical properties . Sens. Actuators A , 158 ( 1 ) : 99 – 105 .
  • Frunza , R. , Ricinschi , D. , Gheorghiu , F. , Apetrei , R. , Luca , D. , Mitoseriu , L. and Okuyama , M. 2011 . Preparation and characterisation of PZT films by RF-magnetron sputtering . J. Alloys Compd. , 509 ( 21 ) : 6242 – 6246 .
  • Fukushima , T. , Yoshimura , T. , Masuko , K. , Maeda , K. , Ashida , A. and Fujimura , N. 2008 . Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor . Jpn. J. Appl. Phys. , 47 ( 12 ) : 8874 – 8879 .
  • Siddiqui , J. , Cagin , E. , Chen , D. and Phillips , J. D. 2006 . ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators . Appl. Phys. Lett. , 88 ( 21 ) : 212903
  • Kim , G. H. , Ahn , B. Du , Shin , H. S. , Jeong , W. H. , Kim , H. J. and Kim , H. J. 2009 . Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors . Appl. Phys. Lett. , 94 ( 23 ) : 233501
  • Fukushima , T. , Yoshimura , T. , Masuko , K. , Maeda , K. , Ashida , A. and Fujimura , N. 2010 . Analysis of carrier modulation in channel of ferroelectric-gate transistors having polar semiconductor . Thin Solid Films. , 518 ( 11 ) : 3026 – 3029 .

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.