Advanced search
Publication Cover
Ferroelectrics Letters Section Volume 42, 2015 - Issue 1-3
Submit an article Journal homepage
132
Views
0
CrossRef citations to date
0
Altmetric
Original Articles

Sub-100 nm Ferroelectric-Gate Thin-Film Transistor with Low-Temperature PZT Fabricated on SiO2/Si Substrate

Do Hong MinhFaculty of Engineering Physics and Nanotechnology, University of Engineering and Technology, Vietnam National University, Building E4, 144 Xuan Thuy, Cau Giay, Hanoi, Vietnam
&
Bui Nguyen Quoc TrinhFaculty of Engineering Physics and Nanotechnology, University of Engineering and Technology, Vietnam National University, Building E4, 144 Xuan Thuy, Cau Giay, Hanoi, VietnamCorrespondence[email protected]
Pages 65-74 | Accepted 09 Dec 2014, Published online: 05 May 2015

References

  • I. Shong, S. Kim, H. Yin, C.J. Kim, J. Park, S. Kim, H.S. Choi, E. Lee, and Y. Park, Short channel characteristics of gallium-indium-zinc-oxide thin film transistors for three-dimensional stacking memory. IEEE Electron Device Lett., 29(6), 549–552 (2008).
  • Y. Cao, M.L. Steigerwald, C. Nuckolls, and X. Guo, Current trends in shrinking the channel length of organic transistors down to the nanoscale. Adv. Mater., 22(1), 20–32 (2010).
  • W. Zhang and S.Y. Chou, Fabrication of 60-nm transistors on 4-in. wafer using nanoimprint at all lithography levels. Appl. Phys. Lett., 83(8), 1632–1634 (2003).
  • J. Tang, Y. Wang, J.E. Klare, G.S. Tulevski, S.J. Wind, C. Nuckolls, Encoding molecular-wire formation within nanoscale sockets. Angew. Chem, 119(21), 3966–3969 (2007).
  • D. Gupta, M. Anand, S.W. Ryu, Y.K. Choi, and S.H. Yoo, Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface. Appl. Phys. Lett., 93(22), 224106 (2008).
  • G.H. Kim, B.D. Ahn, H.S. Shin, W.H. Jeong, H.J. Kim, and H.J. Kim, Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors. Appl. Phys. Lett., 94(23), 233501 (2009).
  • C.G. Choi, S.J. Seo, and B.S. Bae, Solution-processed indium-zinc oxide transparent thin-film transistors. Electrochem. Solid-State. Lett., 11(1), H7–H9 (2008).
  • H.S. Kim, M.G. Kim, Y.G. Ha, M.G. Kanatzidis, T.J. Marks, and A. Facchetti, Low-temperature solution-processed amorphous indium tin oxide field-effect transistors. J. Am. Chem. Soc., 131(31), 10826–10827 (2009).
  • T. Miyasako, B.N. Q. Trinh, M. Onoue, T. Kaneda, P.T. Tue, E. Tokumitsu, and T. Shimoda, Totally solution-processed ferroelectric-gate thin-film transistor, Appl. Phys. Lett., 97(17), 173509 (2010).
  • International Technology Roadmap for Semiconductors (ITRS), Technical Report (2012).
  • L.V. Hai, M. Takahashi, and S. Sakai, Fabrication and characterization of sub-0.6-μm ferroelectric-gate field-effect transistors. Semicond. Sci. Technol., 25(11), 115013 (2010).
  • Y. Kaneko, Y. Nishitani, M. Ueda, E. Tokumitsu, and Eiji Fujii, A 60nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming. Appl. Phys. Lett., 99(18), 182902 (2011).
  • J. Li, H. Kameda, B.N. Q. Trinh, T. Miyasako, P.T. Tue, E. Tokumitsu, T. Mitani and T. Shimoda, A low-temperature crystallization path for device-quality ferroelectric films. Appl. Phys. Lett., 97(10), 102905 (2010).
  • S.J. Choi, J.W. Han, S. Kim, D.I. Moon, M. Jang, and Y.K. Choi, High-performance polycrystalline silicon TFT on the structure of a dopant-segregated schottky-barrier source/drain. IEEE Electron Device Lett., 31(3), 228–230 (2010).
  • H. Uchida, K. Takechi, S. Nishida, and S. Kaneko, High-mobility and high-stability a-Si:H thin film transistors with smooth SiNx/a-Si interface. Jpn. J. Appl. Phys., 30(12B), 3691–3694 (1991).

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.