References
- For a recent review, see D. Hisamoto, Short course IEDM 2003 and references therein.
- Bescond , M. 2004 . 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs . IEDM Tech. Dig. , : 617
- Bescond , M. 2004 . Atomic-scale modeling of Double-Gate MOSFETs using a tight-binding Green's function formalism . Solid-State Electron. , 48 : 567
- Munteanu , D. 2003 . Unified analytical model of threshold voltage in symmetric and asymmetric Double-Gate MOSFETs . Proc. ULIS , : 35
- Harrison , S. 2004 . Electrical characterization and modelling of high-performance SON DG MOSFETs . Proc. ESSDERC , : 373
- Autran , J.L. 2004 . Quantum-mechanical analytical modeling of threshold voltage in long-channel Double-Gate MOSFET with symmetric and asymmetric gates . Nanotech Proc. , 2 : 163
- Baccarani , G. 1999 . Compact Double-Gate MOSFET Model comprising quantum-mechanical and nonstatic effects . IEEE Trans. Electron. Dev. , 46 : 1656
- Balmos3D simulation code, L2MP-CNRS, (2003).