References
- Dornberger , E. , Temmler , D. and von Ammon , W. 2002 . Defects in silicon crystals and their impact on DRAM device characteristics . J. Electrochem. Soc. , 149 : G226 – G231 .
- Winkler , R. and Behnke , G. 1994 . “ Gate oxide quality related to bulk properties and its influence on DRAM device performance ” . In Semiconductor Silicon 1994 , Edited by: Huff , H.R. , Berghol , W. and Sumino , K. 973 – 986 . Pennington, NJ : The Electrochemical Society .
- Voronkov , V.V. 1982 . The mechanism of swirl defects formation in silicon . J. Crystal Growth , 59 : 625 – 643 .
- Habu , R. , Iwasaki , T. , Harada , H. and Tomiura , A. 1994 . Diffusion behavior of point defects in Si crystal during melt growth IV: Numerical analysis . Jpn J. Appl. Phys. , 33 : 1234 – 1242 .
- Habu , R. and Tomiura , A. 1996 . Distribution of grown-in crystal defects in silicon crystals formed by point defect diffusion during melt-growth: Disappearance of the oxidation induced stacking faults-ring . Jpn J. Appl. Phys. , 35 : 1 – 9 .
- Ebe , T. 1999 . Factors determining the saturation of point defects in growing silicon crystals . J. Crystal Growth , 203 : 387 – 399 .
- Sinno , T. , Susanto , H. , Brown , R.A. , Amon , W.V. and Dornberger , E. 1999 . Boron retarded self-interstitial diffusion in Czochralski growth of silicon crystals and its role in oxidation-induced stacking-fault ring dynamics . Appl. Phys. Lett. , 75 : 1544 – 1546 .
- Bongiorno , A. and Colombo , L. 1998 . Interaction between a monovacancy and a vacancy cluster in silicon . Phys. Rev. B , 57 : 8767 – 8769 .
- Prasad , M. and Sinno , T. 2003 . Internally consistent approach for modeling solid-state aggregation. 1. Atomistic calculations of vacancy clustering in silicon . Phys. Rev. B , 68 045206
- Prasad , M. and Sinno , T. 2003 . Internally consistent approach for modeling solid-state aggregation. 2. Mean-field representation of atomistic processes . Phys. Rev. B , 68 045207
- La Magna , A. , Coffa , S. and Colombo , L. 1999 . A lattice kinetic Monte Carlo code for the description of vacancy diffusion and self-organization in Si . Nucl. Instr. Meth. B , 148 : 262 – 267 .
- Haley , B.P. 2006 . Vacancy clustering and diffusion in silicon: Kinetic lattice Monte Carlo simulations . Phys. Rev. B , 74 045217
- Pelaz , L. , Marques , L.A. , Aboy , M. and Barbolla , J. 2003 . Atomistic modeling of amorphization and recrystallization in silicon . Appl. Phys. Lett. , 82 : 2038 – 2040 .
- Aboy , M. , Pelaz , L. , Marques , L.A. , Enriquez , L. and Barbolla , J. 2003 . Atomistic analysis of defect evolution and transient enhanced diffusion in silicon . J. Appl. Phys. , 94 : 1013 – 1018 .
- Pinacho , R. , Castrillo , P. , Jaraiz , M. , Martin-Bragado , I. and Barbolla , J. 2002 . Carbon in silicon: Modeling of diffusion and clustering mechanisms . J. Appl. Phys. , 92 : 1582 – 1587 .
- Dia , J. , Kanter , J.M. , Kapur , S.S. , Seider , W.D. and Sinno , T. 2007 . A lattice kinetic Monte Carlo study of void morphological evolution during silicon crystal growth . Mol. Sim. , 33 : 733 – 745 .
- Bongiorno , A. , Colombo , L. and Diaz De La Rubia , T. 1998 . Structural and binding properties of vacancy clusters in silicon . Europhys. Lett. , 43 : 695 – 700 .
- Park , B.M. and Choi , I.S. 2000 . Formation behavior of grown-in defects in a vacancy-rich Cz-Si crystal , The ECS Proceedings Series, PV 2000-17 19
- Voronkov , V.V. and Falster , R. 1999 . Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon . J. Crystal Growth , 204 : 462 – 474 .
- Hourai , M. , Nishikawa , H. , Tanaka , T. , Umeno , S. , Asayama , E. , Nomachi , T. and Kelly , G. 1998 . Nature and generation of grown-in defects in Czochralski silicon crystal . Electrochem. Soc. Proc. , 98-1 : 453 – 467 .