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Molecular Simulation Volume 41, 2015 - Issue 10-12: Proceedings of the 3rd International Conference on Molecular Simulation
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Proceedings of the 3rd International Conference on Molecular Simulation

First-principles study of surface states in topological insulators Bi2Te3 and Bi2Se3: film thickness dependence

Takehiro KatoGraduate School of Natural Science and Technology, Kanazawa University, Kanazawa920-1192, JapanCorrespondence[email protected]
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Hiroki KotakaGraduate School of Natural Science and Technology, Kanazawa University, Kanazawa920-1192, JapanView further author information
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Fumiyuki IshiiFaculty of Mathematics and Physics, Institute of Science and Engineering, Kanazawa University, Kanazawa920-1192, JapanView further author information
Pages 892-895 | Received 31 Jan 2014, Accepted 01 Sep 2014, Published online: 09 Oct 2014

References

  • Hasan MZ, Kane CL. Colloquium: topological insulators. Rev Mod Phys. 2010;82:3045–3067.
  • Ando Y. Topological insulator materials. J. Phys Soc Jpn. 2013;82  102001-1–102001-32.
  • Garate I, Franz M. Inverse spin-galvanic effect in the interface between a topological insulator and a ferromagnet. Phys Rev Lett. 2010;104  146802-1–146802-4.
  • Ghaemi P, Mong RSK, Moore JE. In-plane transport and enhanced thermoelectric performance in thin films of the topological insulators Bi2Te3 and Bi2Se3. Phys Rev Lett. 2010;105  166603-1–166603-4.
  • Hor YS, Richardella A, Roushan P, Xia Y, Checkelsky JG, Yazdani A, Hasan MZ, Ong NP, Cava RJ. p-Type Bi2Se3 for topological insulator and low-temperature thermoelectric applications. Phys Rev B. 2009;79  195208-1–195208-5.
  • Fu L, Kane CL. Superconducting proximity effect and majorana fermions at the surface of a topological insulator. Phys Rev Lett. 2008;100  096407-1–096407-4.
  • Chen Y, Analytis J, Chu J-H, Liu Z, Mo S-K, Qi X-L, Zhang H, Lu D, Dai X, Fang Z, Zhang S, Fisher I, Hussain Z, Shen Z-X. Experimental realization of a three-dimensional topological insulator, Bi2Te3. Science. 2009;325:178–181.
  • Xia Y, Qian D, Hsieh D, Wray L, Pal A, Lin H, Bansil A, Grauer D, Hor Y, Cava R, Hasan M. Observation of a large-gap topological-insulator class with a single dirac cone on the surface. Nature. 2009;5:398–402.
  • Eremeev S, Koroteev YM, Chulkov EV. Effect of the atomic composition of the surface on the electron surface states in topological insulators . JETP Lett. 2010;91:387–391.
  • Ozaki T, Kino H, Yu J, Han MJ, Kobayashi N, Ohfuti M, Ishii F, Ohwaki T, Weng H, Terakura K. Open source package for material explorer. Available from: http://www.openmx-square.org.
  • Perdew JP, Burke K, Ernzerhof M. Generalized gradient approximation made simple. Phys Rev Lett. 1996;77:3865–3868.
  • Ozaki T. Variationally optimized atomic orbitals for large-scale electronic structures. Phys Rev B. 2003;67  155108-1–155108-8.
  • Ozaki T, Kino H. Numerical atomic basis orbitals from H to Kr. Phys Rev B. 2004;69  195113-1–195113-19.
  • Troullier N, Martins JL. Efficient pseudopotentials for plane-wave calculations. Phys Rev B. 1991;43:1993–2006.
  • Kotaka H, Ishii F, Saito M. Rashba effect on the structure of the Bi one-bilayer film: Fully relativistic first-principles calculation. Jpn Appl Phys. 2013;52  035204-1–035204-5.
  • Nakajima S. The crystal structure of Bi2Te3 − xSex. J Phys Chem Solids. 1963;24:479–485.
  • Mishra S, Satpathy S, Jepsen O. Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide. J Phys Condens Matter. 1997;9:461–470.
  • Li Y-Y, Wang G, Zhu X-G, Liu M-H, Ye C, Chen X, Wang Y-Y, He K, Wang L-L, Ma X-C, Zhang H-J, Dai X, Fang Z, Xie X-C, Liu Y, Qi X-L, Jia J-FJ, Zhang S-C, Xue Q-K. Intrinsic topological insulator Bi2Te3 thin films on Si and their thickness limit. Adv Mater. 2010;22:4002–4007.
  • Sakamoto Y, Hirahara T, Miyazaki H, Kimura S-i, Hasegawa S. Spectroscopic evidence of a topological quantum phase transition in ultrathin Bi2Se3 films. Phys Rev B. 2010;81  165432-1–165432-4.
  • Park K, Heremans JJ, Scarola VW, Minic D. Robustness of topologically protected surface states in layering of Bi2Te3 thin films. Phys Rev Lett. 2010;105  186801-1–186801-4.
  • Liu W, Peng X, Wei X, Yang H, Stocks GM, Zhong J. Surface and substrate induced effects on thin films of the topological insulators Bi2Se3 and Bi2Te3. Phys Rev B. 2013;87  205315-1–205315-6.

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