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Molecular Simulation Volume 3, 1989 - Issue 1-3: Industrial Applications of Molecular Simulation—Part II
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Original Articles

Molecular Dynamics Simulation of Transition Metals as Silicon Substrates

C. C. Matthai Department of Physics, University College, Cardiff, CF1 1XL
Pages 101-114 | Received 01 Jan 1988, Accepted 01 Jul 1988, Published online: 23 Sep 2006

References

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  • Gibson , J. M. , Batstone , J. L. , Tung , R. T. and Unterwald , F. C. 1988 . “On the origin of A and B-type NiSi2 from In-Situ Transmission Electron Microscopy and Diffraction during growth” . Phys. Rev. Lett. , submitted to
  • Bisi , O and Ossicini , S . 1987 . “First principle Investigation of the Electronic properties of Silicon-Silicide Interfaces” . Surf. Sci. , 189/190 : 285
  • Yongnian , X , Kaming , Z and Xide , X . 1986 . “Theoretical studies of metal disilicide-silicon interfaces” . Phys. Rev. B , 33 : 8602
  • Rees , N. V. and Matthai , C. C. “Schottky Barrier Heights at the NiSi2/Si(111) Interface” to be published
  • Schneider , M , Schuller , I. K. and Rahman , S . 1987 . “Epitaxial growth of Silicon: A molecular dynamics simulation” . Phys. Rev. B , 36 : 1340
  • Dodson , B. W. and Taylor , P. A. 1986 . “Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structures” . Appl. Phys. Lett. , 49 : 642
  • Torres , V. J. B. and Stoneham , A. M. 1985 . “Handbook of Interatomic Potentials III - Semiconductors” AERE-R 11947
  • Stoneham , A. M. and Taylor , R . 1981 . “Handbook of Interatomic Potentials II - Metals” AERE-R 10205
  • Ding , K and Andersen , H. C. 1987 . “Molecular Dynamics computer simulation of amorphous molybdenum-germanium alloys” . Phys. Rev. , B36 : 2675
  • Stillinger , F. H. and Weber , T. A. 1985 . “Computer simulation of local order in condensed phases of silicon” . Phys. Rev. B , 31 : 5262
  • Biswas , R and Hamann , D. R. 1985 . “Interatomic Potentials for Silicon Strucutral Energies” . Phys. Rev. Lett. , 55 : 2001
  • Tersoff , J . 1986 . “New Empirical Model for the structural properties of silicon” . Phys. Rev. Lett. , 56 : 632
  • Dodson , B. W. 1987 . “Devlopment of a many-body Tersoff potential for Silicon” . Phys. Rev. B , 35 : 2795
  • Ackland , G. J. , Tichy , G , Vitek , V and Finnis , M. W. 1987 . “Simple N-Body Potentials for the Noble metals and Nickel” AERE, TP1225

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