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High Pressure Research
An International Journal
Volume 18, 2000 - Issue 1-6
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Paper Presented At The Conference: Physics

A comparison of algainas and InGaAsP-based 1.3 μm semiconductor lasers using high pressure

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Pages 49-55 | Received 09 Sep 1999, Published online: 19 Aug 2006

References

  • Sweeney , S. J. , Phillips , A. F. , Adams , A. R. , OReilly , E. P. and Thijs , P. J. A. 1998 . Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature . International Semiconductor Laser Conference (Nara), TUB-2 . 1998 . pp. p. 63
  • Zah , C. E. , Bhat , R. , Pathak , B. N. , Favire , F. , Lin , W. , Wang , M. C. , Andreakis , N. C. , Hwang , D. M. , Koza , M. A. , Lee , T. P. , Wang , Z. , Darby , D. , Flanders , D. and Hsieh , J. J. 1994 . High-performance uncooled 1.3μm AlxGayAs/InP strained-layer quantum-well lasers for subscriber loop applications . IEEE J. Quant. Elec. , 30 : 511
  • Higashi , T. , Sweeney , S. J. , Phillips , A. F. , Adams , A. R. , OReilly , E. P. , Uchida , T. and Fujii , T. 1999 . Observation of Reduced Non-radiative Current in 1.3 μm AlGaInAs/InP Strained MQW Lasers . IEEE Phot. Tech. Lett. , 11 : 409
  • Wilkinson , V. A. and Adams , A. R. 1993 . Properties of Lattice-Matched and Strained Indium Gallium Arsenide , EMIS Datareviews Series, No. 8 p. 70 London : INSPEC .
  • Wilkinson , V. A. and Adams , A. R. 1993 . Properties of Aluminium Gallium Arsenide , EMIS Datareviews Series, No. 7 p. 82 London : INSPEC .
  • Adams , A. R. , Silver , M. and Allam , J. 1998 . “ Semiconductor Optoelectronic Devices ” . In High Pressure in Semiconductor Physics II, Semiconductors and Semimetals , Vol. 55 , 301 London : Academic Press .

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