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High Pressure Research
An International Journal
Volume 18, 2000 - Issue 1-6
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Paper Presented At The Conference: Physics

High-pressure Raman study of SnGeS3

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Pages 189-194 | Accepted 09 Sep 1999, Published online: 19 Aug 2006

References

  • Alpen , U. V. , Fenner , J. and Gmelin , E. 1975 . Semiconductors of the type MeIIMeIVS3 . Mater. Res. Bull. , 10 : 175
  • Landolt-Bornstein . 1983 . Numerical Data and Functional Relationships in Science and Technology , Edited by: Madelung , O. Vol. 17f , p. 215 and 469 Berlin : Springer-Verlag . and references therein
  • Popovic , Z. V. 1985 . Optical phonons in SnGeS3 . Phys. Rev. B , 32 : 2382
  • Zallen , R. 1974 . Pressure-Raman effects and vibrational scaling laws in molecular crystals: S8 and As2S3 . Phys. Rev. B , 9 : 4485
  • Zallen , R. and Slade , M. L. Influence of pressure and temperature on phonons in molecular chalcogenides: crystalline As4S4 and S4N4 . Phys. Rev. B , 18 5775
  • Perakis , A. , Kotsalas , I. P. , Pavlatou , E. A. and Raptis , C. 1999 . Temperature and Pressure Dependence of Raman Scattering in Amorphous GeS2 . Phys. Stat. Sol. (b) , 211 : 421

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