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High Pressure Research
An International Journal
Volume 19, 2000 - Issue 1-6
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Original Articles

Pressure sensors based on AlGaAs doped with Te and Sn

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Pages 359-365 | Received 09 Sep 1999, Published online: 19 Aug 2006

References

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  • Zilionis , S. and F'yragas , K. 1981 . I-V characteristics of an intervalley junction in graded-gap crystals . Lietuvos Fizikos Rinkinys , 5 : 35
  • Zilonis , S. , Stankiewicz , W. , Trzeciakowski , W. and Litwin-Staszewska , E. 1990 . Pressure dependence of electron transport in graded-gap AlGaAs epilayers . Proceedings of the IV International Conference on High Pressure in Semiconductor Physics . 1990 , Porto Carras, Greece. pp. p. 136
  • Litwin-Staszewska , E. , Trzeciakowski , W. , Dmowski , L. , Piotrzkowski , R. , Gonzalez , L. and Zytkiewicz , Z. 1999 . On the applicability of InGaP: Si and AlGaAs: Sn piezoresistive pressure sensors in the 2.5 GPa range . Sensors and Actuators A , 78 : 130
  • Mooney , P. M. , Parker , B. D. , Cardone , F. , Gibart , P. and Portal , J. C. 1992 . DX centers in Sn-doped AlGaAs grown by metalorganic vapor phase epitaxy at T ≥ 850°C . Appl. Phys. Lett. , 60 : 374
  • Zhan , H. H. , Kang , J. Y. , Wu , Z. Y. and Huang , Q. S. 1998 . Fine structure of DX(Sn) centers in AlGaAs . J. Appl. Phys. , 84 : 2497
  • Huang , Q. S. , Kang , J. Y. , Wu , Z. Y. and Liao , B. 1993 . Evidence for two DX-like centers in Sn-doped AlGaAs . Phys. Rev B , 47 : 13215

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