Phase transition in multicomponent semiconductor Cd_1−xMn_xGeP₂ under hydrostatic pressure up to 7 GPA

A. Yu. Mollaev Institute of Physics Daghestan Scientific Center, Russian Academy of Sciences, 367003, Makhachkala, RussiaCorrespondence[email protected]

I. K. Kamilov Institute of Physics Daghestan Scientific Center, Russian Academy of Sciences, 367003, Makhachkala, Russia

R. K. Arslanov Institute of Physics Daghestan Scientific Center, Russian Academy of Sciences, 367003, Makhachkala, Russia

U. Z. Zalibekov Institute of Physics Daghestan Scientific Center, Russian Academy of Sciences, 367003, Makhachkala, Russia

S. F. Marenkin Institute of Common and Inorganic Chemistry of the Russian Academy of Sciences, Moscow, Russia

V. M. Novotortsev Institute of Common and Inorganic Chemistry of the Russian Academy of Sciences, Moscow, Russia

S. A. Varnavskiy Institute of Common and Inorganic Chemistry of the Russian Academy of Sciences, Moscow, Russia

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References

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Demin , R. V. , Koroleva , L. I. Marenkin , S. F. Mn–doped CdGeAs2 and CdGeP2 chalcopyrites–novel materials for spintronucs . International conference on ‘Actual problems of solid in physics’ (Semicondutors–2005) . October 26–28 , Belarus, Minsk.
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Mollaev , A. Yu. , Arslanov , R. K. Daunov , M. I. 2003 . Fiz. Tekh. Vys. Davlenii , 13 ( 1 ) : 29
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Phase transition in multicomponent semiconductor Cd_1−xMn_xGeP₂ under hydrostatic pressure up to 7 GPA

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Phase transition in multicomponent semiconductor Cd1−xMnxGeP2 under hydrostatic pressure up to 7 GPA

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Phase transition in multicomponent semiconductor Cd_1−xMn_xGeP₂ under hydrostatic pressure up to 7 GPA