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High Pressure Research
An International Journal
Volume 29, 2009 - Issue 4: PROCEEDINGS OF THE XLVIITH EUROPEAN HIGH PRESSURE RESEARCH GROUP (EHPRG 47) MEETING, PARIS (FRANCE), 6–11 SEPTEMBER 2009
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Spectroscopy and transitions

Electroluminescence and band structure in p-AlxGa1−xAs/GaAs1−yPy/n-AlxGa1−xAs under uniaxial compression

E. V. Andreev Physics Department, Moscow State University, Moscow, Russia
,
E. V. Bogdanov Physics Department, Moscow State University, Moscow, Russia
,
H. Kissel R&D Department, DILAS Diodenlaser GmbH, Mainz, Germany
,
K. I. Kolokolov Physics Department, Moscow State University, Moscow, Russia
,
N. Ya. Minina Physics Department, Moscow State University, Moscow, RussiaCorrespondence[email protected]
,
S. S. Shirokov Physics Department, Moscow State University, Moscow, Russia
&
A. E. Yunovich Physics Department, Moscow State University, Moscow, Russia
 show all
Pages 495-499 | Received 04 Sep 2009, Published online: 15 Dec 2009

References

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  • Vurgaftman , I. , Meyer , J. R. and Ram-Mohan , L. R. 2001 . Band parameters for III–V compound semiconductors and their alloys . J. Appl. Phys. , 89 : 5815 – 5875 .
  • Weisbuch , C. and Vinter , B. 1991 . “ Quantum Semiconductor Structures: Fundamentals and Applications ” . San Diego : Academic Press .
  • Hong , S-C. , Kothiyal , G. P. , Debbar , N. , Bhattacharya , P. and Singh , J. 1988 . Theoretical and experimental studies of optical absorption in strained quantum-well structures for optical modulators . Phys. Rev. B , 37 : 878 – 885 .

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