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High Pressure Research
An International Journal
Volume 35, 2015 - Issue 2
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Articles

The electrical transportation and carrier behavior of ZnSe under high pressure

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Pages 117-122 | Received 04 Sep 2014, Accepted 22 Dec 2014, Published online: 27 Jan 2015

References

  • Ren J, Bowers KA, Sneed B, Dreifus DL, Cook JW, Schetzina JF, Kolbas RM. ZnSe light-emitting diodes. Appl Phys Lett. 1990;57:1901–1903. doi: 10.1063/1.104006
  • Dharmadasa IM, Samantilleke AP, Young J, Boyle MH, Bacewicz R, Wolska A. Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells. J Mater Sci: Mater Electr. 1999;10:441–445.
  • Kukimoto H. Conductivity control of ZnSe grown by MOVPE and its application for blue electroluminescence. J Crystal Growth. 1990;101:953–957. doi: 10.1016/0022-0248(90)91113-5
  • Samara GA, Drickamer HG. Pressure induced phase transitions in some II–VI compounds. J Phys Chem Solids. 1962;23:457–461. doi: 10.1016/0022-3697(62)90086-0
  • Itkin G, Hearne RG, Sterer E, Posternak MP, Potzel W. Pressure-induced metallization of ZnSe. Phys Rev B. 1995;51:3195–3197. doi: 10.1103/PhysRevB.51.3195
  • Ves S, Strössner K, Christensen EN, Kim CK, Cardona M. Pressure dependence of the lowest direct absorption edge of ZnSe. Solid State Commun. 1985;56:479–483. doi: 10.1016/0038-1098(85)90697-0
  • Karzel H, Potzel W, Köfferlein M, Schiessl W, Steiner M, Hiller U, Kalvius G, Mitchell D, Das T, Blaha P, Schwarz K, Pasternak M. Lattice dynamics and hyperfine interactions in ZnO and ZnSe at high external pressures. Phys Rev B. 1996;53:11425–11438. doi: 10.1103/PhysRevB.53.11425
  • Smith PL, Martin JE. The high-pressure structures of zinc sulphide and zinc selenide. Phys Lett. 1965;19:541–543. doi: 10.1016/0031-9163(65)90766-3
  • Smelyansky VI, Tse JS. Theoretical study on the high-pressure phase transformation in ZnSe. Phys Rev B. 1995;52:4658–4661. doi: 10.1103/PhysRevB.52.4658
  • McMahon MI, Nelmes RJ. New structural systematics in the II–VI, III–V, and Group-IV semiconductors at high pressure. Phys Status Solidi b. 1996;198:389–402. doi: 10.1002/pssb.2221980151
  • Greene RG, Luo HA, Ruoff AL. High pressure X-ray and Raman study of ZnSe. J Phys Chem Solids. 1995;56:521–524. doi: 10.1016/0022-3697(95)80020-4
  • Côté M, Zakharov O, Rubio A, Cohen ML. Ab initio calculations of the pressure-induced structural phase transitions for four II-VI compounds. Phys Rev B. 1997;55:13025–13031. doi: 10.1103/PhysRevB.55.13025
  • Pellicer-Porres J, Segura A, Muñoz V, Zúñiga J, Itié JP, Polian A, Munsch P. Cinnabar phase in ZnSe at high pressure. Phys Rev B. 2002;65:012109-1–012109-4. doi: 10.1103/PhysRevB.65.174103
  • Pellicer-Porres J, Segura A, Itié JP, Polian A, Muñoz V, Zuñiga J, Munsch P. Observation of the cinnabar phase in ZnSe at high pressure. High Press Res. 2002;22:355–359. doi: 10.1080/08957950212778
  • Sotto A, Güder HS, Pérez-pastor A, Segura A, Muñoz V, Muñoz A, Qteish A. Optical properties of high pressure phases in ZnTe 1−x Se x. High Press Res. 2002;22:315–318. doi: 10.1080/08957950212802
  • Qteish A, Munöz A. Ab initio study of the phase transformations of ZnSe under high pressure: stability of the cinnabar and SC16 phases. J Phys: Condens Matter. 2000;12:1705–1713.
  • Patterson JR, Catledge SA, Vohra YK, Akella J, Weir ST. Electrical and mechanical properties of C70 fullerene and graphite under high pressures studied using designer diamond anvils. Phys Rev Lett. 2000;85:5364–5367. doi: 10.1103/PhysRevLett.85.5364
  • Jiang JZ, Gerward L, Frost D, Secco R, Peyronneau J, Olsen JS. Grain-size effect on pressure-induced semiconductor-to-metal transition in ZnS. J Appl Phys. 1999;86:6608–6610. doi: 10.1063/1.371631
  • Long D. Effects of pressure on the electrical properties of semiconductors. Phys Rev. 1956;101:1256–1263. doi: 10.1103/PhysRev.101.1256
  • Boppart H, Wachter P. Semiconductor-metal transition in intermediate-valence Tm compounds: novel features. Phys Rev Lett. 1984;53:1759–1762. doi: 10.1103/PhysRevLett.53.1759
  • Hu TJ, Cui X, Gao Y, Han Y, Liu C, Liu B, Liu H, Ma Y, Gao C. In situ Hall effect measurement on diamond anvil cell under high pressure. Rev Sci Instrum. 2010;81:115101-1–115101-4.
  • Van der Pauw LJ. A method of measuring the resistivity and Hall coefficient on lamellae of arbitrary shape. Philips Tech Rev. 1958;20:220–224.
  • Li M, Gao CX, Ma YZ, Wang DJ, Li YC, Liu J. In situ electrical conductivity measurement of high-pressure molten (Mg[sub 0.875],Fe[sub 0.125])[sub 2]SiO[sub 4]. Appl Phys Lett. 2007;90:113507-1–113507-3.
  • Han YH, Gao C, Ma Y, Liu H, Pan Y, Luo J, Li M, He C, Huang X, Zou G, Li Y, Li X, Liu J. Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement. Appl Phys Lett. 2005;86:064104-1–064104-3.
  • Hall E. On a new action of the magnet on electric currents. Am J Math. 1879;2:287–292. doi: 10.2307/2369245
  • Li M, Gao C, Peng G, He C, Hao A, Huang X, Zhang D, Yu C, Ma Y, Zou G. Thickness measurement of sample in diamond anvil cell. Rev Sci Instrum. 2007;78:075106-1–075106-3.
  • Aven M, Segall B. Carrier mobility and shallow impurity states in ZnSe and ZnTe. Phys Rev. 1963;130:81–91. doi: 10.1103/PhysRev.130.81
  • Kranzer D. Hall and drift mobility of polar p-type semiconductors. II. Application to ZnTe, CdTe, and ZnSe. J Phys C: Solid State Phys. 1973;6:2977–2987. doi: 10.1088/0022-3719/6/20/011
  • Avdonin AN, Nedeoglo DD, Nedeoglo ND, Sirkeli VP. Electron mobility in ZnSe single crystals. Phys Status Solidi b. 2003;238:45–53. doi: 10.1002/pssb.200306590
  • Emelyanenko OV, Ivanova GN, Lagunova TS, Nedeoglo DD, Shmelev GM, Simashkevich AV. Scattering mechanisms of electrons in ZnSe crystals with high mobility. Phys Status Solidi b. 1979;96:823–833. doi: 10.1002/pssb.2220960239
  • Ray AK, Kröger FA. High-temperature electron mobility in ZnSe: Al and ZnSe: as. J Appl Phys. 1979;50:4208–4211.
  • Errandonea D, Segura A, Martínez-García D, Muñoz-San Jose V. Hall-effect and resistivity measurements in CdTe and ZnTe at high pressure: electronic structure of impurities in the zinc-blende phase and the semimetallic or metallic character of the high-pressure phases. Phys Rev B. 2009;79:125203-1–125203-6.

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