Electro-thermal coupled modeling of PIN diode limiter used in high-power microwave effects simulation

References

• Coaker BM. High-power multi-function radar receiver protection. 3rd European Radar Conference, EuRAD 2006; 2006. p. 253–256.
   Google Scholar
• Coaker BM. Radar receiver protection technology. Microwave J. 2007;50:8–24.
   Google Scholar
• White JF. Microwave semiconductor control circuit. Beijing: Science Publishing House; 1983.
   Google Scholar
• Receiver Protector Technology. Available from: http://www.cpii.com/docs/related/4/RP%20Tech%20Art.pdf
   Google Scholar
• Drozdovski NV, Drozdovskaia LM. A novel microstrip microwave passive power limiter. Int. J. Electron. 1999;86:785–790.10.1080/002072199133238
   Web of Science ®Google Scholar
• Benford J, Swegle J, Schamiloglu E. High power microwaves. 2nd ed. (series in plasmaphysics). Boca Raton, FL: Taylor & Francis; 2007.
   Google Scholar
• Taylor CD, Younan NH. Effects from high-power microwave illumination. Microwave J. 1992;6:80–96.
   Google Scholar
• Taylor CD, Giri DV. High-power microwave systems and effects. Washington, DC: Taylor & Francis; 1994.
   Google Scholar
• Sattar A. IXYS power MOSFET datasheet parameters definition. Available from: http://www.ixys.com/Documents/AppNotes/IXAN0065.pdf
   Google Scholar
• Bera SC, Bharadhwaj PS. Insight into PIN diode behaviour leads to improved control circuit. IEEE Trans. Circuits Syst. 2005;52:1–4.10.1109/TCSII.2004.839537
   Google Scholar
• Wang B, Huang KM. Effect of temperature on power response of PIN diode limiter. High Power Laser Part. Beams 2008;20:645–648.
   Google Scholar
• Zhou M, Guo QG, Huang KM. Effect on peak leakage caused by junction temperature rise in PIN diode limiter. High Power Laser Part. Beams 2008;20:277–280.
   Google Scholar
• Wang HY, Li JY, Zhou YH, Li H, Yu XY. Experiment study and PSpice simulation of PIN diode limiter. High Power Laser Part. Beams 2006;18:88–92.
   Google Scholar
• Wang HY. Theoretical and experimental study on high-power microwave effects mechanism [Doctoral dissertation]. Chengdu: University of Electronic Science and Technology of China; 2009.
   Google Scholar
• Fang JY, Liu GZ, Li P, Wang HJ, Huang WH. Experimental study of high-power microwave pulse width effect. High Power Laser Part. Beams 1999;11:639–642.
   Google Scholar
• Chen X, Du ZW, Gong K. Effect of pulse width on thermal effect of microwave pulse on PIN limiter. High Power Laser Part. Beams 2010;22:1602–1606.10.3788/HPLPB
   Google Scholar
• Wunsch DC, Bell RR. Determination of threshold failure levels of semiconductor diodes and transistors due to pulse voltages. IEEE Trans. Nucl. Sci. 1968;15:244–259.10.1109/TNS.1968.4325054
   Web of Science ®Google Scholar
• Goebel H, Hoffmann K. Full dynamic power diode model including temperature behaviour for use in circuit simulators. Proceedings of the International Symposium on Power Semiconductor Devices & ICs; 1992; Tokyo. p. 130–135.
   Google Scholar
• Neamen DA. Semiconductor physics and devices: basic principles. 3rd ed. Beijing: Publishing House of Electronics Industry; 2007.
   Google Scholar
• Elwarraki E, Sabir A. Pspice behaviour and thermal modeling of the PIN Diode: A circuit approach. The 14th IEEE International Conference on Electronics, Circuits and Systems; 2007; Marrakech. p. 1031–1034.
   Google Scholar
• Hu X, Lin S, Stanton S, Lian WY. A foster network thermal model for HEV/EV battery modeling. IEEE Trans. Ind. Appl. 2011;47:1692–1710.10.1109/TIA.2011.2155012
   Web of Science ®Google Scholar
• Gerstenmaier YC, Kiffe W, Wachutka G. Combination of thermal subsystems modelled by rapid circuit transformation. Thermal Investigation of ICs and Systems; 2007; Budapest. p. 115–120.
   Google Scholar
• http://www.skyworksinc.com/uploads/documents/200100 J.pdf; http://www.hqew.net/datasheet/CLA4606$2d000-datasheet-pdf-download-239657.html.
   Google Scholar
• Wang HY, Li JY, Zhou YH, Hu B, Yu XY. Theoretical and experimental study of CMOS inverters under high power microwave interferences. Electromagnetics. 2009;29:393–406.10.1080/02726340902953305
   Web of Science ®Google Scholar
• Wang HY, Li JY, Hao Li, Xiao KQ, Chen H. Experimental study and SPICE simulation of CMOS inverters latch-up effects due to high power microwave interference. Prog. Electromagn. Res. 2008;87:313–330.10.2528/PIER08100408
   Web of Science ®Google Scholar
• Ward AL, Tan RJ, Kual R. Calculated and measured silicon PIN limiter short-pulse damage thresholds. Microwave symposium digest. IEEE MTT-S International; 1990; Dallas, TX. p. 761–763.
   Google Scholar