90
Views
1
CrossRef citations to date
0
Altmetric
Articles

A K-band power amplifier in 0.18 μm CMOS process with slow-wave structure

, &
Pages 2269-2274 | Received 11 Jun 2015, Accepted 11 Jul 2015, Published online: 14 Aug 2015

References

  • Guan X, Hajimiri A. A 24-GHz CMOS front-end. IEEE J. Solid State Circuits. 2004;39:368–373.10.1109/JSSC.2003.821783
  • Suh B, Kim Y, Kim T, Jeon S. K- and Ka-band miniature CMOS balun with a single spiral coupled structure. J. Electromagn. Waves App. 2013;27:1910–1918.
  • Lee S, Kog S, Kim C-Y, Hong S. A low-power K-band CMOS UWB radar transceiver IC for short range detection. Radio Frequency Integrated Circuits Symposium (RFIC); 2012; Montreal: IEEE. p. 503–506.
  • Yao T, Gordon MQ, Tang KKW, et al. Algorithmic design of CMOS LNAs and PAs for 60-GHz radio. IEEE J. Solid-State Circuits. 2007;42:1044–1057.10.1109/JSSC.2007.894325
  • Cho H-Y, Yeh T-J, Liu S, Wu C-Y. High-performance slow-wave transmission lines with optimized slot-type floating shields. IEEE Trans. Electron Devices. 2009;56:1705–1711.10.1109/TED.2009.2024034
  • Ellinger F. 60-GHz SOI CMOS traveling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz. IEEE J. Solid-State Circuits. 2005;40:553–558.10.1109/JSSC.2004.840971
  • Li Z, Wang JH, Li F, Zhang Z, Chen ME. A new insight into the radiation mechanism of fast and slow traveling waves. J. Electromagn. Waves App. 2011;25:1874–1885.10.1163/156939311797454006
  • Baqir MA, Choudhury PK. Slow- and fast-waves through chiral/chiral nihility slab waveguides. J. Electromagn. Waves App. 2014;28:2229–2242.10.1080/09205071.2014.978484
  • Mangan AM, Voinigescu SP, Yang M-T, Tazlauanu M. Parameter characterization of silicon-based patterned shield and patterned ground shield coplanar waveguides. In: Proceedings GSMM; 2008 Apr 21–24; Nanjing; p. 142–145.
  • Shi J, Xiong YZ, Brinkhoff J, Issaoun A, Lin F. Resistive coupling efficiency criterion for evaluating substrate shielding structures of transformers. IEEE Electron Device Lett. 2008;29:114–117.10.1109/LED.2007.910780
  • Zhang B, Xiong Y-Z, Wang L, Hu S, Li L-W. Gain enhanced 132–160 GHz low-noise amplifier using 0.13 μm SiGe BiCMOS. Electron. Lett. 2012;48:257–259.10.1049/el.2011.3882
  • Huang P-C, Kuo J-L, Tsai Z-M, Wang H. A 22-dBm power amplifier using 0.18 μm CMOS technology. In: Microwave Symposium Digest (MTT); 2010; Anaheim, CA; p. 248–251.
  • Kuo C-C, Lin Y-H, Lu H-C, Wang H. A K-band compact fully integrated transformer power amplifier in 0.18-μm CMOS. In: Microwave conference Proceedings (APMC); 2013; Seoul; p. 579–599.
  • Kuo N-C, Kao J-C, Kuo C-C, Wang H. K-band CMOS power amplifier with adaptive bias for enhancement in back-off efficiency. In: Microwave Symposium Digest; 2011; Baltimore, MD; p. 1–4.
  • Lee J-W, Kim B-S. A K-band high-voltage four-way series-bias cascode power amplifier in 0.13 μm CMOS. IEEE Microwave Wirel. Compon. Lett. 2010;20:408–410.
  • Jen Y-N, Tsai J-H, Peng C-T, Huang T-W. A 20 to 24 GHz +16.8 dBm fully integrated power amplifier using 0.18 μm CMOS process. IEEE Microwave Wirel. Compon. Lett. 2009;19:42–44.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.