References
- Siegel PH. Terahertz technology. IEEE Trans Microw Theory Tech. 2002;50(3):910–928.
- Crowe TW, Bishop WL, Porterfield DW, et al. Opening the terahertz window with integrated diode circuits. IEEE J Solid-State Circuits. 2005;40(10):2104–2109.
- Johnson JW, LaRoch JR, Ren F, et al. Schottky rectifiers fabricated on free-standing GaN substrates. Solid State Electron. 2001;45(3):405–410.
- Maas SA. Microwave Mixers. London: Artech House, 1993. https://books.google.co.in/books?id=6SBTAAAAMAAJ.
- Thomas B, Maestrini A, Beaudin G. A low-noise fixed-tuned 300–360 Ghz sub-harmonic mixer using planar Schottky diodes. IEEE Microw Wirel Compon Lett. 2005;15(12):865–867.
- Mehdi I, Siles JV, Lee C, et al. THz diode technology: status, prospects, and applications. Proc IEEE. 2017;105(6):990–1007.
- Maestrini A, Mehdi I, Siles JV, et al. Design and characterization of a room temperature all-solid-state electronic source tunable from 2.48 to 2.75 THz. IEEE Trans Terahertz Sci Technol. 2012;2(2):177–185.
- Chattopadhyay G. Technology, capabilities, and performance of low power terahertz sources. IEEE Trans Terahertz Sci Technol. 2011;1(1):33–53.
- Maestrini A, Thomas B, Wang H, et al. Schottky diode-based terahertz frequency multipliers and mixers. Comp Rend Phys. 2010;11(7-8):480–495.
- Pearton SJ, Zolper JC, Shul RJ, et al. GaN: processing, defects, and devices. J Appl Phys. 1999;86(1):1–78.
- Schwierz F. An electron mobility model for wurtzite gan. Solid State Electron. 2005;49(6):889–895.
- Liang S, Fang Y, Xing D, et al. Gan planar Schottky barrier diode with cut-off frequency of 902 GHz. Electron Lett. 2016;52(16):1408–1410.
- Lu W, Wang L, Gu S, et al. InGaN/GaN Schottky diodes with enhanced voltage handling capability for varactor applications. IEEE Electr Device Lett. 2010;31(10):1119–1121.
- Lee J-G, Park B-R, Cho C-H, et al. Low turn-on voltage AlGaN/GaN-on-si rectifier with gated ohmic anode. IEEE Electr Device Lett. 2013;34(2):214–216.
- Matioli E, Lu B, Palacios T. Ultralow leakage current AlGaN/GaN schottky diodes with 3-d anode structure. IEEE Trans Electron Devices. 2013;60(10):3365–3370.
- Tsou C-W, Wei K-P, Lian Y-W, et al. 2.07 kV AlGaN/GaN Schottky barrier diodes on silicon with high Baliga's figure-of-merit. IEEE Electr Device Lett. 2016;37(1):70–73.
- Wong KY, Chen W, Zhou Q, et al. Zero-bias mixer based on AlGaN/GaN lateral field-effect diodes for high-temperature wireless sensor and RFID applications. IEEE Trans Electr Devices. 2009;56(12):2888–2894.
- Long He Y, et al. Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment. Chin Phys B. 2016;25(11):117305.
- Rajshekar K, Hsu H, Kumar KUM, et al. Effect of plasma fluorination in p-type snO TFTs: experiments, modeling, and simulation. IEEE Trans Electron Devices. 2019;66(3):1314–1321.
- Jian Z, et al. Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode. Chin Phys B. 2015;24(9):97303.
- Soni A, Shikha S, Shrivastava M. On the role of interface states in AlGaN/GaN Schottky recessed diodes: physical insights, performance tradeoff, and engineering guidelines. IEEE Trans Electron Devices. 2019;66(6):2569–2576.
- Schroder DK. Semiconductor material and device characterization. 3rd ed. Hoboken, NJ: Wiley; 2005.
- Hashizume T, Hasegawa H. Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes. Appl Surf Sci. 2004;234(1–4):387–394.
- Altindal S', Karadeniz S, Tug'luog'lu N, et al. The role of interface states and series resistance on the I-V and C-V characteristics in Al/SnO2/p-Si Schottky diodes. Solid State Electron. 2003;47(10):1847–1854.
- Polyakov AY, Pearton SJ, Frenzer P, et al. Radiation effects in GaN materials and devices. J Mater Chem C. 2013;1(5):877–887.
- Cai Y, Zhou Y, Chen KJ, et al. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment. IEEE Electron Device Lett. 2005;26(7):435–437.
- Jin Ha W, Chhajed S, Jae Oh S, et al. Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma. Appl Phys Lett. 2012;100(13). Article number 132104.
- Hasegawa H, Oyama S. Mechanism of anomalous current transport in n-type GaN Schottky contacts. J Vac Sci Technol B: Microelectr Nanom Struct Process Meas Phenom. 2002;20(4):1647–1655.
- Hashizume T, Kotani J, Hasegawa H. Leakage mechanism in GaN and AlGaN Schottky interfaces. Appl. Phys. Lett. 2004;84(24):4884–4886. doi:https://doi.org/10.1063/1.1762980.
- Sze S, Ng KK. Physics of semiconductor devices. 3rd ed. Hoboken, NJ: Wiley; 2006. p. 1–815.
- Padovani FA, and Stratton R. Field and thermionic-field emission in Schottky Barriers. Solid State Electronics. 1966;9(7):695–707. Doi:https://doi.org/10.1016/0038-1101(66)90097-9.
- Nakamura M, Yanagisawa H, Kuratani S, et al. Characterization of organic nano-transistors using a conductive AFM probe. Thin Solid Films. 2003;438–439:360–364.
- Yeganeh MA, Rahmatollahpur SH. Barrier height and ideality factor dependency on identically produced small au/p-si Schottky barrier diodes. Journal of Semiconductors. 2010;31(7):074001. Doi:https://doi.org/10.1088/1674-4926/31/7/074001.
- Tang AY, Drakinskiy V, Yhland K, et al. Analytical extraction of a Schottky diode model from broadband s parameters. IEEE Trans Microw Theory Tech. 2013;61(5):1870–1878.
- Chattopadhyay G, Schlecht E, Ward JS, et al. An all solid state broad-band frequency multiplier chain at 1500 Ghz. IEEE Trans Microw Theory Tech. 2004;52(5):1538–1547.
- Sahin B, Cetin H, Ayyildiz E. The effect of series resistance on capacitance voltage characteristics of Schottky barrier diodes. Solid State Commun. 2005;135(8):490–495.