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EPE Journal
European Power Electronics and Drives
Volume 5, 1996 - Issue 3-4
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Original Articles

Gate-Controlled dv/dt- and di/dt-Limitation in High Power IGBT Converters

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Pages 11-16 | Published online: 22 Sep 2015

References

  • Berry.J P.: MOSFET operating under hard switching mode: Voltage and current gradients control Conference proceedings EPE 1991, pp.130
  • Chokhawela, R.; Sobhani, S.: Switching voltage transient protection schemes for high current IGBT modules Conference proceedings APEC 1994, pp.459
  • Galluzzo, A.; et al.: Switching characteristic improvement of modern gate-controlled devices, Conference proceedings EPE 1993, pp.374
  • Gerster, Ch.: Fast high-powerthigh-voltage switch using series-connected IGBTs with active gate-controlled voltage-balancing Conference proceedings APEC 1994, pp.469
  • Hansen, A.; Havemann, H.: Design of snubber circuits for a transistor-inverter using a minimum number of components Conference proceedings IFAC 1983, pp.165–171
  • Kuratli, C.: biber, A.; Huang, Q.: A 16A IGBT-gate drive ASIC in a 18V, 3u BiCMOS technology Proceedings IEEE Symposium on Industrial Electronics (ISIE 95). July 1995
  • Ochi, S.: Driving and protecting large die IGBT and MOS power devices EPE Journal, No.3 September 1994, pp.14
  • Olijaca, M.: Reduction of IGBT switching losses through innovative gate control Power Conversion Proceedings June 1990, pp.83
  • Pessina, G.: Peirone, M.: Zimagli, C.: IGBT fast commutation, active snubber design Conference proceedings EPE 1991, Volume 1, pp.213
  • Prtterteig, A.: Rogna, T.: IGBT turn-off losses in hard switching and with a capacitive snubber Conference proceedings EPE 1991, PP.203
  • Wu, W. et al: dv/dt induced latching failure in 1200V/400A halfbridge IGBT modules, IEEE International Reliability Physics Proceedings 1994. pp.420

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