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EPE Journal
European Power Electronics and Drives
Volume 7, 1998 - Issue 3-4
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Original Articles

Barrier Lowering Effects for Metal-Silicide Schottky Diodes at High Reverse Bias

C. FurioS.G.S. THOMSON Microelectronics, Tours, France;Laboratoire d’Analyse el d’Architecture des Systèmes du CNRS, Toulouse, FranceView further author information
,
G. CharitatLaboratoire d’Analyse el d’Architecture des Systèmes du CNRS, Toulouse, FranceView further author information
,
A. LhoiteS.G.S. THOMSON Microelectronics, Tours, France
&
J.M. DilhacLaboratoire d’Analyse el d’Architecture des Systèmes du CNRS, Toulouse, FranceView further author information
Pages 7-11 | Published online: 22 Sep 2015

References

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