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Journal of Modern Optics Volume 66, 2019 - Issue 6
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Letter

High characteristic temperature 1.5 µm wavelength laser diode via Sb-based quantum dots in quantum wells

Zhanguo LiSchool of Opto-electronic Engineering, Changchun University of Science and Technology, Jilin Changchun, People’s Republic of ChinaCorrespondence[email protected]
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,
Yong WangSchool of Opto-electronic Engineering, Changchun University of Science and Technology, Jilin Changchun, People’s Republic of ChinaView further author information
,
Minghui YouInformation Technology College of Jilin Agricultural University, Jilin Changchun, People’s Republic of ChinaCorrespondence[email protected]
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&
Guojun LiuSchool of Opto-electronic Engineering, Changchun University of Science and Technology, Jilin Changchun, People’s Republic of ChinaView further author information
Pages 643-646 | Received 14 Nov 2017, Accepted 10 Mar 2018, Published online: 21 Dec 2018

References

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  • Sugawara, M.; Mukai, K.; Nakata, Y.; Otsubo, K.; Ishilkawa, H. Performance and Physics of Quantum-Dot Lasers with Self-Assembled Columnar-Shaped and 1.3 µm Emitting InGaAs Quantum Dots. IEEE J. Sel. Top. Quant. Electron. 2000, 6, 462–474. doi: 10.1109/2944.865101
  • Fiore, A.; Oesterle, U.; Stanley, R.P.; Ilegems, M. High-Efficiency Light-Emitting Diodes at 1.3 µm Using InAs-InGaAs Quantum Dots. IEEE Photon. Tech. Lett. 2000, 12, 1601–1602. doi: 10.1109/68.896320
  • Sun, H.D.; Calvez, S.; Dawson, M.D., et al. Role of Sb in the Growth and Optical Properties of 1.55 µm GaInN(Sb)As/GaNAs Quantum Well Structures by Molecular Beam Epitaxy. Appl. Phys. Lett. 2005, 87, 181908. doi: 10.1063/1.2123383
  • He, J.; Krenner, H.J.; Pryor, C.; Zhang, J.P.; Wu, Y.; Allen, D.G.; Morris, C.M.; Sherwin, M.S.; Petroff, P.M. Growth, Structural, and Optical Properties of Self-Assembled (In,Ga)As Quantum Posts on GaAs. Nano. Lett. 2007, 7, 801–805.
  • Yamamto, N.; Akahane, K.; Gozu, S., et al. Over 1.3μm Continuous-Wave Laser Emission From InGaSb Quantum-dot Laser Diode Fabricated on GaAs Substrates. Appl. Phys. Lett. 2005, 86, 203118. doi: 10.1063/1.1931046
  • Liua, H.Y.; Liew, S.L.; Badcock, T.; Mowbray, D.J.; Skolnick, M.S. p-doped 1.3 m InAs/GaAs Quantum-dot Laser with a low Threshold Current Density and High Differential Efficiency. Appl. Phys. Lett 2006, 89, 073113. doi: 10.1063/1.2336998
  • Shchekin, O.B.; Deppe, D.G. 1.3μmInAs Quantum dot Laser with T0=161 K From 0 to 80 °C. Appl. Phys. Lett. 2002, 80, 3277. doi: 10.1063/1.1476708
  • Vandervelde, T.; Lenz, M. Quantum Dots-in-a-Well Focal Plane Arrays. IEEE J. Sel. Top. Quant. Electron. 2008, 14 (4), 1150–1161. doi: 10.1109/JSTQE.2008.918246
  • Shchekin, O.B.; Deppe, D.G. Low-Threshold High-To 1.3μmInAs Quantum-Dot Lasers Due to P-Type Modulation Doping of the Active Region. IEEE Photon. Technol. Lett. 2002, 14 (9), 1231. doi: 10.1109/LPT.2002.801597

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