Raman Scattering of Reactive-ion Etched GaAs

M. Watt Department of Physics, University of St Andrews, St Andrews, Fife, KY16 9SS, Scotland; Department of Electronics and Electrical Engineering, The University, Glasgow, G12 8QQ, UK

C.M. Sotomayor-Torres Department of Physics, University of St Andrews, St Andrews, Fife, KY16 9SS, Scotland; Department of Electronics and Electrical Engineering, The University, Glasgow, G12 8QQ, UK

R. Cheung Department of Physics, University of St Andrews, St Andrews, Fife, KY16 9SS, Scotland; Department of Electronics and Electrical Engineering, Glasgow University, Glasgow, G12 8QQ, Scotland

C.D.W. Wilkinson Department of Physics, University of St Andrews, St Andrews, Fife, KY16 9SS, Scotland; Department of Electronics and Electrical Engineering, Glasgow University, Glasgow, G12 8QQ, Scotland

H.E.G. Arnot Department of Physics, University of St Andrews, St Andrews, Fife, KY16 9SS, Scotland; Department of Electronics and Electrical Engineering, Glasgow University, Glasgow, G12 8QQ, Scotland

S.P. Beaumont Department of Physics, University of St Andrews, St Andrews, Fife, KY16 9SS, Scotland; Department of Electronics and Electrical Engineering, Glasgow University, Glasgow, G12 8QQ, Scotland

References

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