Publication Cover
Numerical Heat Transfer, Part A: Applications
An International Journal of Computation and Methodology
Volume 70, 2016 - Issue 10
217
Views
3
CrossRef citations to date
0
Altmetric
Original Articles

Numerical simulation of a practical chemical vapor deposition reactor

&
Pages 1057-1071 | Received 04 Apr 2016, Accepted 09 Aug 2016, Published online: 20 Oct 2016

References

  • S. Chattopadhyay, A. Ganguly, K. Chen, and L. Chen, One-Dimensional Group III-Nitrides: Growth, Properties, and Applications in Nanosensing and Nano-Optoelectronics, Crit. Rev. Solid State Mater. Sci., vol. 34, pp. 224–279, 2009.
  • D. Steigerwald, S. Rudaz, H. Liu, R. S. Kern, W. Götz, and R. Fletcher, III–V Nitride Semiconductors for High-Performance Blue and Green Light-Emitting Devices, Jom, vol. 49(9), pp. 18–23, 1997.
  • S. Mokkapati and C. Jagadish, “III-V Compound SC for Optoelectronic Devices,” Materials Today, Volume 12, Issue 4, April 2009, Pages 22–32, ISSN 1369–7021, 2009.
  • M. A. Fraga, R. S. Pessoa, M. Massi, and H. S. Maciel, Applications of SiC-Based Thin Films in Electronic and MEMS Devices, in Yasuto Hijikata (ed.), Phy. Technol. Silicon Carbide Devices, InTech, Chapter 13, 2012.
  • J. Justice, A. Kadiyala, J. Dawson, and D. Korakakis, Group III-Nitride Based Electronic and Optoelectronic Integrated Circuits for Smart Lighting Applications, Material Research Society, MRS Proc. Archives, no. 1492, 2013.
  • A. Acharya, Group III – Nitride semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications, Himalayan Phys., vol. 5., pp. 22–26, 2014.
  • J. R. Creigton and P. Ho, Introduction to Chemical Vapor Deposition (CVD), ASM International, Chemical Vapor Deposition (#06682G), Chapter 1, 2001.
  • A. Jones and M. Hitchman, Chemical Vapour Deposition: Precursors, Processes and Applications, Royal Society of Chemistry, Cambridge, U.K, 2009.
  • Y. Jaluria, Natural Convection Heat and Mass Transfer, Pergamon Press, Oxford, U.K., 1980.
  • F. Kelecy, Coupling Momentum and Continuity Increases Cfd Robustness, ANSYS Advantage, vol. II, Issue 2, pp. 49–51, 2008.
  • J. Meng and Y. Jaluria, Numerical Simulation of GaN Growth in MOCVD Process, J. MFG. Sci. Eng., vol. 135, pp. 061013-1–061013-7, 2013.
  • J. Meng, S. Wong, and Y. Jaluria, Fabrication of Gallium Nitride Film in a Chemical Vapor Deposition Reactor, J. Therm. Sci. Eng. Appl., 7, vol. 2, pp. 021003(1)–021003(9), 2015.
  • S. Pearton and A. Polyakov, Role of Hydrogen in the CVD of Wide Bandgap Nitrade Semiconductors, Chem. Vapor Deposition, vol. 16, pp. 266–274, 2010.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.