59
Views
31
CrossRef citations to date
0
Altmetric
Original Articles

Strained- layer semiconductor superlattices

&
Pages 131-160 | Published online: 27 Sep 2006

References

  • Esaki , L. 1985 . “ Semiconductor superlattices and quantum wells ” . In Proc. 17th Int. Conf. on the Physics of Semiconductors , Edited by: Chadi , I. D. and Harrison , W. A. 473 New York : Springer-Verlag .
  • Esaki , L. 1985 . “ History and Perspectives Of Semiconductor Superlattices ” . In Synrhetic Modulated Strucrures. , Edited by: Chang , L. L. and Giessen , B. C. 3 New York : Academic Press .
  • Frank , F. C. and van der Menve , J. H. 1949 . One-dimensional dislocations. 11. Misfining monolayen and oriented overgrowth . Proc. R. SOC. London. , A198 : 216
  • Frank , F. C. 1963 . Crystal interfaces. I. Semi-infinite crystals . J. Appl. Phys. , 34 : 117
  • van der Menve , J. H. 1963 . Crystal Interfaces. II. Finite overgrowths. . J. Appl. Phys. , 34 : 123
  • van der Menve , J. H. 1978 . The role of lattice misfit in epitaxy . Crit. Rev. Solid State Mater. Sci. , 7 : 209
  • van der Menve , J. H. and Ball , C. A. B. 1975 . “ Epitaxial growth ” . In Epitarial Growrh. Part B , Edited by: Matthews , J. W. 494 New York : Academic Press .
  • Matthews , J. W. 1975 . “ Epitaxial growth ” . In Epitaxial Growth. Part 8 , Edited by: Matthews , J. W. 560 New York : Academic Press .
  • Matthews , J. W. 1975 . Defects associated with the accommodation of misfit between crystals . J. Vac. Sci. Technol. , 12 : 126
  • Matthews , J. W. and Blakeslee , A. E. 1974 . Defects in epitaxial multi-layers. I. Misfit dislocations. . J. Cryst. Growth , 27 : 118
  • Matthews , J. W. and Blakeslee , A. E. 1975 . Defects in epitaxial multi-layers. II. Dislocation pile-ups, threading dislocation, slip lines and cracks . J. Cryst. Growth , 29 : 273
  • Matthews , J. W. and Blakeslee , A. E. 1976 . Defects in epitaxial multi-layers. II. Preparation of almost perfect multilayers . J. Crysr. Growth , 32 : 265
  • Osbourn , G. C. , Biefeld , R. M. and Gourley , P. L. 1982 . A GaAsxP1. x/GaP strained-layer superlattice . Appl. Phys. Lett. , 41 : 172
  • Fritz , I. J. , Dawson , L. R. and Zipperian , T. E. 1983 . Electron mobilities in In0.20 Ga0.80AslGaAs strained-layer superlattices . Appl. Phys. Lett. , 43 : 846
  • Osbourn , G. C. 1982 . Strained-layer superlattices from lattice mismatched materials . J. Appl. Phys. , 53 : 1586
  • Osbourn , G. C. 1982 . Electronic structure of GaAsxP1−x/GaP strained-layer superlattices with x< 0.5 . J. Vac. Sci. Technol. , 21 : 469
  • Osbourn , G. C. 1983 . InxGa1−xAs/InyGa1−yAs strained-layer superlattices: a proposal for useful, new electronic materials . Phys. Rev. , 827 : 5126
  • Osbourn , G. C. 1984 . InAsSb strained-layer superlattices for long-wave-length detector applications . J. Vac. Sci. Technol. , B2 : 176
  • Osbourn , G. C. 1985 . Novel material properties of strained-layer super-lattices. . J. Vac. Sci. Technol. , A3 : 826
  • Smith , D. L. 1986 . Strain-generated electric fields in [III] growth-axis strained-layer superlattices . Solid State Commun. , 57 : 919
  • Smith , D. L. and Mailhiot , C. 1988 . Piezoelectric effects in strained-layer superlattices. . J. Appl. Phys. , 63 : 2717
  • Mailhiot , C. and Smith , D. L. 1987 . Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices. . Phys Rev. , B35 : 1242
  • Fritz , I. J. , Picraux , S. T. , Dawson , L. R. , Drummond , T. J. , Laidig , W. D. and Anderson , N. G. 1985 . Dependence of critical layer thickness on strain for In, Ga,., As/GaAs strained-layer superlattices. . Appl. Phys. Lett. , 46 : 968
  • Anderson , T. G. , Chen , Z. G. , Kulakovskii , V. D. , Uddin , A. and Vallin , J. T. 1987 . Variation of the critical layer thickness with In content in strained InxGa1−x As/GaAs quantum wells grown by molec-ular beam epitaxy. . Appl. Phys. Lett. , 51 : 752
  • Bean , J. C. , Feldman , L. C. , Fiory , A. T. , Nakahara , S. and Robinson , I. K. 1984 . GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy. . J. Vac. Sci. Technol. , A2 : 436
  • Kasper , E. 1986 . Growth and properties of Si/SiGe superlattices . Surf. Sci. , 174 : 630
  • Orders , P. J. and Usher , B. F. 1987 . Determination of critical layer thick-ness in In. Ga1−xAs/GaAs heterostructures by x-ray diffraction . Appl. Lett. Phys. , 50 : 980
  • Miles , R. H. , McGill , T. C. , Chow , P. P. , Johnson , D. C. , Hauenstein , R. J. , Nieh , C. W. and Strathman , M. D. 1988 . Dependence of critical thickness on growth temperature in GexSi1−x/Si superlattices. . Appl. Phys. Lett. , 52 : 916
  • Tsao , J. Y. , Dodson , B. W. , Picraux , S. T. and Cornelison , D. M. 1987 . Critical stresses for Si, Ge,., strained-layer plasticity . Phys. Rev. Lett. , 59 : 2455
  • Fritz , I. J. 1987 . Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxy. . Appl. Phys. Lett. , 51 : 1080
  • Hirth , J. P. and Lothe , J. 1982 . “ Theory of dislocations ” . In Theory of Dislocations. , New York : Wiley .
  • Tsao , J. Y. and Dodson , B. W. 1988 . Excess stress and the stability of strained heterostructures. . Appl. Phys. Lett. , 53 : 848
  • Zippenan , T. E. , Jones , E. D. , Dodson , B. W. , Klem , J. F. and Gourley , P. L. 1988 . Stable and metastable (Al. Ga)As/(In. Ga)As n-channel strained quantum well field-effect transistors. . Proc. GaAs/C Symp. , : 251
  • Smith , D. L. and Mailhiot , C. Theory of semiconductor superlattice electronic structure . Rev. Mod. Phys. , in press.
  • Schulman , J. N. and McGill , T. C. 1977 . Band structure of AIAs/GaAs (100) superlattices . Phys. Rev. Lett. , 39 : 1680
  • Schulman , J. N. and McGill , T. C. 1979 . Electronic properties of the AIAs/GaAs (001) interface and superlattice. . Phys. Rev. B. , 19 : 6341
  • Schulman , J. N. and McGill , T. C. 1979 . The HgTe/CdTe superlattice: proposal for a new infrared material. . Appl. Phys. Lett. , 34 : 663
  • Nucho , R. N. and Madhukar , A. 1978 . Tight-binding study of the electronic smcture of the InAsIGaSb (001) superlattice. . J. Vac. Sci. Technol. , 15 : 1530
  • Baraff , G. A. , Appelbaum , J. A. and Hamann , D. R. 1977 . Self-consistent calculation of the electronic structure at an abrupt GaAs-Ge interface . Phys. Rev. Lett. , 38 : 237
  • Pickett , W. E. , Louie , S. G. and Cohen , M. L. 1978 . Self-consistent calculations of interface states and electronic structure of the (110) interfaces of Ge/GaAs and AIAslGaAs . Phys. Rev. B , 17 : 815
  • Ihm , J. , Lam , P. K. and Cohen , M. L. 1979 . Electronic structure of the [001]InAs-GaSb superlattice . Phys. Rev. B , 20 : 4120
  • Kunc , K. and Martin , R. M. 1981 . Atomic structure and properties of polar Ge/GaAs (100) interfaces. . Phys. Rev. B , 24 : 3445
  • Van de Walle , C. G. and Martin , R. M. 1987 . Theoretical study of band offsets at semiconductor interfaces . Phys. Rev. B , 35 : 8154
  • Ciraci , S. and Batra , I. P. 1988 . Strained Si/Ge superlattices: structural stability, growth, and electronic properties . Phys. Rev. B , 38 : 1835
  • Massida , S. , Min , B. I. and Freeman , A. J. 1978 . Interface phenomena at semiconductor heterojunctions: local-density valence-band offset in GaAs/AlAs. . Phys. Rev. B , 35 : 9871
  • Christensen , N. E. 1988 . Dipole effects and band offsets at semiconductor interfaces. . Phys. Rev. B , 37 : 4528
  • Marsh , A. C. and Inkson , J. C. 1984 . Electronic properties of a (111) GaAs/Ga,1−xAlxAs heterojunction . Solid Sfate Commun. , 52 : 1037
  • Marsh , A. C. and Inkson , J. C. 1984 . Electron scattering from heterojunctions. . 1. Phys. C. , 17 : 6561
  • Marsh , A. C. and Inkson , J. C. 1986 . An empirical pseudopotential analysis of (100) and (110) GaAs/Al2Ga1−xAs heterojunctions. . J. Phys. C , 19 : 43
  • Chang , Y. C. and Schulman , J. N. 1983 . Modifications of optical pmperties of GaAdGa,., AI. As superlattices due to band mixing . Appl. Phys. Lett. , 43 : 536
  • Chang , Y. C. and Schulman , J. N. 1985 . Interband optical transitions in GaAs/Ga1−xAlx, As and InAs/GaSb superlattices . Phys. Rev. B , 31 : 2069
  • Schulman , J. N. and Chang , Y. C. 1985 . Band mixing in semiconductor superlattices. . Phys. Rev. B , 31 : 2056
  • Schulman , J. N. and Chang , Y. C. 1986 . HgTelCdTe superlattice subband dispersion . Phys. Rev. B , 33 : 2594
  • Bastard , G. 1981 . Superlattice band structure in the envelope-function approximation . Phys. Rev. B , 24 : 5693
  • Bastard , G. 1982 . Theoretical investigations of superlattice band structure in the envelope-function approximation . Phys. Rev. B , 25 : 7584
  • White , S. R. and Sham , L. J. 1981 . Electronic properties of flat-band semiconductor heterostructures. . Phys. Rev. Lett. , 47 : 879
  • Smith , D. L. and Mailhiot , C. 1986 . k·p theory of semiconductor superlatticg electronic structure. I. Formal results . Phys. Rev. B , 33 : 8345
  • Mailhiot , C. and Smith , D. L. 1986 . k·p theory of semiconductor superlattice electronic structure II. Application to Ga1−xInx, As/Al1−yInyAs [100] superlattices. . Phys. Rev. B , 33 : 8360
  • Altarelli , M. 1983 . Electronic structure and semiconductor-semimetal mnsition in InAs/GaSb superlattices. . Phys. Rev. B , 28 : 842
  • Altarelli , M. 1985 . Electronic structure of two-dimensional semiconductor systems. . J. Lumin. , 30 : 472
  • Altarelli , M. , Ekenberg , U. and Fadino , A. 1985 . Calculations of hole subbands in semiccnductor quantum wells and superlattices. . Phys. Rev. B , 32 : 5138
  • Bastard , G. 1985 . “ Envelope function approach to the superlattice band structure ” . In Proc. NATO Advanced Study Institute on Molecular Beam Epitaxy and Heterosrructures. , Edited by: Chang , L. L. and Ploog , K. 381 The Netherlands : Martinus Nijhoff . For a review article on the application of the envelope function method to the electronic structure calculation of semiconductor superlattices. see
  • People , R. , Wecht , K. W. , Alavi , K. and Cho , A. 1983 . Measurements of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48, As/In0.53Cia0.74AS, N-n heterojunction by C-V profiling . Appl. Phys. Lett. , 43 : 118
  • Capasso , F. , Mohammed , K. , Cho , A. Y. , Hull , R. and Hutchinson , A. L. 1985 . Effective mass filtering: giant quantum amplification of the photocumnt in a semiconductor superlattice . Appl. Phys. Lett. , 47 : 420
  • Capasso , F. , Mohammed , K. , Cho , A. Y. , Hull , R. and Hutchinson , A. L. 1985 . New quantum photoconductivity and large photocurrent gain by effective-mass filtering in a forward-biased superlattice. p-n junction. . Phys. Rev. Lett. , 55 : 1152
  • Shum , K. , Ho , P. P. , Alfano , R. R. , Welch , D. F. , Wicks , G. W. and Eastman , L. F. 1985 . Photoluminescence determination of well depth of Ga0.47In0.53As/AI0.48In0.52As in an ulbathin single quantum well . Phys. Rev. B , 32 : 3806
  • Stolz , W. , Tapfer , L. , Breitschwerdt , A. and Ploog , K. 1985 . Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/AI0.48sin0.52As superlattices, emitting at 1.55 μm at room temperature . Appl. Phys. A. , 38 : 97
  • Weiner , J. S. , Chemla , D. S. , Miller , D. A. B. , Wood , T. H. , Sivco , D. and Cho , A. Y. 1985 . Room-temperature excitons in 1.6-pm band-gap GaInAs/AlInAs quantum wells. . Appl. Phys. Lett. , 46 : 619
  • Sai-Halasz , G. A. , Tsu , R. and Esaki , L. 1977 . A new semiconductor superlanice. . Appl. P hys. Lett. , 30 : 65 I
  • Sai-Halasz , G. A. , Chang , L. L. , Walter , J. M. , Chang , C. A. and Esaki , L. 1978 . Optical absorption of In1-aGaxAs-GaSb,1−xAsy . Solid State Commun. , 27 : 935
  • Sai-Hdasz , G. A. , Esaki , L. and Harrison , W. 1978 . InAslGaSb superlattice energy structure and its semiconductor-semimetal transition . Phys. Rev. B , 18 : 2812
  • Kawd , N. J. , Chang , L. L. , Sal-Halasz , G. A. , Chang , C. A. and Esaki , L. 1980 . Magnetic field-induced semimetal-to-semiconductor transition in Ids-GaSb superlattices. . Appl. Phys. Lett. , 36 : 369
  • Mailhiot , C. and Smith , D. L. 1987 . Electronic structure of [001] and [I1 I] growth-axis InAdGa1−xIn, Sb strained-layer superlattices. . J. Vac. Sci. Technol. B , 5 : 1268
  • Bir , G. L. and Pikus , G. E. 1974 . Symmetry and Strain-Induced Effects in Semiconductors. , New York : Wiley .
  • Van De Walk , C. G. and Martin , R. M. 1986 . Theoretical calculations of heterojunction discontinuities in the Si/Ge system . Phys. Rev. B , 34 : 5621
  • Schirber , J. E. , Fritz , I. J. and Dawson , L. R. 1985 . Light-hole conduction in InGaAs/GaAs strained-layer superlattices . Appl. P hys. Lett. , 46 : 187
  • Cady , W. F. 1946 . Piezoelectricify , 192 New York : McGraw-Hill .
  • Mailhiot , C. and Smith , D. L. 1986 . Effects of strain-induced electric fields on the electronic structure of [111] growth-axis semiconductor superlattices . J. Vac. Sci. Technol. , 84 : 996
  • Osboum , G. C. , Gourley , P. L. , Fritz , I. I. , Biefeld , R. M. , Dawson , L. R. and Zipperian , T. E. 1987 . “ Principles and applications of semiconductor strainedlayer superlattices ” . In Semiconducfors and Semimetals , Edited by: Willardson , R. K. and Beer , A. C. Vol. 24 , 459 New York : Academic Press . A modem comprehensive review article on theoretical and experimental aspects of strained-layer superlattices can be found in
  • Brum , J. A. and Bastard , G. 1985 . Electric-field-induced dissociation of excitons in semiconductor quantum wells . Phys. Rev. B. , 3I : 3893
  • Jha , S. S. and Bloembergen , N. 1968 . Nonlinear optical susceptibility in group-IV and III-V semiconductors . Phys. Rev. , 171 : 891
  • Kaminow , I. P. and Turner , E. H. 1971 . “ Linear electrooptic materials ” . In Handbook of Lasers. , Edited by: Pressley , R. J. 452 Cleveland : CRC Press .
  • Mailhiot , C. and Smith , D. L. 1987 . Effects of compressive uniaxial stress on the electronic structure of GaAs/Ga1−xAlxAs quantum wells . Phys. Rev. B , 36 : 2942
  • Jagannath , C. , Koteles , E. S. , Lee , J. , Chen , Y. J. , Elman , B. S. and Chi , J. Y. 1986 . Uniaxial stress dependence of spatially confined excitons. . Phys. Rev. B , 34 : 7027
  • Arch , D. K. , Wicks , G. , Tonaue , T. and Staudenmann , J. L. 1985 . Optical absorption and x-ray diffraction in narrow-band-gap InAs/GaSb superlattices . J. Appl. Phys. , 58 : 3933
  • Krwmer , H. 1984 . Barrier control and measurements: abrupt semiconductor heterojunctions. . J. Vac. Sci. Technol. , R2 : 433
  • Smith , D. L. and Mailhiot , C. 1987 . Proposal for type II superlattices infrared detectors . J. Appl. Phys. , 62 : 2545
  • Mailhiot , C. and Smith , D. L. 1989 . Long-wavelength infrared detectors based on strained InAs/Ga1−xInxSb type-II superlattices. . J. Vac. Sci. Technol. , A7 : 445
  • Willardson , R. K. and Beer , A. C. , eds. 1987 . Semiconducrors and Semimetals , Vol. 24 , New York : Academic Press . Modem reviews can be found in
  • Gourley , P. L. and Biefeld , R. M. 1982 . Growth and photoluminescence characterization of a GaAs, P, JGaP strained-layer superlattice. . J. Vac. Sci. Technol. , 21 : 473
  • Fritz , I. J. , Biefeld , R. M. and Osbourn , G. C. 1983 . Photocurrent spectroscopy of a strained-layer superlattice. . Solid Sfare Commun. , 45 : 323
  • Gourley , P. L. and Biefeld , R. M. 1984 . Quantum size effects in GaAs/GaAsxP1−x sbained-layer superlanices. . Appl. Phys. Lett. , 45 : 749
  • Morkoc , H. and Unlu , H. 1987 . “ Factors affecting the performance of (AI. Ga)As/GaAs and (AI. Ga)As/InGaAs modulation-doped field-effect transistors: microwave and digital applications ” . In Semiconductors andSemimerals , Edited by: Willardson , R. K. and Beer , A. C. Vol. 24 , 135 New York : Academic Press . A recent review on the applications of GaAIAs-GalnAs modulation-doped field-effect transistors can be found in
  • Masselink , W. T. , Ketterson , A. , Klem , J. , Kopp , W. and Morkoc , H. 1985 . Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well modfet's . Electron. Lett. , 21 : 937
  • Zipperian , T. E. and Drummond , T. J. 1985 . Strained-quantum-well, modulationdoped, field-effect msistor. . Electron. Lett. , 21 : 823
  • Rosenberg , J. J. , Benlamri , M. , Kirchner , P. D. , Woodall , J. M. and Pettit , C. D. 1985 . An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT. 1985 . IEEE Device Res. Conf. Tech. Dig. , EDL-6 : 491
  • Sugiyama , Y. , Inata , T. , Fujii , T. , Nakata , Y. and Hiyamizu , S. 1986 . Conduction band edge discontinuity of In0.52Ga0.48As/In0.52-(Ga1−xAla, As)0.48As (0 ≦ x ≦ 1) heterostructures. . Jpn. J. Appl. Phys. , 25 : L648
  • 'Imamura , K. , Muto , S. , Ohnishi , H. , Fujii , T. and Yokoyama , N. 1987 . Resonant-tunnelling hot-electron transistor (RHET) using GalnAs/(AIGa)As heierostructure. . Electron. Lett. , 23 : 870
  • Fritz , I. J. , Schriber , J. E. , Jones , E. D. , Drummond , T. J. and Osbourn , G. C. 1986 . “ Hole transport and charge transfer in GaAslInGaAsl GaAs single strained quantum well structures ” . In Proc. Inr. Symp. on CaAs and Relafed Compounds , 233 IOP Publishing .
  • Osbourn , G. C. 1984 . InAsSb strained-layer superlattices for long wave-length detector applications . J. Vac. Sci. Technol. , B2 : 176
  • Yen , M. Y. , Levine , B. F. , Bethea , C. G. , Choi , K. K. and Cho , A. Y. 1987 . Molecular beam epitaxial growth and optical properties of InAs1−xSbx, in 8–12 μm wavelength range. . Appl. Phys. Lett. , 50 : 927
  • Yen , M. Y. , People , R. and Wecht , K. 1988 . Long wavelength (3–5 and 8–12 μm) photoluminescence of InAs1−x, Sbx grown on (100) GaAs by molecular-beam epitaxy. . J. Appl. Phys. , 64 : 952
  • Yen , M. Y. 1988 . Molecular-beam epitaxial growth and electrical properties of lattice mismatched InAs,., Sb, on (100) GaAs . J. Appl. Phys. , 64 : 3306
  • Kurtz , S. R. , Osbourn , G. C. , Biefeld , R. M. and Lee , S. R. 1988 . Photoluminescence and the band structure of InAsSb strained-layer superlattices . Appl. Phys. Lett. , 53 : 216
  • Kurtz , S. R. , Osbourn , G. C. , Biefeld , R. M. , Dawson , L. R. and Stein , H. J. 1988 . Extended infrared response of InAsSb strained-layer superlattices. . Appl. Phys. Lett. , 52 : 831
  • Kurtz , S. R. , Biefeld , R. M. , Dawson , L. R. , Fritz , I. J. and Zipperian , T. E. 1988 . High photoconductive gain in lateral InAsSb strainedlayer superlattice infrared detectors. . Appl. Phys. Lett. , 53 : 1961
  • Kurtz , S. R. , Dawson , L. R. , Beifeld , R. M. and Osbourn , C. C. 1988 . InAsSb strained-layer superlattices: a new class of far infrared materials . SPIE. , 930 : 101
  • Voisin , P. , Delalande , C. , Voos , M. , Chang , L. L. , Segmuller , A. , Chang , C. A. and Esaki , L. 1984 . Light and heavy valence subband reversal in GaSb/AISb superlattices . Phys. Rev. B , 30 : 2276
  • Lefebvre , P. , Gil , B. , Allegre , J. , Mathieu , H. , Chen , Y. and Raisin , C. 1987 . Nonparabolic behavior of GaSb-AISb quantum wells under hydrostatic pressure . Phys. Rev. B , 35 : 1230
  • Gualtieri , G. J. , Schwartz , G. P. , Nuzzo , R. G. and Sunder , W. A. 1986 . X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity . Appl. Phys. Lett. , 49 : 1037
  • Miyazawa , T. , Tarucha , S. , Ohmori , Y. , Suzuki , Y. and Okamoto , H. 1986 . Observation of room temperature excitons in GaSb/AIGaSb multi-quantum wells . Jpn. J. Appl. Phys. , 25 : L200
  • Kato , H. , Iguchi , N. , Chika , S. , Nakayama , M. and Sano , N. 1986 . Photoluminescence study of InxAl1−xAs/GaAs strained-layer superlattices. . J. Appl. Phys. , 59 : 588
  • Kolodziejski , L. A. , Gunshor , R. L. , Otsuka , N. , Datta , S. , Becker , W. M. and Nurmikko , A. V. 1986 . Widegap II-VI superlattices. . IEEE J. Quanfum Electron. , QE-22 : 1666 A recent review of the properties of wide-gap and semimagnetic II-VI superlattices can be found in
  • Hefetz , Y. , Nakahara , J. , Nurmikko , A. V. , Kolodziejski , L. A. , Gunshor , R. L. and Datta , S. 1985 . Optical properties of ZnSe/(Zn. Mn)Se multiple quantum wells . Appl. Phys. Lett. , 47 : 989
  • Chang , S. K. , Nurmikko , A. V. , Wu , J. W. , Kolodziejski , L. A. and Gunshor , R. L. 1988 . Band offsets and excitons in CdTe/(Cd. Mn)Te quantum wells. . Phys. Rev. B , 37 : 1191
  • Zhang , X. C. , Chang , S. K. , Nurmikko , V. , Kolodziejski , L. A. , Gunshor , R. L. and Datta , S. 1985 . Interface localization of excitons in CdTe/Cd,., Mn, Te multiple quantum wells . Phys. Rev. B , 31 : 4056
  • Harris , K. A. , Hwang , S. , Lansari , Y. , Cook , J. W. Jr. and Schetzina , J. F. 1986 . Growth and properties of dilute magnetic semiconductor superlattices containing Hg1−xMnxTe . Appl. Phys. Lett. , 49 : 7 13
  • Miles , R. H. , Wu , G. Y. , Johnson , M. B. , McGill , T. C. , Faurie , J. P. and Sivananthan , S. 1986 . Photoluminescence studies of ZnTelCdTe strained-layer superlattices . Appl. Phys. Lett. , 48 : 1383
  • 1986 . A recent review on the physics and applications of Si/Si1−xGex strainedlayer superlattices can be found in People, R., Physics and applications of GexSi1−x/Si strained-layer heterostmctures . IEEE J. Quunrum MecIron. , QE-22 : 1696
  • People , R. , Bean , J. C. , Lang , D. V. , Sergent , A. M. , Stormer , H. L. , Wecht , K. , Lynch , R. T. and Baldwin , K. 1984 . Modulation doping in GexSi1. x/Si strained-layer heterostructures . Appl. Phys. Lett. , 45 : 1231
  • Bean , J. C. , Feldman , L. C. , Fiory , A. T. , Nakahara , S. and Robinson , I. K. 1984 . GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy. . J. Vac. Sci. Technol. , A2 : 436
  • Beery , J. G. , Laurich , B. K. , Maggiore , C. J. , Smith , D. L. , Elcess , K. , Fonstad , C. G. and Mailhiot , C. 1989 . Growth and characterization of (111) oriented GalnAs/GaAs strained-layer superlattices. . Appl. Phys. Lett. , 54 : 233
  • Laurich , B. K. , Elcess , K. , Fonstad , C. G. , Beery , J. G. , Mailhiot , C. and Smith , D. L. 1989 . Optical properties of (100)- and (I I I)-oriented GaInAs/GaAs strained-layer superlattices. . Phys. Rev. Lett. , 62 : 649
  • Laurich , B. K. , Smith , D. L. , Elcess , K. , Fonstad , C. G. and Mailhiot , C. 1989 . Study of the optical properties of (100) and (111) oriented GaInAs/GaAs strained-layer superlattices. . Superlurr. Microsrruc. , 5 : 341
  • Andersson , T. G. , Chen , Z. G. , Kulakovskii , V. D. , Uddin , A. and Vallin , J. T. 1988 . Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxygrown InxGa1−xAs/GaAs quantum wells . Phys. Rev. B , 37 : 4032
  • Marzin , J. Y. , Charasse , M. N. and Sermage , B. 1985 . Optical investigation of a new type of valence-band configuration in InxGa1−xAs/GaAs strained superlattices . Phys. Rev. B , 31 : 8298
  • Fritz , I. J. , Doyle , B. L. , Drummond , T. J. , Biefeld , R. M. and Osbourn , G. C. 1986 . Derivative photocumnt spectrum of an InGaAsl GaAs strained-layer superlattice. . Appl. Phys. Lett. , 48 : 1606
  • Menendez , J. , Pinczuk , A. , Werden , D. J. , Sputz , S. K. , Miller , R. C. , Sivco , D. L. and Cho , A. Y. 1987 . Large valence-band offset in strained-layer In, Ga,., As/GaAs quantum wells . Phys. Rev. B , 36 : 8165
  • Hayakawa , T. , Takahashi , K. , Kondo , M. , Suyama , T. , Yamamoto , S. and Hijikata , T. 1988 . Enhancement in optical transition in (111)-oriented GaAs-AIGaAs quantum well structures . Phys. Rev. Lett. , 60 : 349

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.