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Original Articles

Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage

Pages 129-195 | Published online: 24 Oct 2006

References

  • Malherbe , J. B. 1994 . Sputtering of compound semiconductor surfaces. I. Ion-solid interactions and sputter yields . CRC Crit. Rev. Solid State Phys. Mater. Sci. , 19 : 55
  • Hofmann , S. 1983 . Practical Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy , Edited by: Briggs , D. and Seah , M. P. Chichester : John Wiley & Sons . chap 4.
  • Zalar , A. 1985 . Improved depth resolution by sample rotation during Auger electron spectroscopy depth profiling. . Thin Solid Films , 124 : 223
  • Pamler , W. and Wangemann , K. 1992 . Depth profile analysis of aluminum metallization in microelectronics: optimization of depth resolution. . Surf. Interface Anal. , 18 : 52
  • Sobue , S. and Okuyama , F. 1990 . Topographical features of rotated Auger samples sputtered with inert-gas ions . J. Vac. Sci. Technol. , A8 : 785
  • Kojima , I. , Fukumoto , N. and Kurahashi , M. 1990 . STM and AES study of the relation between ion sputter induced roughness and depth resolution . J. Electron. Spectrosc. , 50 : C9
  • Behrisch , R. , ed. 1983 . Sputtering by Particle Bombardment II , Berlin : Springer-Verlag .
  • Behrish , R. and Wittmaack , K. , eds. 1991 . Sputtering by Particle Bombardment III , Berlin : Springer-Verlag .
  • Kiriakidis , G. , Carter , G. and Whitton , J. L. , eds. 1986 . Erosion and Growth of Solids Stimulated by Atom and Ion Beams , Dordrecht : Martinus Nijhoff .
  • Auciello , O. and Kelly , R. , eds. 1984 . Ion Bombardment Modification of Surfaces , Amsterdam : Elsevier .
  • Michely , T. and Comsa , G. 1993 . The scanning tunneling microscope as a means for the investigation of ion bombardment effects on metal surfaces. . Nucl. Instrum. & Methods. , B82 : 207
  • Wilson , I. H. 1993 . Scanning tunnelling microscope studies of sputtering. . Surf. Interface. Anal. , 20 : 637
  • Rossnagel , S. M. 1986 . “ Effects of surface impurities and diffusion on ion bombardment-induced topography formation ” . In Erosion and Growth of Solids Stimulated by Atom and Ion Beams , Edited by: Kiriakidis , G. , Carter , G. and Whitton , J. L. 181 Dordrecht : Martinus Nijhoff .
  • Carter , G. , Navinsek , B. and Whitton , J. L. 1983 . “ Heavy ion sputtering induced surface topography development ” . In Sputtering by Particle Bombardment II , Edited by: Behrish , R. 640 Berlin : Springer-Verlag .
  • Wehner , G. K. 1985 . Cone formation as a result of whisker growth on ion bombarded metal surfaces . J. Vac. Sci. Technol. , A3 : 1821
  • Whitton , J. L. 1986 . “ Experimental studies of morphology development ” . In Erosion and Growth of Solids Stimulated by Atom and Ion Beams , Edited by: Kiriakidis , G. , Carter , G. and Whitton , J. L. 151 Dordrecht : Martinus Nijhoff .
  • Nindi , M. M. , Stulik , D. C. , Millham , C. B. and Larson , T. J. 1989 . Three-dimensional computer simulation of shape and groove formation of a developing cone under energetic Xe atom particle bombardment . Nucl. Instrum. Methods , B44 : 79
  • Rossnagel , S. M. and Robinson , R. S. 1982 . Surface diffusion activation energy determination using ion beams . J. Vac. Sci. Technol. , 20 : 195
  • Oechsner , H. 1975 . Sputtering — a review of some recent experimental and theoretical aspects . Appl. Phys. , 8 : 185
  • Oechsner , H. 1973 . Untersuchungen zur Festkörperzerstäubung bei schiefwinkligem Ionenbeschub polykristalliner Metalloberflächen im Energiebereich um l keV . Z. Phys. , 261 : 37
  • Sigmund , P. 1973 . A mechanism of surface micro-roughening by ion bombardment . J. Mater. Sci. , 8 : 1545
  • Carter , G. 1986 . “ Theory of surface erosion and growth ” . In Erosion and Growth of Solids Stimulated by Atom and Ion Beams , Edited by: Kiriakidis , G. , Carter , G. and Whitton , J. L. 70 Dordrecht : Martinus Nijhoff .
  • Nobes , M. J. 1986 . “ Geometric methods of analysis ” . In Erosion and Growth of Solids Stimulated by Atom and Ion Beams , Edited by: Kiriakidis , G. , Carter , G. and Whitton , J. L. 103 Dordrecht : Martinus Nijhoff .
  • Carter , G. and Nobes , M. J. 1984 . “ The theory of development of surface morphology by sputter erosion processes ” . In Ion Bombardment Modification of Surfaces. , Edited by: Auciello , O. and Kelly , R. 163 Amsterdam : Elsevier .
  • Carter , G. , Nobes , M. J. , Katardjiev , I. V. and Whitton , J. L. 1988 . The role of bombardment induced defects in the initiation of topography on ion bombarded f. c. c. metals. . Defect Diffus. Forum. , 57–58 : 97
  • Gries , W. H. 1989 . Radiation-induced sample modification in surface analysis: InP as an extreme example . Surf. Interface Anal. , 14 : 611
  • Gries , W. H. and Miethe , K. 1987 . Synergetic effects during sputter-assisted depth profiling: growth-dominated topography development on InP and a model of the atomic mechanism . Microchim. Acta. , 1 : 169
  • Hosier , W. and Pamler , W. 1993 . Effects of crystallinity on depth resolution in sputter depth profiles . Surf. Interface Anal. , 20 : 609
  • Pamler , W. , Wangemann , K. , Kampermann , S. and Hosier , W. 1990 . Depth resolution in Auger depth profile analysis of aluminum metallization in microelectronics: the effect of crystalline texture. . Nucl. Instrum. Methods , B51 : 34
  • Bradley , R. M. and Harper , J. M. E. 1988 . Theory of ripple topography induced by ion bombardment . J. Vac. Sci. Technol. , A6 : 2390
  • MacLaren , S. W. , Baker , J. E. , Finnigan , N. L. and Loxton , C. M. 1992 . Surface roughness development during sputtering of GaAs and InP: evidence for the role of surface diffusion in ripple formation and sputter cone development . J. Vac. Sci. Technol. , A10 : 469
  • Miethe , K. , Schwarzbach , D. , Betz , W. , Nickel , H. , Lösch , R. , Schlapp , W. , Stingeder , G. and Grasserbauer , M. 1991 . “ SIMS depth profiling of an Al0. 35Ga0. 65As/GaAs superlattice with O2 + and Cs+ primary ions using different energies and angles of incidence ” . In Proc. SIMS VIII , Edited by: Benninghoven , A. , Janssens , K. T. F. , Tümpner , J. and Werner , H. W. 395 Chichester : John Wiley & Sons .
  • Carter , G. , Katardjiev , I. V. and Nobes , M. J. 1988 . The production of periodic surface features by sputtering and related processes. . Defect Diffus. Forum. , 57–58 : 49
  • Auciello , O. and Kelly , R. 1981 . On the role of the primary beam and of scattered or sputtered particles in the faceting of cones on bombarded surfaces . Nucl. Instrum. Methods. , 182/183 : 267
  • Belson , J. and Wilson , I. H. 1981 . Theory of redeposition of sputtered flux on to surface asperities . Nucl. Instrum. Methods , 182/183 : 275
  • Wilson , I. H. , Belson , J. and Auciello , O. 1984 . “ Secondary effect in ion bombardment-induced erosion ” . In Ion Bombardment Modification of Surfaces. , Edited by: Auciello , O. and Kelly , R. 225 Amsterdam : Elsevier .
  • McDonell , W. R. 1978 . Whisker growth — a new mechanism for helium blistering of surfaces in complex radiation environments . J. Nucl. Mater. , 76/77 : 258
  • Floro , J. A. , Rossnagel , S. M. and Robinson , R. S. 1983 . Ion-bombardment-induced whisker formation on graphite . J. Vac. Sci. Technol. , Al : 1398
  • Poker , D. B. , Schubert , J. , Alexandrou , A. , Froehlingsdorf , J. and Stritzker , B. 1987 . Growth of Sn whiskers after low temperature implantation of 20 keV He or H . Nucl. Instrum. Methods. , B19/20 : 185
  • van Vechten , J. A. , Solberg , W. , Batson , P. E. , Cuomo , J. J. and Rossnagel , S. M. 1987 . Kink site saturation mechanism for whisker growth under sputtering conditions . J. Cryst. Growth , 82 : 289
  • Bauser , E. and Strunk , H. 1982 . Dislocations as growth step sources in solution growth and their influence on interface structures . Thin Solid Films , 93 : 185
  • Malherbe , J. B. , Lakner , H. and Gries , W. H. 1991 . Composition and structure of ion-bombardment-induced growth cones on InP . Surf. Interface Anal. , 17 : 719
  • Gries , W. H. 1991 . “ Recrystallization-affected topography on semiconductors at SIMS conditions ” . In Proc. SIMS VIII , Edited by: Benninghoven , A. , Janssen , K. T. F. , Tümpner , J. and Werner , H. W. 323 Chichester : John Wiley & Sons .
  • Gries , W. H. 1991 . “ On the Origin of Topography Developing on keV Ion-Irradiated InP and GaAs ” . In Poster EMJ-ThP19 , Seattle : 38th Natl. Symp. American Vacuum Society . unpublished.
  • Gries , W. H. 1993 . On the surface-analytical implications of commonly used simplifying assumptions about (wafer) surfaces . S. Afr. J. Phys. , 16 : 95
  • Wilson , I. H. 1973 . The topography of sputtered semiconductors . Radiat. Eff. , 18 : 95
  • Wada , O. 1984 . Ion-beam etching of InP and its application to the fabrication of high radiance InGaAsP/InP light emitting diodes . J. Electrochem. Soc. , 131 : 2373
  • DeMeo , N. L. , Donnelly , J. P. , O'Donnell , F. J. , Geis , M. W. and O'Connor , K. J. 1985 . Low power ion-beam-assisted etching of indium phosphide. . Nucl. Instrum. Methods , B7/8 : 814
  • Linders , J. , Niedrig , H. , Sebald , T. and Sternberg , M. 1986 . The sputtering of InP with 3 keV Ar- and O2-ions under various angles . Nucl. Instrum. Methods , B13 : 374
  • Bouadma , N. , Devoldere , P. , Jusserand , B. and Ossart , P. 1986 . Ion beam etching and surface characterization of indium phosphide . Appl. Phys. Lett. , 48 : 1285
  • Dowsett , M. G. , King , R. M. and Parker , E. H. C. 1977 . SIMS evaluation of contamination on ion-cleaned (100) InP substrates . Appl. Phys. Lett. , 31 : 529
  • Farrow , R. F. C. 1981 . The use of ion beams in molecular beam epitaxy . Thin Solid Films , 80 : 197
  • Oliver , J. , Faulconnier , P. and Poirier , R. 1980 . Electron-stimulated oxidation on InP (100) surfaces studied by Auger electron spectroscopy and by low-energy-loss spectroscopy . J. Appl. Phys. , 51 : 4990
  • Oliver , J. 1980 . Low-energy electron losses by plasmon excitations as control means of the growth of epitaxial layers . J. Appl. Phys. , 51 : 5406
  • Kirk , D. L. and Jones , C. 1979 . The influence of chemical treatment upon the composition and nature of (100) surfaces of indium phosphide . J. Phys. D , 12 : 651
  • Skinner , D. K. 1980 . New method of preparing (100) InP surfaces for Schottky barrier and ohmic contact formation . J. Electron. Mater. , 9 : 67
  • Skinner , D. K. , Swanson , J. G. and Haynes , C. V. 1983 . Ion beam induced composition changes during Auger sputter profiling of thin M films on InP . Surf. Interface Anal. , 5 : 38
  • Liau , Z. L. and Zeiger , H. J. 1990 . Surface-energy-induced mass-transport phenomenon in annealing of etched compound semiconductor structures: theoretical modeling and experimental confirmation . J. Appl. Phys. , 67 : 2434
  • Peacock , D. C. 1983 . An AES, SAM and RHEED study of InP (110) subjected to ion bombardment and annealing treatments. . Vacuum , 33 : 601
  • Hou , X.-Y. , Yu , M.-R. and Wang , X. 1985 . The variation of In islands on InP surface versus ion sputtering angle observed by electron energy loss spectroscopy . Chin. Phys. Lett. , 2 : 31
  • Jardin , C. , Robert , D. , Achard , B. , Gruzza , B. and Pariset , C. 1987 . An AES and ELS study of InP (100) surface subjected to argon ion bombardment. . Surf. Interface Anal. , 10 : 301
  • Reichler , T. , Cerva , R. H. , Hosier , W. and Criegern , R. V. 1990 . “ Primary beam damage at the bottom of SIMS craters in GaAs, InP and Si: a TEM and AES study ” . In Proceedings SIMS 7 , Edited by: Benninghoven , A. , Evans , C. A. , McKeegan , K. D. , Storms , H. A. and Werner , H. W. 259 John Wiley & Sons .
  • Malherbe , J. B. and van der Berg , N. G. Argon bombardment-induced topography development on InP . Surf. Interface Anal. , in press.
  • Wada , O. 1984 . Ar ion-beam etching characteristics and damage production in InP . J. Phys. D , 17 : 2429
  • Nagata , F. , Shimotsu , T. and Kakibayashi , H. 1985 . Cross-sectional observation with transmission electron microscope . JEOL News , 22 : 14
  • Duncan , S. , Smith , R. , Sykes , D. E. and Walls , J. M. 1984 . Surface morphology of Si (100), GaAs (100) and InP (100) following OJ and Cs+ ion bombardment. . Vacuum , 34 : 145
  • Miethe , K. and Kuphal , E. 1993 . Sudden surface roughening followed by levelling observed in SIMS analysis of InP-containing III-V multilayers. . Surf. Interface Anal. , 20 : 742
  • Chew , N. G. and Cullis , A. G. 1984 . Iodine ion milling of indium-containing compound semiconductors . Appl. Phys. Lett. , 44 : 142
  • Mutoh , K. , Nakajima , M. and Minara , M. 1990 . Reactive ion-beam etching of InP with Cl2 . Jpn. J. Appl. Phys. , 29 : 1022
  • Takimoto , K. , Ohnaka , K. and Shibata , J. 1989 . Reactive ion etching of InP with Br2-containing gases to produce smooth, vertical walls: fabrication of etched-faceted lasers . Appl. Phys. Lett. , 54 : 1947
  • Tadokoro , T. , Koyama , F. and Iga , K. 1988 . A study on etching parameters of a reactive ion beam etch for GaAs and InP . Jpn. J. Appl. Phys. , 27 : 389
  • Donnelly , V. M. , Flamm , D. L. , Tu , C. W. and Ibbotson , D. E. 1982 . Temperature dependence of InP and GaAs etching in a chlorine plasma . J. Electrochem. Soc. , 129 : 2533
  • Homma , Y. , Okamoto , H. and Ishii , Y. 1985 . Surface microtopography and compositional change of ce-sium-ion-bombarded semiconductor surfaces . Jpn. J. Appl. Phys. , 24 : 934
  • Farrow , R. F. C. , Cullis , A. G. , Grant , A. J. and Pattison , J. F. 1978 . Structural and electrical properties of epitaxial metal films grown on argon ion bombarded and annealed (001) InP . J. Cryst. Growth , 45 : 292
  • Cullis , A. G. and Farrow , R. F. C. 1979 . A study of the structure and properties of epitaxial silver deposited by atomic beam techniques on (001) InP . Thin Solid Films , 58 : 197
  • Barna , A. and Pécz , B. 1991 . Simple method for the preparation of InP based samples for TEM investigation . J. Electron Microsc. Technol. , 18 : 325
  • Farrow , R. F. C. 1974 . The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditions . J. Phys. D , 7 : 2436
  • Massies , J. and Lemaire-Dezaly , F. 1984 . Correlation of the fine structure of In4. 5M4. 5N4. 5 Auger spectrum and thermal degradation at InP surfaces . J. Appl. Phys. , 55 : 3136
  • Massies , J. and Lemaire-Dezaly , F. 1985 . Auger electron spectroscopy and electron loss spectroscopy comparative study of vacuum annealing effects on InP surface . J. Appl. Phys. , 57 : 237
  • Wilson , I. H. , Belson , J. and Auciello , O. 1984 . “ Secondary effects in ion bombardment induced surface erosion ” . In Ion Bombardment Modification of Surfaces. , Edited by: Auciello , O. and Kelly , R. 225 Amsterdam : Elsevier .
  • Hoinkis , O. , Miethe , K. , Betz , W. and Gries , W. H. 1991 . Application of infrared luminescence microscopy for ion beam diagnostics and for measurement of ion dose densities from 109 to 1016 cm−3 . Fresenius J. Anal. Chem. , 341 : 101
  • Bhattacharya , S. R. , Chose , D. , Basu , D. and Karmohapatro , S. B. 1987 . Surface topography of Ar+ bombarded GaAs (100) at various temperatures . J. Vac. Sci. Technol. , A5 : 179
  • Bhattacharya , S. R. , Ghose , D. and Basu , D. 1987 . Energy dependence of the sputtering yield of gallium arsenide by argon ion bombardment . Indian J. Pure Appl. Phys. , 25 : 328
  • Bhattacharya , S. R. , Ghose , D. and Basu , D. 1990 . Mass and energy dependence of the sputtering yield of gallium arsenide . Nucl. Iustrum. Methods. , B47 : 253
  • Greene , J. E. , Natarajan , B. R. and Sequeda-Osorio , F. 1978 . Sputtering of metal alloys containing second-phase precipitates . J. Appl. Phys. , 49 : 417
  • Walkow , B. , Loeb , H. W. , Freisinger , J. and Mößner , C. 1991 . Studies of GaAs surface roughness and organic masks resistance depending on the ion-beam energy . Fresenius J. Anal. Chem. , 341 : 248
  • Zekorn , S. , Fries , Th. , Becker , C. and Wandelt , K. 1992 . Topography of sputtered semiconductor surfaces by STM in Air . Phys. Status Solidi A , 131 : 99
  • Okuyama , F. and Fuji moto , Y. 1989 . Evidence for atomic recondensation on ion-bombarded solid surfaces. . Surf. Sci. , 210 : L223
  • Gries , W. H. and Lakner , H. 1993 . private communication
  • Gericke , M. , Lill , T. , Trapp , M. , Richter , C.-E. and Hupfer , A. 1991 . Surface roughening during depth profiling by secondary ion mass spectrometry (SIMS) in GaAIAs and GaAs . Fresenius J. Anal. Chem. , 341 : 31
  • Stevie , F. A. , Kahora , P. M. , Simons , D. S. and Chi , P. 1988 . Secondary ion yield changes in Si and GaAs due to topography changes during O2 + or Cs+ ion bombardment . J. Vac. Sci. Technol. , A6 : 76
  • Friedbacher , G. , Schwarzbach , D. , Hansma , P. K. , Nickel , H. , Grasserbauer , M. and Stingeder , G. 1993 . A combination of atomic force microscopy and secondary ion mass spectrometry for investigation of AlxGa1−xAs/GaAs super lattices . Fresenius J. Anal. Chem. , 345 : 615
  • Karen , A. , Okuno , K. , Soeda , F. and Ishitani , A. 1991 . A study of the secondary-ion yield change on the GaAs surface caused by the O2 + ion-beam-induced rippling . J. Vac. Sci. Technol , A9 : 2247
  • Duncan , S. , Smith , R. , Sykes , D. E. and Walls , J. M. 1983 . Summary abstract: surface topography of electronic materials following oxygen and cesium ion bombardment . J. Vac. Sci. Technol. , Al : 621
  • Schimmel , Th. , Fuchs , H. , Graf , K. , Sander , R. and Lux-steiner , M. 1992 . Annealing behaviour of ion-bombarded WSe2 . Phys. Status Solidi A , 131 : 89
  • Schimmel , Th. , Fuchs , H. , Sander , R. and Lux-Steiner , M. 1992 . Atomically resolved STM imaging of ion-bombarded WSe2 . Ultramicroscopy , 42–44 : 683
  • Schimmel , Th. , Fuchs , H. and Lux-Steiner , M. 1992 . Generation and manipulation of atomic-scale structures with the STM . Phys. Status Solidi A , 131 : 47
  • Hou , X. , Yu , M. and Wang , X. 1987 . Experimental evidence for indium island formation on clean InAs (111) and InSb (111) surfaces . Chin. Phys. , 1 : 854
  • Carr , B. A. , Friedland , E. and Malherbe , J. B. 1987 . Effect of Ar+ ion bombardment on the electrical characteristics of Al/n-Si contacts . J. Appl. Phys. , 61 : 2566
  • Carr , B. A. , Friedland , E. and Malherbe , J. B. 1988 . Effect of annealing on the Schottky barrier height of Al/n-Si Schottky contacts after Ar+ ion bombardment . J. Appl. Phys. , 64 : 4775
  • Malherbe , J. B. , Friedland , E. , My burg , G. , Carr , B. A. , Bredell , L. J. and Pavlovska , A. 1988 . Modification of metal Schottky contacts on silicon by ion implantation. . Nucl. Instrum. Methods. , B35 : 247
  • Malherbe , J. B. , Weimer , K. P. , Friedland , E. and Bredell , L. J. 1993 . The effect of silicon ion beam mixing on the barrier height of Sb/n-Si Schottky contacts . Appl. Surf. Sci. , 70/71 : 442
  • Vaseashta , A. , Elshabini-Riad , A. and Burton , L. C. 1991 . Effects of low energy Ar+ ion bombardment on GaAs . Mater. Sci. Eng. , B9 : 489
  • Wendler , E. , Wesch , W. and Götz , G. 1991 . Defect production in ion implanted GaAs, GaP and InP . Nucl. Instrum. Methods , B55 : 789
  • Wang , Y. G. and Ashok , S. 1989 . Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation. . Nucl. Instrum. Methods , B39 : 461
  • Shwe , C. and Gal , M. 1993 . Measurement of damage profile in semiconductors: a sensitive optical technique . Appl. Phys. Lett. , 62 : 516
  • Pribat , D. , Dieumegard , D. , Croset , M. , Cohen , C. , Nipoti , R. , Siejka , J. , Bentini , G. G. , Correra , L. and Servidori , M. 1983 . Ion implantation of silicon in gallium arsenide: damage and annealing characterizations. . Nucl. Instrum. Methods , 209/210 : 737
  • Malherbe , J. B. , Weimer , K. P. , Bredell , L. J. , Friedland , E. and Myburg , G. 1990 . Ion beam mixing of Sb Schottky contacts on n-Si . Mater. Res. Soc. Symp. Proc. , 157 : 221
  • Myburg , G. , Malherbe , J. B. and Friedland , E. 1988 . Ion bombardment of nickel contacts on silicon. . Nucl. Instrum. Methods , B35 : 457
  • Auret , F. D. , Malherbe , J. B. , Nel , M. and Myburg , G. 1988 . A DLTS study of defects formed in silicon during ion beam mixing. . Nucl. Instrum. Methods , B35 : 234
  • Malherbe , J. B. , de Witt , B. and Berning , G. L. P. 1992 . The effect of Ar+ ion implantation on the electrical characteristics of Cr/p-Si Schottky diodes . J. Appl. Phys. , 71 : 2757
  • Pearton , S. J. 1988 . Ion implantation in GaAs . Solid State Phenom. , 182 : 247
  • Pearton , S. J. 1990 . Ion implantation for isolation of III-V semiconductors . Mater. Sci. Rep. , 4 : 313
  • Pearton , S. J. , Chakrabarti , U. K. , Perley , A. P. and Jones , K. S. 1990 . Ion milling damage in InP and GaAs . J. Appl. Phys. , 68 : 2760
  • Wendler , E. , Wesch , W. and Götz , G. 1992 . Investigation of the amorphization process in ion implanted AIIIBV compounds. . Nucl. Instrum. Methods , B63 : 47
  • Sadana , D. K. 1985 . Mechanisms of amorphization and recrystallization in ion implanted III-V compound semiconductors . Nucl. Instrum. Methods , B7/8 : 375
  • Gill , S. S. 1988 . Rapid isothermal annealing of ion implanted gallium-arsenide. . Solid State Phenom. , 182 : 281
  • Narayan , J. and Holland , O. W. 1984 . Characteristics of ion-implantation damage and annealing phenomena in semiconductors . J. Electrochem. Soc. , 131 : 2651
  • Morgan , D. V. and Eisen , F. H. 1985 . “ Ion implantation and damage in GaAs ” . In Gallium Arsenide , Edited by: Howes , M. J. and Morgan , D. V. 161 New York : John Wiley & Sons .
  • Ryssel , H. and Rüge , L. 1986 . Ion implantation , 16ff 229ff Chichester : John Wiley & Sons .
  • Poate , J. M. and Williams , J. S. 1984 . “ Amorphization and crystallization of semiconductors ” . In Ion Implantation and Beam Processing , Edited by: Williams , J. S. and Poate , J. M. 14 Sydney : Academic Press .
  • Feng , G. F. , Zallen , R. , Epp , J. M. and Dillard , J. G. 1991 . Raman-scattering and optical studies of argon-etched GaAs surfaces . Phys. Rev. B , 43 : 9678
  • Rubart , W. S. , Jones , K. S. , Seiberling , L. and Sandana , D. K. 1990 . Low-energy implantation of Si and Sn into GaAs . Mater. Res. Soc. Symp. Proc. , 157 : 677
  • Pang , S. W. , Geis , M. W. , Efremow , N. N. and Lincoln , G. A. 1985 . Effects of ion species and adsorbed gas on dry etching induced damage in GaAs . J. Vac. Sci. Technol. , B3 : 398
  • Pang , S. W. , Goodhue , W. D. , Lyszczarz , T. M. , Ehrlich , D. J. , Goodman , R. B. and Johnson , G. D. 1988 . Dry etching induced damage on vertical sidewalls of GaAs channels . J. Vac. Sci. Technol. , B6 : 1916
  • Kawabe , M. , Kanzaki , N. , Masuda , K. and N'amba , S. 1978 . Effects of ion etching on the properties of GaAs . Appl. Opt. , 17 : 2556
  • Bert , N. A. , Pogrebitskii , Yu. K. , Soshnikov , I. P. and Yur'ev , Yu. N. 1992 . Sputtering of GaAs (001) by Ar ions with energies of 1–9 keV . Sov. Phys. Tech. Phys. , 37 : 449
  • Konomi , I. , Kawano , A. and Kido , Y. 1989 . Damage profiling of Ar+-irradiated Si(100) and GaAs (100) by medium energy ion scattering. . Surf. Sci. , 207 : 427
  • Sekino , Y. , Owari , M. , Kudo , M. and Nihei , Y. 1986 . Estimation of low-energy ion bombardment damage on GaAs (001) surface by X-ray photoelectron diffraction . Jpn. J. Appl. Phys. , 25 : 538
  • Owari , M. , Kudo , M. , Nihei , Y. and Kamada , H. 1980 . Estimation of surface crystal regularity by utilizing X-ray photoelectron diffraction (XPED) effects . Jpn. J. Appl. Phys. , 19 : 1203
  • Jindal , S. K. , Lin , S. S. , Brown , L. D. , Marcus , H. L. and Schmerling , M. A. 1988 . A study of low energy Ar+ ion bombardment induced lattice damage in (100) n-GaAs by channeling. . Scan. Microsc. , 2 : 1879
  • Kang , H. J. , Moon , Y. M. , Kang , T. W. , Leem , J. Y. , Lee , J. J. and Ma , D. S. 1989 . Surface composition and structure changes in GaAs compounds due to low-energy Ar+ ion bombardment . J. Vac. Sci. Technol. , A7 : 3251
  • Alberts , H. W. , Gaigher , H. L. and Friedland , E. 1991 . Pulsed-electron-beam annealing of ion implanted GaAs . Mater. Sci. Eng. , B9 : 331
  • Alberts , H. W. , Gaigher , H. L. and Bredell , L. J. 1993 . Channeling and TEM investigations of pulse electron beam annealed GaAs implanted with Pb . Nucl. Instrum. Methods , B80/81 : 519
  • Gaigher , H. L. and Alberts , H. W. 1993 . TEM study of ion implanted GaAs after pulsed electron beam annealing . Radiat. Eff. , 125 : 373
  • Vieu , C. , Schneider , M. , Launois , H. and Descouts , B. 1992 . Damage generation and annealing in Ga+ implanted GaAs/(Ga, Al)As quantum wells . J. Appl. Phys. , 71 : 4833
  • Williams , J. S. , Jagadish , C. , Clark , A. , Li , G. and Larsen , C. A. 1993 . Damage accumulation and amorphization in GaAs-AlGaAs structures. . Nucl. Instrum. Methods , B74 : 80
  • Desnica , U. V. , Wagner , J. , Haynes , T. E. and Holland , O. W. 1992 . Raman and ion channeling analysis of damage in ion-implanted GaAs: dependence on ion dose and dose rate . J. Appl. Phys. , 71 : 2591
  • Kido , Y. and Kawamoto , J. 1985 . Projected range and damage distributions in ion-implanted M, Si, Al2O3, and GaAs . J. Appl. Phys. , 58 : 3377
  • Heyd , A. R. , An , I. , Collins , R. W. , Cong , Y. , Vedam , K. , Bose , S. S. and Miller , D. L. 1991 . Ion beam etching of GaAs/AlGaAs heterostructures probed in real time by spectroscopic ellipsometry . J. Vac. Sci. Technol. , A9 : 810
  • Oetzmann , H. , Feuerstein , A. , Grahmann , H. and Kalbitzer , S. 1975 . Range parameters of heavy ions in amorphous targets at LSS-energies of 0.0006 ≤ ε ≤ 0.3 . Phys. Lett. A , 55 : 170
  • Kalbitzer , S. and Oetzmann , H. 1980 . Ranges and range theories. . Radiat. Eff. , 47 : 57
  • Schiott , H. E. 1970 . Approximations and interpolation rules for ranges and range stragglings. . Radiat. Eff. , 6 : 17
  • Tognetti , N. P. , Elliman , R. G. and Carter , G. 1983 . Disorder saturation in heavy ion implanted semiconductors . Vacuum. , 33 : 165
  • Winterbon , K. B. 1975 . Ion Implantation Range and Energy Deposition Distributions , Vol. 2 , New York : Plenum Press .
  • Kieslich , A. , Straka , J. and Forchel , A. 1992 . Investigation of random and channeling Ar+ implantation-induced damage in Af(In)GaAs/GaAs quantum wells . Jpn. J. Appl. Phys. , 31 : 4428
  • Larelle , F. , Bagchi , A. , Tsuchiya , M. , Merz , J. and Petroff , P. M. 1990 . Focused ion beam channeling effects and ultimate sizes of GaAMs/GaAs nanostructures. . Appl. Phys. Lett. , 56 : 1561
  • Pearton , S. J. , Poate , J. M. , Sette , F. , Gibson , J. M. , Jacobson , D. C. and Williams , J. S. 1987 . Ion implantation in GaAs . Nucl. Instrum. Methods. , B19/20 : 369
  • Immorlica , A. A. and Eisen , F. H. 1976 . Capless annealing of ion-implanted GaAs . Appl. Phys. Lett. , 29 : 94
  • Hara , T. , Suzuki , H. , Suga , A. , Terada , T. and Toyoda , N. 1987 . Radiation damage of gallium arsenide induced by reactive ion etching . J. Appl. Phys. , 62 : 4109
  • Kanber , H. , Feng , M. and Whelan , J. M. 1984 . Characterization of ion implantation damage in capless annealed GaAs . Mater. Res. Soc. Symp. Proc. , 27 : 365
  • Wesch , W. 1992 . Ion implantation in III-V compounds . Nucl. Instrum. Methods , B68 : 342
  • Pearton , S. J. 1991 . Ion implantation doping and isolation of III-V semiconductors. . Nucl. Instrum. Methods , B59/60 : 970
  • Wendler , E. and Wesch , W. 1993 . Defect nucleation in weakly damaged ion implanted GaAs . Nucl. Instrum. Methods , B73 : 489
  • Kozanecki , A. , Sealy , B. J. , Gwilliam , R. and Kidd , P. 1993 . X-ray and channeling analysis of ion implanted gallium arsenide. . Nucl. Instrum. Methods , B80/81 : 798
  • Cries , W. H. 1993 . private communication
  • Johnson , S. T. , Elliman , R. G. and Williams , J. S. 1989 . Ion beam induced epitaxy of (100) and (111) GaAs . Nucl. Instrum. Methods. , B39 : 449
  • Komarov , F. F. 1991 . Self-annealing in ion-implanted Si and GaAs . Vacuum , 42 : 101
  • Jones , K. S. and Santana , C. J. 1991 . Amorphization of elemental and compound semiconductors upon ion implantation . J. Mater. Res. , 6 : 1048
  • Poate , J. M. and Williams , J. S. 1984 . “ Amorphization and crystallization of semiconductors ” . In Ion Implantation and Beam Processing , Edited by: Williams , J. S. and Poate , J. M. 13 Sydney : Academic Press .
  • Hayes , T. R. 1991 . “ Dry etching of In-based semiconductors ” . In Indium Phosphate and Related Materials: Processing Technology and Devices , Edited by: Katz , A. 277 Boston : Artech House .
  • Callee , R. , Poudoulec , A. , Salvi , M. , L'Haridon , H. , Favennec , P. N. and Gauneau , M. 1993 . Ion implantation damage and annealing in GaSb . Nucl. Instrum. Methods , B80/81 : 532
  • Callee , R. and Poudoulec , A. 1993 . Characteristics of implantation-induced damage in GaSb . J. Appl. Phys. , 73 : 4831
  • Gauneau , M. , Chaplain , R. , Rupert , A. , Toudic , Y. , Riviere , D. and Callee , R. 1993 . Swelling of GaSb at low energies . Nucl. Instrum. Methods , B80/81 : 543
  • Gauneau , M. , Chaplain , R. , Rupert , A. , Toudic , Y. , Callee , R. and André , E. 1993 . Secondary ion mass spectrometry generates swelling of GaSb: depth resolution and secondary ion yields . J. Appl. Phys. , 73 : 2051
  • McHargue , C. J. and Williams , J. M. 1993 . Ion implantation effects in silicon carbide. . Nucl. Instrum. Methods , B80/81 : 889
  • Ruttensperger , B. , Krötz , G. , Müller , G. , Derst , G. and Kalbitzer , S. 1991 . Crystalline-amorphous contrast formation in thermally crystallized Sci . J. Non-Cryst. Solids , 137/138 : 635
  • Fohl , A. , Emrick , R. M. and Carstanjen , H. D. 1992 . A Rutherford backscattering study of Ar- and Xe-im-planted silicon carbide. . Nucl. Instrum. Methods. , B65 : 335
  • Bentley , J. , Romana , L. J. , Horton , L. L. and McHargue , C. J. 1992 . Distribution and characterization of iron in implanted silicon carbide. . Mater. Res. Soc. Symp. Proc. , 235 : 363
  • Horton , L. L. , Bentley , J. , Romana , L. , Perez , A. , McHargue , C. J. and McCallum , J. C. 1992 . Microstructural characterization of iron ion implantation of silicon carbide. . Nucl. Instrum. Methods , B65 : 345
  • McHargue , C. J. and Williams , J. M. 1982 . “ Structure and properties of silicon carbide implanted with chromium ” . In Metastable Materials Formation by Iron Implantation , Edited by: Picraux , S. T. and Choyke , W. J. 303 Amsterdam : Elsevier .
  • McHargue , C. J. , White , C. W. , Appleton , B. R. , Farlow , G. C. and Williams , J. M. 1984 . Ion beam modification of ceramics . Mater. Res. Soc. Symp. Proc. , 27 : 385
  • McHargue , C. J. , Farlow , G. C. , White , C. W. , Williams , J. M. , Appleton , B. R. and Naramoto , H. 1985 . The amorphization of ceramics by ion beams . Mater. Sci. Eng. , 69 : 123
  • McHargue , C. J. , Lewis , M. B. , Williams , J. M. and Appleton , B. R. 1985 . The reactivity of ion-implanted SiC . Mater. Sci. Eng. , 69 : 391
  • McHargue , C. J. , Farlow , G. C. , Begun , G. M. , Williams , J. M. , White , C. W. , Appleton , B. R. , Sklad , P. S. and Angelini , P. 1986 . Damage accumulation in ceramics during ion implantation . Nucl. Instrum. Methods , B16 : 212
  • Nakata , T. , Mizutani , Y. , Mikoda , M. , Watanabe , M. , Takagi , T. and Nishino , S. 1993 . Evaluation of Al ion implanted 6H-SIC single crystals . Nucl. Instrum. Methods. , B74 : 131
  • Spitznagel , J. A. , Wood , S. , Choyke , W. J. , Doyle , N. J. , Bradshaw , J. and Fishman , S. G. 1986 . Ion beam modification of 6H/15R SiC crystals . Nucl. Instrum. Methods , B16 : 237
  • Tulinow , A. F. , Chechenin , N. G. , Bourdelle , K. K. , Makarov , V. N. and Suvorov , A. V. 1988 . SiC amorphization as a result of Ga+ implantation. . Nucl. Instrum. Methods , B33 : 788
  • Williams , J. M. , McHargue , C. J. and Appleton , B. R. 1983 . Structural alterations in SiC as a result of Cr+ and N+ implantation. . Nucl. Instrum. Methods , 209/210 : 317
  • Bonn , H. G. , Williams , J. M. , McHargue , C. J. and Begun , G. M. 1987 . Recrystallization of ion-implanted α-SiC . J. Mater. Res. , 2 : 107
  • Chechenin , N. G. , Bourdelle , K. K. and Suvorov , A. V. 1990 . A channeling study of ion-produced disorder in silicon carbide. . Nucl. Instrum. Methods , B48 : 235
  • Chechenin , N. G. , Bourdelle , K. K. , Suvorov , A. V. and Kastilio-Vitloch , A. X. 1992 . Damage and aluminum distributions in SiC during ion implantation and annealing. . Nucl. Instrum. Methods , B65 : 341
  • Pezoldt , J. , Kalnin , A. A. , Moskwina , D. R. and Savelyev , W. D. 1993 . Polytype transitions in ion implanted silicon carbide. . Nucl. Instrum. Methods , B80/81 : 943
  • Pezoldt , J. , Kalnin , A. A. and Savelyev , W. D. 1992 . Application of nonequilibrium phase transition to heteropolytype structure creation . Nucl. Instrum. Methods. , B65 : 361
  • Du , H. , Libera , M. , Yang , Z. , Lai , P. , Jacobson , D. C. , Wang , Y. C. and Davis , G. D. 1993 . Effect of self-implantation on structure and oxidation behavior of single crystal β-SiC . Appl. Phys. Lett. , 62 : 423
  • Itoh , A. , Hioki , T. and Kawamoto , J. 1989 . Tribological properties of ion implanted SiC ceramics . Nucl. Instrum. Methods , B37/38 : 692
  • Sigmon , T. W. 1985 . Ion implantation in II-VI compound semiconductors . Nucl. Instrum. Methods , B7/8 : 402
  • Kerkow , H. , Quang , V. X. and Selle , B. 1992 . Post-range implantation damage in II-VI compounds due to electronically stimulated diffusion . J. Cryst. Growth , 117 : 677
  • Friedland , E. 1994 . Annealing of radiation damage in MgO single crystal after krypton implantation . Nucl. Instrum. Methods , B85 : 316
  • Bowman , R. C. Jr. , Alt , R. L. , Adams , P. M. , Knudsen , J. F. , Jamieson , D. N. and Downing , R. G. 1988 . Optical and structural characterization of heavily boron-implanted CdTe . J. Cryst. Growth. , 86 : 768
  • Leo , G. and Ruault , M.-O. 1993 . In situ transmission electron microscopy study of dislocation loops induced by P implantation in CdTe single crystals . J. Appl. Phys. , 73 : 2234
  • Wilson , R. G. 1988 . Ion implantation and SIMS profiling of impurities in II-VI materials (HgCdTe and CdTe) . J. Cryst. Growth , 86 : 735
  • Leo , G. , Drigo , A. V. and Traverse , A. 1993 . Specific behaviour of CdTe ion implantation damage . Mater. Sci. Eng. , B/6 : 123
  • Leo , G. , Traverse , A. , Ruault , M. O. and Drigo , A. V. 1992 . Ion channeling study of P implantation damage in CdTe . Nucl. Instrum. & Methods , B63 : 41
  • Traverse , A. , Leo , G. , Alves , J. G. , Almeida , P. M. , Da Silva , M. F. and Soares , J. C. 1993 . Disorder creation and annealing in Hg implanted CdTe . Nucl. Instrum. Methods. , B80/81 : 938
  • Villegas , I. and Stickney , J. L. 1991 . Formation of ordered, nonreconstructed CdTe (111) surfaces electro-chemically . J. Electrochem. Soc. , 138 : 1310
  • Lu , Y.-C. , Feigelson , R. S. and Route , R. K. 1990 . A study of polar CdTe (111) surfaces using angle-resolved X-ray photoelectron and Auger electron spec-troscopy and low-energy electron diffraction . J. Appl. Phys. , 67 : 2583
  • Chu , M. , Bube , R. H. and Gibbons , J. F. 1980 . Electronic properties of As- and P-implanted cadmium telluride . J. Electrochem. Soc. , 127 : 483
  • Ueng , H. Y. and Hwang , H. L. 1988 . Defects and doping effects in CdTe and CuInS2 by phosphorus ion implantation and pulsed electron beam annealing . Solid State Phenom. , 1/2 : 343
  • Bubulac , L. O. 1988 . Defects, diffusion and activation in ion implanted HgCdTe . J. Cryst. Growth. , 86 : 723
  • Destéfanis , G. L. 1988 . Electrical doping of HgCdTe by ion implantation and heat treatment . J. Cryst. Growth , 86 : 700
  • Destéfanis , G. L. 1983 . Ion implantation in Hg1−xCdxTe . Nucl. Instrum. Methods , 209/210 : 567
  • Bahir , G. and Finkman , E. 1989 . Ion beam milling effect on electrical properties of Hg1−xCdxTe . J. Vac: Sci. Technol. , A7 : 348
  • Bubulac , L. O. , Tennant , W. E. , Riedel , R. A. and Magee , T. J. 1982 . Behavior of implantation-induced defects in HgCdTe. . J. Vac. Sci. Technol. , 21 : 251
  • Carey , G. P. , Cole , S. , Yamashita , T. , Silberman , J. A. , Spicer , W. E. and Wilson , J. A. 1985 . TEM investigation of the differences in ion milling induced damage of Hg1−xCdxTe and CdTe heterojunctions . J. Vac. Sci. Technol. , A3 : 255
  • Schaake , H. F. 1986 . Ion implantation damage in Hg0. 8Cd0. 2Te . J. Vac. Sci. Technol. , A4 : 2174
  • Bahir , G. and Kalish , R. 1983 . Structure of ion-implanted and annealed Hg1−xCdxTe . J. Appl. Phys. , 54 : 3129
  • Bahir , G. , Bernstein , T. and Kalish , R. 1980 . Damage and lattice location studies in Hg implanted Hg1−xCdxTe . Radiat. Eff. , 48 : 247
  • Uzan-Saguy , C. , Richter , V. , Shaanan , M. , Kalish , R. and Tribolet , R. 1992 . Comparison of ion-implantat ion-induced damage in narrow-gap (0. 1 eV) HgxCd1−xTe and HgxZn1−xTe . J. Vac. Sci. Technol. , A10 : 3246
  • Baars , J. , Hurrle , A. , Rothemund , W. , Fritzsche , C. R. and Jakobus , T. 1982 . Boron ion implantation in Hg1−xCdxTe . J. Appl. Phys. , 53 : 1461
  • Ivanov-Omskii , V. I. , Mironov , K. E. and Mynbaev , K. D. 1993 . HgCdTe doping by ion-beam treatment . Semicond. Sci. Technol. , 8 : 634
  • Bubulac , L. O. , Lo , D. S. , Tennant , W. E. , Edwall , D. D. and Robinson , J. C. 1986 . Boron and indium ion-implanted junctions in HgCdTe grown on CdTe and CdTe/Al2O3 . J. Vac. Sci. Technol. , A4 : 2169
  • Destéfanis , G. L. 1985 . Indium ion implantation in Hg0. 78Cd0. 22Te/CdTe. . J. Vac: Sci. Technol. , A3 : 171
  • Friedland , E. , le Roux , G. and Malherbe , J. B. 1986 . Deep radiation damage in copper after ion implantation. . Radiat. Eff. Lett. , 87 : 281
  • Friedland , E. , Malherbe , J. B. , Alberts , H. W. , Vorster , R. E. and Prins , J. F. 1986 . Damage profiles in copper single crystals after ion implantation . S. Aff. J. Phys. , 9 : 135
  • Friedland , E. , Alberts , H. W. and Fletcher , M. 1990 . Temperature dependence of damage ranges in some metals after argon implantation. . Nucl. Instrum. Methods , B45 : 492
  • Friedland , E. and Alberts , H. W. 1988 . Radiation damage in nickel and iron after ion implantation. . Nucl. Instnim. Methods , B35 : 244
  • Friedland , E. and Fletcher , M. 1992 . Structure dependence of radiation damage depths after ion implantation. . Nucl, Iustrum. Methods , B64 : 242
  • Elkind , J. L. 1992 . Ion mill damage in n-HgCdTe . J. Vac. Sci. Technol. , B10 : 1460
  • Blanchard , C. , Barbot , J. F. , Cahoreau , M. , Desoyer , J. C. , le Seoul , D. and Dessus , J. L. 1990 . Study of Al ion implantation in Hg0. 3Cd0. 7Te . Nucl. Instnim. Methods , B47 : 15
  • Uzan , C. , Marfaing , Y. , Legros , R. , Kalish , R. and Richter , V. 1988 . Damage study and physical properties of ion implanted Cd0. 7Hg0. 3Te processed by furnace and rapid thermal annealing . J. Cryst. Growth , 86 : 744
  • Dimiduk , K. C. , Opyd , W. G. , Gibbons , J. F. , Sigmon , T. W. , Magee , T. J. and Ormond , R. D. 1983 . Annealing of Hg1−xCdxTe: Hg loss rates and annealing of ion implantation damage . J. Vac. Sci. Technol. , A1 : 1661
  • Gerasimenko , N. N. , Nesterov , A. A. and Vasil'ev , V. V. 1993 . Ion implantation and rapid thermal annealing of Au-Cd. HgL. Te structures . Nucl. Instrum. Methods. , B80/81 : 919
  • Uzan , C. , Legros , R. and Marfaing , Y. 1985 . A comparative study of laser and furnace annealing of P+ implanted CdTe . J. Cryst. Growth , 72 : 252
  • Magel , L. K. and Sigmon , T. W. 1988 . Dose rate effects in indium-implanted Hg1−xCdxTe . J. Crysi. Growth , 86 : 756
  • Baars , J. , Seelewind , H. , Fritzsche , Ch. , Kaiser , U. and Ziegler , J. 1988 . Arsenic ion implantation in Hg1−xCdxTe . J. Cryst. Growth , 86 : 762
  • Wu , S. Y. , Choyke , W. J. , Takei , W. J. , Noreika , A. J. , Francombe , M. H. and Irwin , R. B. 1982 . Effects of implantation and annealing temperatures on implantation induced damage in HgCdTe . J. Vac. Sci. Technol. , 21 : 255
  • Ghenim , L. , Robert , J. L. , Bousquet , C. , Raymond , A. and Destéfanis , G. L. 1985 . Evidence, by transport measurements under hydrostatic pressure, of resonant level induced by implantation defects in epitaxial layers of Hg1−xCdxTe . J. Cryst. Growth , 72 : 448
  • Bubulac , L. O. , Tennant , W. E. , Riedel , R. A. , Bajaj , J. and Edwall , D. D. 1983 . Some aspects of Li behavior in ion implanted HgCdTe . J. Vac. Sci. Technol. , A1 : 1646
  • Bubulac , L. O. 1985 . The role of epitaxy and substrate on junction formation in ion-implanted HgCdTe . J. Cryst. Growth , 72 : 478
  • Cotton , V. A. and Wilson , J. A. 1986 . Effects of ion implantation on deep electron traps in Hg0. 7Cd0. 3Te . J. Vac. Sci. Technol. , A4 : 2177
  • Shastov , K. V. 1992 . Depth distribution of radiation defects in implanted HgxCd1−xTe crystals . Phys. Status Solidi A , 130 : 293
  • Belas , E. , Höschl , P. , Grill , R. , Franc , J. , Moravec , P. , Lischka , K. , Sitter , H. and Toth , A. 1993 . Deep p-n junction in HgxCd1−xTe created by ion milling . Semicond. Sci. Technol. , 8 : 1695
  • Bahir , G. , Kalish , R. and Nemirovsky , Y. 1982 . Electrical properties of donor and acceptor implanted Hg1−xCdxTe following cw CO, laser annealing . Appl. Phys. Lett. , 47 : 1057
  • Kalish , R. and Bahir , G. 1985 . Formation of p on n photodiodes in Hg1−xCdxTe by ion implantation and cw CO, laser annealing . J. Ciyst. Growth , 72 : 474
  • Kao , T. M. and Sigmon , T. W. 1987 . B+ implantation and postimplant anneal studies in Hg1−xCdxTe . Nucl. Instrum. Methods , B21 : 578
  • Conway , K. L. , Opyd , W. G. , Greiner , M. E. , Gibbons , J. F. , Sigmon , T. W. and Bubulac , L. O. 1982 . Thermal pulse annealing of boron-implanted HgCdTe . Appl. Phys. Lett. , 41 : 150
  • Syz , J. , Beck , J. D. , Orent , T. W. and Schaake , H. F. 1989 . Thermal annealing studies on boron-implanted HgCdTe diodes . J. Vac. Sci. Technol. , A7 : 396
  • Betz , G. and Wehner , G. K. 1984 . “ Sputtering of multi-component materials ” . In Sputtering by Particle Bombardment II , Edited by: Behrisch , R. 11 Berlin : Springer-Verlag .
  • Kelly , R. and Harrison , D. E. 1985 . A summary of the theory of the preferential sputtering of alloys . Mater. Sci. Eng. , 69 : 449
  • Kelly , R. and Oliva , A. 1986 . “ The theory of the preferential sputtering of alloys, including the role of Gibbsian segregation ” . In Erosion and Growth of Solids Stimulated by Atom and Ion Beams , Edited by: Kiriakidis , G. , Carter , G. and Whitton , J. L. 41 Dordrecht : Martinus Nijhoff .
  • Lam , N. Q. 1990 . Physical sputtering of metallic systems by charged-particle impact. . Scan. Microsc. Suppl. , 4 : 311
  • Sigmund , P. 1993 . Alloy and isotope sputtering . Mat. Fiz. Medd. Dan. Vid. Selsk , : 1
  • Kelly , R. 1984 . “ Surface compositional changes by particle bombardment ” . In Chemistry and Physics of Solid Surfaces V , Edited by: Vanselow , R. and Howe , R. Berlin : Springer-Verlag . chap 7.
  • Andersen , H. H. 1984 . “ Ion-bombardment-induced composition changes in alloys and compounds ” . In Ion Implantation and Beam Processing , Edited by: Williams , J. S. and Poate , J. M. Sydney : Academic Press . chap 6.
  • Malherbe , J. B. , Hofmann , S. and Sanz , J. M. 1986 . Preferential sputtering of oxides: a comparison of model predictions with experimental data . Appl. Surf. Sci. , 27 : 355
  • Haff , P. K. 1977 . A model for surface layer composition changes in sputtered alloys and compounds . Appl. Phys. Lett. , 31 : 259
  • Sigmund , P. 1981 . “ Sputtering by ion bombardment: theoretical concepts ” . In Sputtering by Particle Bombardment I , Edited by: Behrisch , R. Berlin : Springer-Verlag . chap 2
  • Kelly , R. 1978 . An attempt to understand preferential sputtering . Nuel. Instrum. Methods , 149 : 553
  • Kelly , R. 1980 . On the problem of whether mass or chemical bonding is more important to bombardment-induced compositional changes in alloys and oxides . Surf. Sci. , 100 : 85
  • Pauling , L. 1960 . The Nature of the Chemical Bond , 3rd ed. Ithaca, NY : Cornell University Press .
  • Brongersma , H. H. , Spaarnay , M. J. and Buck , T. 1978 . Surface segregation in Cu-Ni and Cu-Pt alloys: a comparison of low-energy ion-scattering results with theory . Surf. Sci. , 71 : 657
  • Williams , F. L. and Nason , D. 1975 . Binary alloy surface compositions from bulk thermodynamic data . Surf. Sci. , 45 : 377
  • Johnson , R. A. and Lam , N. Q. 1978 . Solute segregation under irradiation . J. Nucl. Mater. , 69/70 : 424
  • Lam , N. Q. , Leaf , G. K. and Wiedersich , H. 1980 . Sputter-induced surface composition changes in alloys . J. Nucl. Mater. , 88 : 289
  • Lam , N. Q. , Okamoto , P. R. and Wiedersich , H. 1978 . Effects of solute segregation and precipitation on void swelling in irradiated alloys . J. Nucl. Mater. , 74 : 101
  • du Plessis , J. 1990 . Surface segregation . Diffus. Defect Data Part B , 11 : 1
  • du Plessis , J. , van Wyk , G. N. and Taglauer , E. 1989 . Preferential sputtering and radiation enhanced segregation in palladium-platinum . Surf. Sci. , 220 : 381
  • Lam , N. Q. and Wiedersich , H. 1982 . “ Dynamical behavior of the subsurface region in alloys under ion bombardment at high temperatures ” . In Metastable Materials Formation by Ion Implantation , Edited by: Picraux , S. T. and Choyke , W. J. 35 Elsevier .
  • Rehn , L. E. 1982 . “ Surface modification and radiation-induced segregation ” . In Metastable Materials Formation by Ion Implantation , Edited by: Picraux , S. T. and Choyke , W. J. 17 Elsevier .
  • Warwick , A. D. , Piller , R. C. and Sivell , P. M. 1979 . Mechanisms of radiation-induced segregation in dilute nickel alloys . J. Nucl. Mater. , 83 : 35
  • Lam , N. Q. and Leaf , G. K. 1985 . Ion implantation at elevated temperatures. . Mater. Res. Soc. Symp. Proc. , 51 : 467
  • Yacout , A. M. , Lam , N. Q. and Stubbins , J. F. 1992 . Radiation-induced precipitation at the alloy surface during ion bombardment . Nucl. Instrum. Methods. , B71 : 148
  • Wynblatt , P. and Ku , R. C. 1979 . “ Surface segregation in alloys ” . In Interfacial Segregation. , Edited by: Johnson , W. C. and Blakeley , J. M. 115 Metals Park, OH : American Society of Metals .
  • Schulz , F. and Wittmaack , K. 1976 . Model calculation of ion collection in the presence of sputtering. . Radiat. Eff. , 29 : 31
  • Malherbe , J. B. and Hofmann , S. 1980 . Low energy nitrogen implantation profiles in cobalt using AES. . Surf. Interface Anal. , 2 : 187
  • Malherbe , J. B. 1983 . Projected range and straggling measurements of low energy nitrogen in silicon . Radial. Eff. , 70 : 261
  • Malherbe , J. B. 1984 . Implantation parameters of low energy nitrogen in copper . Nucl. Instrum. Methods. B2 , : 774
  • Wittmaack , K. and Blank , P. 1977 . “ The influence of recoil implantation of absorbed oxygen on the entrapment of xenon in aluminum and silicon ” . In Ion Implantation in Semiconductors, 1976. , Edited by: Chernov , F. , Borders , J. A. and Brice , D. K. 363 New York : Plenum Press .
  • Wittmaack , K. and Blank , P. 1977 . Radiation-enhanced outdiffusion of xenon implanted in aluminum. . Appl. Phys. Lett. , 31 : 21
  • Wittmaack , K. , Blank , P. and Wach , W. 1978 . High fluence retention of noble gases implanted in silicon . Radiat. Eff. , 39 : 81
  • Blank , P. , Wittmaack , K. and Schulz , F. 1976 . The influence of sputtering, range shortening and stress-induced outdiffusion on the retention of xenon implanted in silicon . Nucl. Instrum. Methods , 132 : 387
  • Menzel , M. and Wittmaack , K. 1981 . Comparison of the retention characteristics of low-energy xenon and caesium implanted in silicon . Nucl. Instrum. Methods , 191 : 235
  • Wach , W. and Wittmaack , K. 1978 . Comparison of xenon retention in ion implanted silicon dioxide and oxygen-doped silicon. . Nucl. Instrum. Methods. , 149 : 259
  • Wach , W. and Wittmaack , K. 1981 . Implantation and sputtering in the presence of reactive gases: bombardment-induced incorporation of oxygen and related phenomena . J. Appl. Phys. , 52 : 3341
  • Kempf , J. 1978 . AES investigations of Ar+ ion retention in Si during Ar sputtering . Appl. Phys. , 16 : 43
  • Kirschner , J. and Etzkorn , H. W. 1979 . Sputtering of amorphous silicon films by 0. 5 to 5 keV Ar+ ions . Appl. Surf. Sci. , 3 : 251
  • Carter , G. , Armour , D. G. , Donnelly , S. E. , Ingram , D. C. and Webb , R. P. 1980 . The injection of inert gas ions into solids: their trapping and escape. . Radiat. Eff. , 53 : 143
  • Gries , W. H. 1979 . Quantitative ion implantation: theoretical aspects . Int. J. Mass Spectrom. Ion Phys. , 30 : 97
  • Singer , I. L. , Murday , J. S. and Cooper , L. R. 1981 . Surface composition changes in GaAs due to low-energy ion bombardment . Surf. Sci. , 108 : 7
  • Tsang , J. C. , Kahn , A. and Mark , P. 1980 . Comparison of LEED and Auger data from cleaved and sputtered-annealed InP (110) surfaces. . Surf. Sci. , 97 : 119
  • Barnard , W. O. , Malherbe , J. B. and Myburg , G. 1991 . AES study of InP surfaces subjected to chemical cleaning and Ar+ sputtering . S. Afr. J. Phys. , 14 : 22
  • Malherbe , J. B. and van der Berg , N. G. , Surface compositional changes of InP due to krypton ion bombardment. . Surf. Interface Anal. , in press.
  • Mayer , T. M. and Barker , R. A. 1982 . Simulation of plasma-assisted etching processes by ion-beam techniques . J. Vac. Sci. Technol. , 21 : 757
  • van Roijen , R. , Kemp , M. B. M. , Bulle-Lieuwma , C. W. T. , van Ijzendoorn , L. J. and Thijssen , T. L. G. 1991 . Surface analysis of reactive ion-etched InP . J. Appl. Phys. , 70 : 3983
  • Galtet , D. , Hollinger , G. and Santinelli , C. 1992 . In situ characterization of InP surfaces after low-energy hydrogen ion cleaning. . J. Vac. Sci. Technol. , B10 : 1267
  • Olego , D. J. , Schachter , R. , Viscogliosi , M. and Bunz , L. A. 1986 . Optoelectronic and structural properties of sputter etched surfaces of InP . Appl. Phys. Lett. , 49 : 719
  • Dubreuil , B. , Gibert , T. , Barthe , M. F. and Debrun , J. L. 1992 . RIMS study of low energy-laser sputtering of metal and semiconductor surfaces . Inst. Phys. Conf. Ser. , 128 : 265
  • Bayliss , C. R. and Kirk , D. L. 1975 . The effect of temperature on the surface structure and stoichiometry of (100) InP surfaces. . Thin Solid Films , 29 : 97
  • Jones , C. J. and Kirk , D. L. 1979 . Some considerations of the limitations of the Auger-depth-profiling technique as applied to silver metal and (100) surfaces of indium phosphide . J. Phys. D , 12 : 837
  • Stair , K. A. and Chung , Y.-W. 1986 . Fermi-level pinning and growth characteristics of Au on InP(1 1 1) . Appl. Surf. Sci. , 26 : 381
  • Clark , D. T. , Fok , T. , Roberts , G. G. and Sykes , R. W. 1980 . An investigation by electron spectroscopy for chemical analysis of chemical treatments of the (100) surface of n-type InP epitaxial layers for Langmuir film deposition . Thin Solid Films , 70 : 261
  • Barcz , A. , Croset , M. and Mercandalli , M. L. 1980 . Quantitative analysis of III-V compounds, using low-energy ion-scattering spectrometry (ISS) . Inst. Phys. Conf. Ser. , 54 : 124
  • Barcz , A. , Croset , M. and Mercandalli , M. L. 1980 . Quantitativity in III-V compounds by low-energy ion scattering spectrometry (ISS) . Surf. Sci. , 95 : 511
  • Williams , R. S. 1982 . Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces. . Solid Stale Commun. , 41 : 153
  • Tu , C. W. and Schlier , A. R. 1982 . Surface studies of InP by electron energy loss spectroscopy and Auger electron spectroscopy . Appl. Surf. Sci. , 11/12 : 355
  • Shapira , Y. , Brillson , L. J. and Heller , A. 1983 . Investigation of InP surface and metal interfaces by surface photovoltage and Auger electron spectroscopies . J. Vac. Sci. Technol. , Al : 766
  • Gruzza , B. , Achard , B. and Pariset , C. 1985 . Surface composition of (100)InP substrates bombarded by low energy Ar+ ions, studied by AES and EPES . Surf. Sci., 162 , : 202
  • Gruzza , B. , Pariset , C. and Abdellaoui , S. 1990 . An ELS and AES study of InP(100) surfaces during Sb atom condensation . Surf. Interface Anal. , 16 : 54
  • Gruzza , B. and Pariset , C. 1991 . Some aspects of AES, EELS and EPES application. . Surf. Sci. , 247 : 408
  • Gruzza , B. , Porte , A. , Bideux , L. , Jardin , C. and Miloua , J. 1992 . Models for the interpretation of the different interfaces SbAnP(100) using quantitative results of AES and EELS . Acta Phys. Pol. A , 81 : 223
  • Achard , B. , Gruzza , B. and Pariset , C. 1985 . Effect of ion bombardment at low energy on (100)InP surfaces, studied by Auger electron spectroscopy . Surf. Sci. , 160 : L519
  • Jin , X. , Yu , M. and Wang , X. 1985 . The elimination of In islands on InP surfaces and its mechanism . Chin. Phys. Lett. , 2 : 345
  • Lau , W. M. , Sodhi , R. N. S. , Flinn , B. J. , Tan , K. H. and Bancroft , G. M. 1987 . Photoemission study of sputter-etched InP surfaces . Appl. Phys. Lett. , 51 : 177
  • Sodhi , R. N. S. , Lau , W. M. and Ingrey , S. I. J. 1988 . Core-level binding energy shifts on InP surfaces induced by sputtering and annealing . Surf. Interface Anal. , 12 : 321
  • Wang , X. 1988 . Investigation of atomic and electronic structures of InP polar surfaces . Appl. Surf. Sci. , 33/34 : 88
  • Abdellaoui , S. , Gruzza , B. , Pariset , C. , Bouslama , M. , Jardin , C. and Robert , D. 1989 . Study of Sb condensation on InP(100) substrates previously cleaned by low energy Ar+ ion beam . Surf. Sci. , 208 : L21
  • Pearton , S. J. , Chakrabarti , U. K. , Perley , A. P. and Jones , K. S. 1990 . Ion milling damage in InP and GaAs . J. Appl. Phys. , 68 : 2760
  • Schaefer , J. A. , Frankel , D. J. and Lapeyre , G. J. 1990 . Active sites of adsorption on cleaved and sputtered indium phosphide surfaces . Z. Phys. B , 79 : 259
  • Valeri , S. and Lolli , M. 1990 . AES, EELS and XPS study of ion-induced GaAs and InP (110) surface and subsurface modifications. . Surf. Interface Anal. , 16 : 59
  • Valeri , S. , Lolli , M. and Sberveglieri , P. 1990 . AES and EELS study of alkali-metal adsorption kinetics on either cleaved or sputtered GaAs and InP (110) surfaces . Surf. Sci. , 238 : 63
  • Malherbe , J. B. and Barnard , W. O. 1991 . Preferential sputtering of InP: an AES investigation. . Surf. Sci. , 255 : 309
  • Malherbe , J. B. 1993 . Ion angle dependence in the preferential sputtering of InP . Appl. Surf. Sci. , 70/71 : 322
  • Morais , J. , Fazan , T. A. and Landers , R. 1994 . Ion induced composition changes on (110) InP cleaved surface . Phys. Status Solidi , 141 : K19
  • Nelson , G. C. 1976 . Search for preferential sputtering in Ag/Au alloys . J. Vac. Sci. Technol. , 13 : 974
  • Holloway , P. H. and Bhattacharya , R. S. 1982 . Preferential sputtering of PtSi, NiSi2 and AgAu . J. Vac. Sci. Technol. , 20 : 444
  • Hofmann , S. and Zalar , A. 1979 . Electron beam effects during the sputter profiling of thin Au/Ag films analysed by Auger electron spectroscopy. . Thin Solid Films , 56 : 337
  • Santorius , B. , Schlak , M. , Rozenzweig , M. and Pärschke , K. 1988 . Thermal degradation effects in InP . J. Appl. Phys. , 63 : 4677
  • Hofmann , S. 1992 . Charging and charge compensation in AES analysis of insulators . J. Electron. Spectrosc. Relat. Phenom. , 59 : 15
  • Kempf , J. , Nonnenmacher , M. and Wagner , H. H. 1993 . Electron and ion beam induced heating effects in solids measured by laser interferometry . Appl. Phys. , A56 : 385
  • Klekamp , A. , Snowdon , K. J. and Heiland , W. 1989 . Real time study of the change in surface composition of insulators under electron bombardment. . Radiat. Eff. , 108 : 241
  • Wiedmann , L. , Ganschow , O. and Benninghoven , A. 1978 . Contamination of clean metal surfaces associated with electron bombardment in conventional AES analysis . J. Electron. Spectrosc. Relat. Phenom. , 13 : 243
  • Roland , G. , Baumann , H. and Bethge , K. 1990 . RBS analysis of GaAs and InP after electron beam annealing. . Nucl. Instrum. Methods , B50 : 145
  • di Bona , A. , Facchini , A. , Valeri , S. , Ottaviani , G. and Piccirillo , A. 1991 . Structural and compositional modifications of III-V ternary and quaternary compounds induced by ion bombardment. . Mater. Res. Soc. Symp. Proc. , 223 : 197
  • Valeri , S. , di Bona , A. and Nava , E. 1993 . Diffraction effects in Auger quantitative analysis on III-V compounds . Appl. Surf. Sci. , 70/71 : 20
  • Valeri , S. and di Bona , A. 1993 . Auger electron spectroscopy for structural changes . Riv. Nuovo Cimento , 16 : 1
  • Malherbe , J. B. , Barnard , W. O. , Strydom , I. Le R. and Louw , C. W. 1992 . Preferential sputtering of GaAs . Surf. Interface Anal. , 18 : 491
  • Taglauer , E. 1982 . Surface modifications due to preferential sputtering . Appl. Surf. Sci. , 13 : 80
  • Baretzky , B. and Taglauer , E. 1985 . Does preferential sputtering depend on the angle of incidence? . Surf. Sci. , 162 : 996
  • Baretzky , B. , Möller , W. and Taglauer , E. 1987 . Colli-sional processes in preferential sputtering of tantalum oxide . Nucl. Instrum. Methods , B18 : 496
  • van Wyk , G. N. , du Plessis , J. , Bangwei , Z. and Taglauer , E. 1989 . Preferential sputtering in amorphous CuTi alloys . S. Afr. J. Phys. , 12 : 58c
  • Baretzky , B. , Möller , W. and Taglauer , E. 1992 . Collision dominated preferential sputtering of tantalum oxide. . Vacuum , 43 : 1207
  • Nagai , Y. , Nishimura , C. and Toshima , T. 1985 . Primary Ar+ ion bombardment effect on Ni-Fe film composition formed by ion beam sputtering . J. Vac. Sci. Technol. , A3 : 2147
  • Corvini , P. , Kahn , A. and Wagner , S. 1985 . Surface order and stoichiometry of sputter-cleaned and annealed CulnSe2 . J. Appl. Phys. , 57 : 2967
  • Moses , A. J. 1978 . The Practicing Scientist's Handbook. , New York : Van Nostrand Reinhold . chap. 9.
  • Biersack , J. P. 1981 . Calculation of projected ranges — analytical solutions and a simple general algorithm . Nucl. Instrum. Methods , 182/183 : 199
  • Ziegler , J. F. TRIM: The Transport of Ions in Matter , Yorktown, NY : IBM Res. 28–0 .
  • For this calculation, the average composition for the top five layers (=AES composition) was taken to represent the composition of the sputtered samples of References 298 to 301, viz., InP0. 82
  • Kerr , J. A. 1992 . “ Strength of chemical bonds ” . In Handbook of Chemistry and Physics , Edited by: Lide , D. R. 9 – 138 . Boca Raton, FL : CRC Press . Table 2
  • Allred , A. L. 1987 . McGraw-Hill Encyclopedia of Science and Technology , 6th ed. Vol. 6 , 210 New York : McGraw-Hill .
  • Andersen , H. H. 1987 . Computer simulations of atomic collisions in solids with special emphasis on sputtering. . Nucl. Instrum. Methods , B18 : 321
  • Sakalas , A. and Zhukauskas , S. 1989 . GaAs surface low-dose irradiation pretreatment related reduction of Schottky barrier height. Real or effective?. . Solid State Commun. , 70 : 363
  • van Oostrom , A. 1976 . Application of AES to the study of selective sputtering of thin films . J. Vac. Sci. Technol. , 13 : 224
  • Valeri , S. and di Bona , A. 1991 . Alkali metals adsorption kinetics on sputtered and cleaved GaAs (110) surfaces . Surf. Sci. , 251/252 : 995
  • Wang , Y. X. and Holloway , P. H. 1984 . Summary abstract: effect. of ion sputtering on the interface chemistry and electrical properties of Au/n-GaAs (100) Schottky contacts . J. Vac. Sci. Technol. , A2 : 567
  • Wang , Y. X. and Holloway , P. H. 1984 . Effect of ion sputtering on interface chemistry and electrical properties of Au/n-GaAs (100) Schottky contacts . J. Vac. Sci. Technol. , B2 : 613
  • McGuire , G. E. 1978 . Effects of ion sputtering on semiconductor surfaces . Surf. Sci. , 76 : 130
  • Bussing , T. D. , Holloway , P. H. , Wang , Y. X. , Moulder , J. F. and Hammond , J. S. 1988 . Composition depth profiles of oxidized silicon and sputtered GaAs from angle-resolved X-ray photoelectron spectroscopy . J. Vac. Sci. Technol. , B6 : 1514
  • Barcz , A. , Bugajski , M. , Croset , M. and Mercandalli , L. M. 1983 . Stoichiometry changes in III-V compounds under ion bombardment . Nucl. Instrum. Methods. , 209/210 : 621
  • Jacobi , K. and Ranke , W. 1976 . Oxidation and annealing of GaP and GaAs (111) — faces studied by AES and UPS . J. Electron Spectrosc. Relat. Phenom. , 8 : 225
  • Ludeke , R. , Esaki , L. and Chang , L. L. 1974 . Ga1−xAlxAs superlattices profiled by Auger electron spectroscopy . Appl. Phys. Lett. , 24 : 417
  • Mizokawa , Y. , Iwasaki , H. , Nishitani , R. and Nakamura , S. 1978 . ESCA studies of Ga, As, GaAs, Ga2O3, As2O3 and As2O5 . J. Electron Spectrosc. Relat. Phenom. , 14 : 129
  • Vosylius , J. J. , Pranevicius , L. J. , Puras , R. D. and Sakalas , A. P. 1983 . Analysis of the element composition on the surface of heated GaAs under ion bombardment . Litov. Fiz. Sb. , 23 : 66
  • Chang , C. C. , Citrin , P. H. and Schwartz , B. 1977 . Chemical preparation of GaAs surfaces and their characterization by Auger electron and X-ray photoemis-sion spectroscopies. . J. Vac. Sci. Technoi. , 14 : 943
  • Schwartz , G. P. , Gualtieri , G. J. , Kammlott , G. W. and Schwartz , B. 1979 . An X-ray photoelectron spectroscopy study of native oxides on GaAs . J. Electrochem. Soc. , 126 : 1737
  • Holloway , P. H. 1986 . Progress in instrumentation, data reduction, and depth profiles in Auger electron spectroscopy. . Appl. Surf. Sci. , 26 : 550
  • Rabinzohn , P. , Gautherin , G. , Agius , B. and Cohen , C. 1984 . Cleaning of Si and GaAs crystal surfaces by ion bombardment in the 50–1500 eV range . J. Electrochem. Soc. , 131 : 905
  • Feng , G. F. , Holtz , M. , Zallen , R. , Epp , J. M. , Dillard , J. G. , Cole , E. , Johnson , P. , Sen , S. and Burton , L. C. 1989 . Optical, chemical and electrical characterization of ion-etched gallium arsenide surfaces. . Mater. Res. Soc. Symp. Proc. , 93 : 381
  • Orrman-Rossiter , K. G. , AI-Bayati , A. H. and Armour , D. G. 1990 . Low energy ion-scattering of the GaAs (001) surface. . Surf. Sci. , 225 : 341
  • Valeri , S. , Lancellotti , M. G. , di Bona , A. , Granozzi , G. and Rizzi , G. A. 1992 . Crystalline effects on Auger and photoelectron emission from clean and Cs-covered GaAs (110) surfaces . Appl. Surf. Sci. , 56 : 205
  • Valeri , S. and di Bona , A. 1991 . Alkali metals adsorption kinetics on sputtered and cleaved GaAs (110) surfaces. . Surf. Sci. , 251 : 995
  • DeLouise , L. A. 1991 . Investigation of the mechanism of Ar+ ion-assisted O2 etching of GaAs 1110): role of ion-induced charge acceptor states . J. Appl. Phys. , 70 : 1718
  • Vaseashta , A. , Elshabini-Riad , A. and Burton , L. C. 1991 . Effects of low energy Ar+ ion bombardment on GaAs . Mater. Sci. Eng. , B9 : 489
  • Wright , S. L. , Marks , R. F. and Savoy , R. J. 1988 . In situ measurement of the composition of molecular-beam epitaxial (A.l, Ga)As by Auger electron spectroscopy . J. Vac. Sci. Technol. , B6 : 1105
  • Epp , J. M. and Dillard , J. G. 1989 . Effect of ion bombardment on the chemical reactivity of gallium arsenide (100) . Chem. Mater. , 1 : 325
  • Cossu , G. , Ingo , G. M. , Mattogno , G. , Padeletti , G. and Viticoli , S. 1992 . Auger sputtering profiling of an Al0. 3Ga0. 3As/GaAs superlattice grown by molecular beam epitaxy . Appl. Surf. Sci. , 56–58 : 708
  • DeLouise , L. A. 1992 . Reactive Ni ion bombardment of GaAs(110): a method for GaN thin film growth . J. Vac. Sci. Technol. , A10 : 1637
  • DeLouise , L. A. 1993 . Nitridation of GaAs (110) using energetic N+ and N+ 2 ion beams . J. Vac. Sci. Technol. , A11 : 609
  • Singer , I. L. , Murday , J. S. and Cooper , L. R. 1978 . Abstract: composition changes in GaAs due to low-energy ion bombardment . J. Vac. Sci. Technol. , 15 : 725
  • Singer , I. L. , Murday , J. S. and Comas , J. 1981 . Preferential sputtering from disordered GaAs. . J. Vac. Sci. Technol. , 18 : 161
  • Basol , B. M. , Ou , S. S. and Stafsudd , O. M. 1985 . Type conversion, contacts, and surface effects in electroplated CdTe films . J. Appl. Phys. , 58 : 3809
  • Anthony , T. C. , Fahrenbruch , A. L. and Bube , R. H. 1982 . Low resistance contacts to p-type cadmium telluride . J. Electron. Mater. , 11 : 89
  • Kahn , A. 1983 . Semiconductor surface structures. . Surf. Sci. Rep. , 3 : 193
  • Kahn , A. 1983 . Atomic geometries of compound semiconductor surfaces and interfaces . J. Vac. Sci. Technol. , A1 : 684
  • Duke , C. B. , Patón , A. and Kahn , A. 1983 . Atomic geometry of GaSb (110): determination via elastic low-energy electron diffraction intensity analysis. . Phys. Rev. B , 27 : 3436
  • Kubier , B. , Ranke , W. and Jacobi , K. 1980 . LEED and AES of stoichiometric and arsenic-rich GaAs (110) surfaces prepared by molecular beam epitaxy . Surf. Sci. , 92 : 519
  • Miller , D. L. 1976 . Preparation and characterization of ultrathin Pb and In films on PbTe and Te . J. Vac. Sci. Technol. , 13 : 1138
  • Schweitzer , M. O. , Leibsle , F. M. , Jones , T. S. , McConville , C. F. and Richardson , N. V. 1993 . An STM study of the InSb (100)-c(8 × 2) surface . Surf. Sci. , 280 : 63
  • Chang , S.-C. and Mark , P. 1975 . LEED analysis of the principal nonpolar (1120) and (101O) surfaces of cadmium sulfide . J. Vac. Sci. Technol. , 12 : 624
  • Kohiki , S. , Nishikura , K. , Wada , T. and Hirao , T. 1992 . Characterization of single crystalline CdTe surface . Appl. Surf. Sci. , 59 : 39
  • Solzbach , U. and Richter , H. J. 1980 . Sputter cleaning and dry oxidation of CdTe, HgTe and Hg0. 8Cd0. 2Te surfaces . Surf. Sci. , 97 : 191
  • Brillson , L. J. 1975 . Surface photovoltage and Auger spectroscopy studies of (1120) CdS surface . J. Vac. Sci. Technol. , 12 : 249
  • Morris , G. C. and Wood , B. J. 1991 . Quantitative surface analysis of II-VI compounds . Mater. Forum , 15 : 44
  • Chieh , E. K. and Munir , Z. A. 1991 . AES investigation of the composition of polar {0001} surfaces of CdS . J. Mater. Sci. , 26 : 4268
  • Ebina , A. , Asano , K. and Takahashi , T. 1980 . Surface properties of clean, and with adsorbed oxygen, surfaces of CdTe {110}, (111), and (100) and of CdSe {0001} studied by electron-energy-loss spectroscopy and Auger-electron spectroscopy . Phys. Rev. B , 22 : 22
  • Ricco , A. J. , White , H. S. and Wrighton , M. S. 1984 . X-ray photoelectron and Auger electron spectroscopic study of the CdTe surface resulting from various surface pretreatments: correlation of photoelectrochemical and capacitance-potential behavior with surface chemical composition . J. Vac. Sci. Technol. , A2 : 910
  • Feldman , R. D. , Opila , R. L. and Bridenbaugh , P. M. 1985 . Auger electron spectroscopic study of the etching of cadmium telluride and cadmium manganese telluride . J. Vac. Sci. Technol. , A3 : 1988
  • Lu , Y.-C. , Stahle , C. M. , Feigelson , R. S. and Morimoto , J. 1987 . Etching on polar (111) surfaces of CdTe crystals studied with Auger electron spectroscopy . J. Appl. Phys. , 62 : 4453
  • Lu , Y.-C. , Stahle , C. M. , Morimoto , J. , Bube , R. H. and Feigelson , R. S. 1987 . Determination of crystallo-graphic polarity of CdTe crystals with Auger electron spectroscopy . J. Appl. Phys. , 61 : 924
  • Zelaya , O. , Sánchez-Sinencio , F. , Gonzalez-Hernandez , J. , Peña , J. L. , Farias , M. H. , Cota-Araiza , L. , Hirata , G. A. and Rabago , F. 1989 . Characterization of CdTe polycrystalline films by X-ray photoelectron and Auger spectroscopies . J. Vac. Sci. Technol. , A7 : 245
  • Stahle , C. M. and Helms , C. R. 1992 . Ion sputter effects on HgTe, CdTe, and HgCdTe . J. Vac. Sci. Technol. , A10 : 3239
  • Carin , R. , Deville , J. P. and Werckmann , J. 1990 . An XPS study of GaN thin films on GaAs . Surf. Interface Anal. , 16 : 65
  • Liau , Z. L. , Brown , W. L. , Homer , R. and Poate , J. M. 1977 . Surface-layer composition changes in sputtered alloys and compounds . Appl. Phys. Lett. , 30 : 626
  • Bondarchuk , A. B. , Gofea , S. N. , Koval' , I. F. , Mel'nik , P. V. and Nakhodkin , N. G. 1986 . Interaction of moderate-energy argon ions with a (111)B surface of gallium phosphide . Sov. Phys. Solid State , 28 : 1577
  • Yurasova , V. E. and Linnik , S. P. 1983 . Sputtering of two-component alloys and compounds . Z. Phys. Chem. , 264 : 1079
  • Linnik , S. P. , Buleev , M. A. , Yurasova , V. E. , Zaporozhchenko , V. I. and Chernysh , V. S. 1980 . Selective sputtering of single crystals of binary semiconductor compounds . Radiat. Eff. , 52 : 191
  • Maksimov , S. K. , Egorov , V. L. , Kryuk , V. V. , Piskunov , D. I. , Pitirimova , E. A. and Veselov , V. F. 1982 . Effect of stoichiometric disturbances in A111BV compounds during ion implantation . Phys. Status Solidi A , 73 : K283
  • Jones , R. G. , Singh , N. K. and McConville , C. F. 1989 . The c(4 × 4) clean surface reconstruction of InSb (001) formed by UHV chemical etching using iodine and chlorine. . Surf. Sci. , 208 : L34
  • Bettini , M. and Richter , H. J. 1979 . Oxidation in air and thermal desorption on PbTe, SnTe and Pb0. 8Sn0. 2Te surfaces . Surf. Sci. , 80 : 334
  • Zagorenko , A. I. and Zaporozchenko , V. I. 1989 . Quantitative Auger electron spectroscopy of binary systems: matrix correction . Surf. Interface Anal. , 14 : 438
  • Roth , J. , Bohdansky , J. and Martinelli , A. P. 1980 . Low energy light ion sputtering of metals and carbides . Radiat. Eff. , 48 : 213
  • Kaplan , R. 1984 . Surface studies of epitaxial β-SiC on Si (100) . J. Appl. Phys. , 56 : 1636
  • Fukuda , S. , Mohri , M. and Yamashina , T. 1984 . Compositional changes in surface region of SIC single-crystal due to hydrogen and helium ion irradiation. . Fusion Technol. , 6 : 420
  • Bellina , J. J. , Ferrante , J. and Zeller , M. V. 1986 . Surface modification strategies for (100) 3C-SiC . J. Vac. Sci. Technol. , A4 : 1692
  • Bellina , J. J. and Zeller , M. V. 1986 . Stoichiometric changes in the surface of (100) cubic SiC caused by ion bombardment and annealing . Appl. Surf. Sci. , 25 : 380
  • Laidani , N. , Capelletti , R. , Elena , M. , Guzman , L. , Mariotto , G. , Miotello , A. and Ossi , P. M. 1993 . Spectro-scopic characterization of thermally treated carbon-rich Si1−xC, films. . Thin Solid Films , 223 : 114
  • Laidani , N. , Bonelli , M. , Miotello , A. , Guzman , L. , Calliari , L. , Elena , M. , Bertoncello , B. , Glisenti , A. , Capelletti , R. and Ossi , P. 1993 . Chemical and compositional changes induced by N+ implantation in amorphous SiC films . J. Appl. Phys. , 74 : 2013
  • Miotello , A. , Calliari , L. , Kelly , R. , Laidani , N. , Bonelli , M. and Guzman , L. 1993 . Composition changes in Ar+ and e−-bombarded SiC: an attempt to distinguish ballistic and chemically guided effects . Nucl. Instrum. Methods , B80 : 931
  • Castle , J. E. , Liu , H. D. , Watts , J. F. , Zhang , J. P. , Hemment , P. L. F. , Bussmann , U. , Robinson , A. K. , Newstead , S. M. , Powell , A. R. , Whall , T. E. and Parker , E. H. C. 1991 . An investigation of Si0. 5Ge0. 5 alloy oxidation by high dose oxygen implantation. . Nucl. Instrum. Methods. , B55 : 697
  • Greene , J. E. , Barnett , S. A. , Cadien , K. C. and Ray , M. A. 1982 . Growth of single crystal GaAs and meta-stable (GaSb)1−xGex alloys by sputter deposition: ion-surface interaction effects . J. Cryst. Growth , 56 : 389
  • Nitz , H. M. , Ganschow , O. , Kaiser , U. , Wiedmann , L. and Benninghoven , A. 1981 . Quasisimultaneous SIMS, AES, XPS, and TDMS study of preferential sputtering, diffusion, and mercury evaporation in CdaHg1−xTe . Surf. Sci. , 104 : 365
  • Procop , M. 1992 . XPS data for sputter-cleaned In0. 53Ga0. 47As, GaAs, and InAs surfaces . J. Electron. Spectrom. Relat. Phenom. , 59 : R1
  • Morgen , P. and Wilson , J. A. 1987 . Preferential chemical reactions during noble gas ion sputtering of Hg1−xCdxTe and its oxides . Nucl. Instrum. Methods , B26 : 585
  • Valeri , S. , di Bona , A. , Engeli , E. , Bordiga , S. and Piccirello , A. 1991 . Auger electron spectroscopy study of cleaved and sputter-etched In0. 53Ga0. 47 As surfaces. . Thin Solid Films , 197 : 179
  • Morgen , P. , Silberman , J. A. , Lindau , I. , Spicer , W. E. and Wilson , J. A. 1982 . Oxidation of Hg1−xCdxTe studied with surface sensitive techniques . J. Electron. Mater. , 11 : 597
  • Morgen , P. , Silberman , J. A. , Lindau , L. , Spicer , W. E. and Wilson , J. A. 1982 . AES sputter profiles of anodic oxide films on (Hg, Cd)Te . J. Vac. Sci. Technol. , 21 : 161
  • Neff , H. , Lay , K. Y. , Abid , B. , Lange , P. , Lucovsky , G. and Bachmann , K. J. 1986 . Sputtering and native oxide formation on (110) surfaces of Cdl1−xMn5Te . J. Appl. Phys. , 60 : 151
  • Neff , H. , Lay , K. Y. , Su , M. S. , Lange , P. and Bachmann , K. J. 1987 . Sputter induced near surface electronic defects in group II-VI compound semiconductor alloys. . Surf. Sci. , 189 : 661
  • Rufus , I. B. , Ramakrishnan , V. , Viswanathan , B. and Kuriacose , J. C. 1992 . Surface characterization of CdS0. 62Se0. 38 by X-ray photoelectron spectroscopy . J. Mater. Sci. Lett. , 11 : 252
  • Seelmann-Eggebert , M. , Brandt , G. and Richter , H. J. 1984 . Comments on the composition of anodic films on Hg0. 8Cd0. 2Te . J. Vac. Sci. Technol. , A2 : 11
  • Davis , G. D. , Sun , T. S. , Buchner , S. P. and Byer , N. E. 1981 . Anodic oxide composition and Hg depletion at the oxide-semiconductor interface of H1−xCdxTe . J. Vac. Sci. Technol. , 19 : 472
  • Davis , G. D. , Buchner , S. P. , Beck , W. A. and Byer , N. E. 1983 . Use of surface behavior diagrams to compare anodic and photochemical oxides of Hg0. 8Cd0. 2Te . Appl. Surf. Sci. , 15 : 238
  • Sun , T. S. , Buchner , S. P. , Byer , N. E. and Chen , J. M. 1978 . Oxygen uptake on an epitaxial PbSnTe (111) surface . J. Vac. Sci. Technol. , 15 : 1292
  • Sun , T. S. , Buchner , S. P. and Byer , N. E. 1980 . Oxide and interface properties of anodic films on Hg1−xCdxTe . J. Vac. Sci. Technol. , 17 : 1067
  • Grant , R. W. , Pasko , J. G. , Longo , J. T. and Andrews , A. M. 1976 . ESCA surface studies of Pb1−xSnxTe devices . J. Vac. Sci. Technol. , 13 : 940
  • Chen , W. D. , Bender , H. , Demesmaeker , A. , Vandervorst , W. and Maes , H. E. 1988 . Quantitative Auger electron spectroscopy of AlxGa1−xAs layers and superstructures grown by MBE . Surf. Interface Anal. , 12 : 156
  • Christie , A. B. , Sutherland , L. and Walls , J. M. 1983 . Studies of the composition, ion-induced reduction and preferential sputtering of anodic oxide films on Hg0. 8Cd0. 2Te by XPS . Surf. Sci. , 135 : 225
  • Sander , P. , Altebockwinkel , M. , Storm , W. , Wiedmann , L. and Benninghoven , A. 1989 . A versatile spectrometer system for quantitative surface and in-depth analysis with secondary ion and secondary neutral mass spectroscopy, Auger electron and X-ray photoelectron spectroscopy . J. Vac. Sci. Technol. , A7 : 3305
  • Chakarov , I. R. , Todorov , S. S. and Karpuzov , D. S. 1992 . Dynamic Monte-Carlo simulation of compositional change and atomic redistribution in multicom-ponent targets under ion bombardment. . Nucl. Instrum. Methods , B69 : 193
  • Bolkhovityanov , Yu. B. , Bolkhovityanova , R. I. , Vaulin , Yu. D. , Katkov , A. V. and Ol'shanetskii , B. Z. 1989 . Study of InGaAsP/GaAs(111)A heterostructures with the aid of layer-by-layer Auger analysis . Inorg. Mater. , 25 : 902
  • Arthur , J. R. and LePore , J. J. 1977 . Quantitative analysis of AlxGa1−xAs by Auger electron spectroscopy . J. Vac. Sci. Technol. , 14 : 979
  • Wilson , J. A. and Cotton , V. A. 1983 . (HgCd)Te-SIO2 interface structure . J. Vac. Sci. Technol. , A1 : 1719
  • Chen , W. D. and Cui , Y. D. 1993 . Quantitative analysis of InxGa1−xAs by Auger electron spectroscopy . J. Vac. Sci. Technol. , A11 : 2379
  • Morais , J. , Machado , A. M. , Sacilotti , M. A. and Landers , R. 1990 . AES sputter depth profiles applied to interface analysis of GalnAs/InP grown by atmospheric pressure MOCVD . Appl. Surf. Sci. , 44 : 161
  • Olivier , J. , Padeletti , G. , Ingo , G. M. , Mattogno , G. , Bosacchi , A. and Franchi , S. 1993 . Quantitative analysis of AxGa1−xAs/GaAs multiquantum wells by means of AES depth profiling and small area XPS . Appl. Surf. Sci. , 70/71 : 89
  • Padeletti , G. and Ingo , G. M. Small-area XPS investigation on ion-induced chemical modifications during depth-profiling of an AlxGa1−xAs/GaAs structure . Surf. Interface Anal. , in press.
  • Erickson , L. P. and Phillips , B. F. 1983 . Examination of MBE GaAs/Al0. 3Ga0. 7As superlattices by Auger electron spectroscopy . J. Vac. Sci. Technol. , B1 : 158

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