References
- Dimitrijev, S. Understanding Semiconductor Devices; Oxford University Press: New-Oxford, 2000.
- Pickard, C.; Brisset, C.; Qittard, O.; Marcean, M.; Hoffman, A.; Joffre, F.; Charles, J.P. IEEE Trans. Nucl. Sci. 2000, 47, 627. doi: 10.1109/23.856490
- Park, M.S.; Wie, C.R. IEEE Trans. Nucl. Sci. 2001, 48, 2285. doi: 10.1109/23.983208
- Bo, G.; Xuefend, Y.; Diyuan, R.; Gang, L.; Yiyuan, W.; Jing, S.; Jiangwei, C. J. Semicond. 2010, 31, 044007. doi: 10.1088/1674-4926/31/4/044007
- Pejovic, M.; Ristic, G.; Jaksic, A. Appl. Surf. Sci. 1997, 108, 141. doi: 10.1016/S0169-4332(96)00573-9
- Pejovic, M.; Osmokrovic, P.; Pejovic, M.; Stankovic, K. Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide-Semiconductor Transistors. In Current Topic in Radiation Research: Nenoi M., Ed.; INTECH, Institute for New Teshnologies: Maastricht, 2012.
- Lipovetzky, J.; Redin, E.G.; Garcia Inza, M.A.; Carbonetto, S.; Faigon, A. IEEE Trans. Nucl. Sci. 2010, 57, 848. doi: 10.1109/TNS.2010.2042178
- Pejovic, M.M. Facta Univ. Ser.: Electron Energy. 2016, 29, 509. doi: 10.2298/FUEE1604509P
- Asensio, L.J.; Carvajal, M.A.; Lopez-Villinueva, J.A.; Vilches, M.; Lallena, A.M.; Palma, A.J. Sens. Actuators A. 2006, 125, 288. doi: 10.1016/j.sna.2005.08.020
- Martinez-Garcia, M.S.; Simancas, F.; Palma, A.J.; Lallena, A.M.; Banqueri, J.; Carvajal, M.A. Sens. Actuators A. 2014, 210, 175. doi: 10.1016/j.sna.2014.02.019
- Martinez-Garcia, M.S.; Torres del Rio, J.; Jaksic, A.; Banqueri, J.; Carvail, M.A. Sens. Actuators A. 2016, 252, 67. doi: 10.1016/j.sna.2016.11.007
- Baliga, B.J. IEEE Spectrum. 1981, 18, 42. doi: 10.1109/MSPEC.1981.6369702
- Pejovic, M.M. IEEE Trans. Nucl. Sci. 2015, 62, 1905. doi: 10.1109/TNS.2015.2456211
- Pejovic, A.M.; Pejovic, S.M. Appl. Radiat. Isotopes 2018, 132, 1. doi: 10.1016/j.apradiso.2017.11.001
- Sze, S.M. Physics of Semiconductor Devices; Wiley: New York, 1981.
- Pejovic, M.M. Radiat. Phys. Chem. 2017, 130, 221. doi: 10.1016/j.radphyschem.2016.08.027
- Wang, C.T. Hot Carrier Design Considerations for MOS Devices and Circuits; Von Nostrand Reinhold: New York, 1992.
- McWhorter, J.P.; Winokur, P.S. Appl. Phys. Lett. 1986, 48, 133. doi: 10.1063/1.96974
- Elliot, A.B. Solid-State Electron. 1976, 19, 241. doi: 10.1016/0038-1101(76)90169-6
- Groeseneken, G.; Maes, H.E.; Baltran, N.; De Keersmaeker, R.F. IEEE Trans. Electron Dev. 1984, 31, 24. doi: 10.1109/T-ED.1984.21472
- Ristic, G.S. J. Phys. D: Appl. Phys. 2008, 41, 02300. doi: 10.1088/0022-3727/41/2/023001
- Trombeta, L.P.; Feigh, F.J.; Zeto, R.J. J. Appl. Phys. 1991, 69, 2512. doi: 10.1063/1.348689
- Conley, J.F.; Lenahan, P.M. IEEE Trans. Nucl. Sci. 1995, 42, 1744. doi: 10.1109/23.488774
- Fleetwood, D.M.; Waren, W.L.; Schwank, J.R.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C. IEEE Trans. Nucl. Sci. 1995, 42, 1698. doi: 10.1109/23.488768
- Griscom, D.L. J. Appl. Phys. 1985, 58, 2524. doi: 10.1063/1.335931
- Jaksic, A.; Ristic, G.; Pejovic, M. Phys. Status Sol. (a) 1996, 155, 371. doi: 10.1002/pssa.2211550210
- Griscom, D.L. J. Ceram. Soc. Japan 1991, 99, 924. doi: 10.2109/jcersj.99.923
- Ristic, G.S.; Pejovic, M.M.; Jaksic, A.B. Appl. Surf. Sci. 2006, 252, 3023. doi: 10.1016/j.apsusc.2005.05.005
- Ristic, G.S.; Pejovic, M.M.; Jaksic, A.B. J. Non-Crystall. Solids 2007, 353, 170. doi: 10.1016/j.jnoncrysol.2006.09.020
- Lai, S.K. Appl. Phys. Lett. 1981, 39, 58. doi: 10.1063/1.92514
- Lai, S.K. J. Appl. Phys. 1983, 54, 2540. doi: 10.1063/1.332323
- Wang, S.J.; Sung, J.M.; Lyion, S.A. Appl. Phys. Lett. 1988, 52, 1431. doi: 10.1063/1.99690
- McLean, F.B. IEEE Trans. Nucl. Sci. 1980, 27, 1651. doi: 10.1109/TNS.1980.4331084
- Saks, N.S.; Dosier, C.M.; Brown, D.B. IEEE Trans. Nucl. Sci. 1988, 35, 1168. doi: 10.1109/23.25435
- Saks, N.S.; Brown, D.B. IEEE Trans. Nucl. Sci. 1989, 36, 1848. doi: 10.1109/23.45378
- Griskom, DL.; Brown, DB.; Saks, NS. Nature of Radiation-induced Points Defects in Amorphous SiO2 and their Role in SiO2 on Si Structures. In The Physics and Chemistry of SiO2 and Si-SiO2 interface; Holms C.R., and Deal B.E., Eds.; Plenum: New York, 1988.
- Pejovic, M.M.; Pejovic, M.M.; Jaksic, A.B. Nucl. Technol. Radiat. Protect. 2011, 26, 25. doi: 10.2298/NTRP1103261P
- Schwank, J.R.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S. IEEE Electron Dev. Lett. 1992, 13, 203. doi: 10.1109/55.145021
- Pejovic, M.; Ristic, G. Solid-State Electron. 1997, 41, 521. doi: 10.1016/S0038-1101(96)00252-3
- Ristic, G.; Pejovic, M.; Jaksic, A. J. Appl. Phys. 1998, 83, 2994. doi: 10.1063/1.367055
- Helms, C.R.; Poindexter, E.H. Rep. Prog. Phys. 1994, 57, 791. doi: 10.1088/0034-4885/57/8/002