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Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 174, 2019 - Issue 7-8
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Articles

Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation

Jinghao ZhaoThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, China;The University of Chinese Academy of Sciences, Beijing, ChinaORCID Iconhttps://orcid.org/0000-0001-9631-8168View further author information
ORCID Icon,
Hang ZhouThe Microsystem and Terahertz Research Center & Institute of Electronic Engineering, China Academic of Engineering Physics, Mianyang, ChinaView further author information
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Jiangwei CuiThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, ChinaView further author information
,
Qiwen ZhengThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, ChinaView further author information
,
Ying WeiThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, ChinaView further author information
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Shanxue XiThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, China;The University of Chinese Academy of Sciences, Beijing, ChinaView further author information
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Xuefeng YuThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, ChinaCorrespondence[email protected]
View further author information
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Qi GuoThe Key Laboratory of Functional Material and Devices for Special Environment, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, ChinaView further author information
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Pages 606-616 | Received 26 Jul 2018, Accepted 13 May 2019, Published online: 23 Jun 2019

References

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