Advanced search
Publication Cover
Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 174, 2019 - Issue 7-8
Submit an article Journal homepage
73
Views
4
CrossRef citations to date
0
Altmetric
Articles

Impact of proton irradiation with different fluences on the characteristics of InP/InGaAs heterostructure

Xiaohong ZhaoSchool of Microelectronics, Xidian University, The State Key Laboratory of Wide Band-gap Semiconductor Technologies, Xi’an, People’s Republic of ChinaView further author information
,
Hongliang LuSchool of Microelectronics, Xidian University, The State Key Laboratory of Wide Band-gap Semiconductor Technologies, Xi’an, People’s Republic of ChinaCorrespondence[email protected]
View further author information
,
Yuming ZhangSchool of Microelectronics, Xidian University, The State Key Laboratory of Wide Band-gap Semiconductor Technologies, Xi’an, People’s Republic of ChinaView further author information
&
Yimen ZhangSchool of Microelectronics, Xidian University, The State Key Laboratory of Wide Band-gap Semiconductor Technologies, Xi’an, People’s Republic of ChinaView further author information
Pages 697-707 | Received 30 Jul 2018, Accepted 10 Jul 2019, Published online: 26 Jul 2019

References

  • Ryzhii M, Satou A, Otsuji T, Eds.; Fundamental and Applied Problems of Terahertz Devices and Technologies; Selected Papers from the Russia-Japan-USA-Europe Symposium (RJUSE-TeraTech 2016) (Vol. 58); World Scientific, 2017.
  • Cressler, J.D. IEEE Trans. Nucl. Sci. 2013, 60 (3), 1992–2014.
  • Dawes, W.R. Hardening Semiconductor Components Against Radiation and Temperature; William Andrew: Norwich, NY, 1989.
  • Vuppala, S.; Li, C.S.; Zwicknagl, P.; Subramanian, S. IEEE Trans. Nucl. Sci. 2003, 50 (6), 1846–1851.
  • Mawby, P.A.; Pérez-Tomás, A.; Jennings, M.R.; Davis, M.; Covington, J.A.; Shah, V.; Grasby, T. In Molecular Beam Epitaxy Si/4H-SiC Heterostructure Diodes, Physics of Semiconductor Devices, 2007, International Workshop on IWPSD 2007, IEEE, 2007: 775–780.
  • Zhong, C.L.; Yao, R.H.; Geng, K.W. IEEE Trans. Electron Devices 2014, 61 (2), 394–399.
  • Li, C.H.; Lu, H.L.; Zhang, Y.M.; Liu, M.; Zhao, X.H. IEEE Trans. Nucl. Sci. 2015, 62 (3), 1336–1340.
  • Li, C.; Lu, H.; Zhang, Y.; Zhang, Y.; Liu, M. In The Influence of Proton Irradiation on the Interface States in InP/InGaAs Heterostructure Structure, 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, IEEE, 2014: 1–3.
  • Zhao, X.H.; Lu, H.L.; Zhang, Y.M.; Hao, M.R. In The Effect of Proton Irradiation on the Characteristics of InP/InGaAs Heterostructure, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016, IEEE, 2016: 1062–1064.
  • Sze, S.M.; Ng, K.K. Physics of Semiconductor Devices; John wiley & sons: Canada, 2006.
  • Mcafee, S.R.; Capasso, F.; Lang, D.V.; Hutchinson, A.; Bonner, W.A. J. Appl. Phys. 1981, 52 (10), 6158–6164.
  • Tapster, P.R. J. Cryst. Growth 1983, 64 (1), 200–205.
  • Suski, J.; Bourgoin, J.C.; Lim, H. J. Appl. Phys. 1983, 54 (5), 2852–2854.
  • Ohyama, H.; Vanhellemont, J.; Takami, Y.; Kudou, T.; Sunaga, H. Radiat. Phys. Chem. 1998, 53, 597–602.
  • Ogura, M.; Mizuta, M.; Onaka, K.; Kukimoto, H. Jpn. J. Appl. Phys. 1983, 22 (22), 1502–1509.
  • Forrest, S.R.; Kim, O.K. J. Appl. Phys. 1982, 53 (8), 5738–5745.
  • Dansas, P.; Pascal, D.; Bru, C.; Laval, S.; Giraudet, L.; Allovon, M. J. Appl. Phys. 1990, 67 (3), 1384–1388.
  • Wang, C.; Simoen, E.; Alireza, A.; Sioncke, S.; Collaert, N.; Claeys, C.; Li, W. In Deep Level Investigation of INGAAS on INP Layer, Semiconductor Technology International Conference, IEEE, 2017: 1–4.
  • Kılıçoğlu, T.; Aydın, M.E.; Topal, G.; Ebeoğlu, M.A.; Sayğılı, H. Synth. Met. 2007, 157 (13), 540–545.
  • Kaya, A.; Tecimer, H.; Vural, Ö.; Taşdemir, İ.H.; Altındal, Ş. IEEE Transactions On Electron Devices 2014, 61 (2), 584–590.
  • Krupanidhi, S.B.; Srivastava, R.K.; Srinivas, K.; Bhattacharya, D.K.; Mansingh, A. J. Appl. Phys. 1983, 54 (3), 1383–1389.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.