Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET

References

• MIL-STD-750: Test Methods for Semiconductor Devices: TM1080: Single-Event Burnout and Single-Event Gate Rupture, Nov 2019.
   Google Scholar
• Witulski, A.F.; Ball, D.R.; Galloway, K.F.; Javanainen, A.; Lauenstein, J.-M.; Sternberg, A.L.; Schrimpf, R.D. Single-Event Burnout Mechanisms in SiC Power MOSFETs. IEEE Trans. Nucl. Sci. 2018, 65 (8), 1951–1955.
   Web of Science ®Google Scholar
• Mizuta, E.; Kuboyama, S.; Abe, H.; Iwata, Y.; Tamura, T. Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs. IEEE Trans. Nucl. Sci. 2014, 61 (4), 1924–1928.
   Web of Science ®Google Scholar
• Zhou, X.T., Jia, Y.P.; Hu, D.Q.; Wu, Y. A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility. IEEE Trans. Electron Devices. 2019, 66 (6), 2551–2556.
   Web of Science ®Google Scholar
• Lauenstein, J-M.; Goldsman, N.; Liu, S.; Titus, J.L.; Ladbury, R.L.; Kim, H.S.; Phan, A.M.; LaBel, K.A.; Zafrani, M.; Sherman, P. Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs. IEEE Trans. Nucl. Sci. 2011, 58 (6), 2628–2636.
   Web of Science ®Google Scholar
• Peyre, D.; Poivey, C.; Binois, C.; Mangeret, R.; Salvaterra; G.; Beaumel, M.; Pontoni, F.; Bouchet, T.; Pater, L.; Bezerra, F.; Ecoffet, R.; Lorfevre, E.; Sturesson, F.; Berger, G.; Foy, J.C.; Piquet, B. SEGR Study on Power MOSFETs: Multiple Impacts Assumption. IEEE Trans. Nucl. Sci. 2008, 55 (4), 2181-2187.
   Web of Science ®Google Scholar
• Titus, J.L. An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs. IEEE Trans. Nucl. Sci. 2013, 60 (3), 1912-1928.
   Web of Science ®Google Scholar
• Scheick, L. Testing Guideline for Single Event Gate Rupture (SEGR) of Power MOSFETs, JPL, 2008.
   Google Scholar
• Titus, J.L.; Wheatley, C.F.; Burton, D.I.; Mouret, I.; Allenspach, M.; Brews, J.; Schrimpf, R.; Galloway, K.; Pease, R.L. Impact of Oxide Thickness on SEGR Failure in Vertical PowerMOSFETs; Development of a Semi-Empirical Expression. IEEE Trans. Nucl. Sci. 1995, 42 (6), 1928-1934.
   Web of Science ®Google Scholar
• Titus, J.L.; Wheatley, C.F.; Van Tyne, K.M.; Krieg, J.F.; Burton, D.I.; Campbell, A.B. Effect of ion Energy upon Dielectric Breakdown of the Capacitor Response in Vertical Power MOSFETs. IEEE Trans. Nucl. Sci. 1998, 45 (6), 2492-2499.
   Web of Science ®Google Scholar
• Wheatley, C.F.; Titus, J.L.; Burton, D.I. Single-Event Gate Rupture in Vertical Power MOSFETs - an Original Empirical Expression. IEEE Trans. Nucl. Sci. 1994, 41 (6), 2152–2159.
   Web of Science ®Google Scholar
• Allenspach, M.; Brews, J.R.; Mouret, I.; Schrimpf, R.D.; Galloway, K.F. Evaluation of SEGR Threshold in Power MOSFETs. IEEE Trans. Nucl. Sci. 1994, 41 (6), 2160-2166.
   Web of Science ®Google Scholar
• Lauenstein, J-M.; Casey, M.C.; Ladbury, R.L.; Kim, H.S.; Phan, A.M.; Topper, A.D. Space Radiation Effects on SiC Power Device Reliability. 2021 IEEE International Reliability Physics Symposium (IRPS), pp. 1–8. 2021.
   Google Scholar
• Liu, G.; Tuttle, B.R.; Dhar, S. Silicon Carbide: A Unique Platform for Metal-Oxide-Semiconductor Physics. Applied Physics Reviews. 2015, 2 (2).
   Web of Science ®Google Scholar
• Krishnaswami, S.; Ryu, S.H.; Heath, B. et al. Reliability of High Voltage 4H-SiC MOSFET Devices. Silicon Carbide 2006 - Materials, Processing And Devices. 2006, 911, 0911-B13-01.
   Google Scholar
• Chbili, Z.; Cheung, K.P.; Campbell, J.P. et al. Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors. presented at the Materials Science Forum. 2016.
   Google Scholar
• Lichtenwalner, D.J.; Hull, B.; Brunt, E.V. et al. Reliability Studies of SiC Vertical Power MOSFETs. presented at the 2018 IEEE International Reliability Physics Symposium (IRPS). 2018.
   Google Scholar
• Abbate, C.; Busatto, G.; Tedesco, D.; Sanseverino, A.; Silvestrin, L.; Velardi, F.; Wyss, J. Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part I. IEEE Trans. Electron Devices. 2019, 66 (10), 4235–4242.
   Google Scholar
• Martinella, C.; Ziemann, T.; Stark, R.; Tsibizov, A.; Voss, K.O.; Alia, R.G.; Kadi, Y.; Grossner, U.; Javanainen, A. Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs. IEEE Trans. Nucl. Sci. 2020, 67 (7), 1381–1389.
   Web of Science ®Google Scholar
• Busatto, G.; Di Pasquale, A.; Marciano, D.; Palazzo, S.; Sanseverino, A.; Velardi, F. Physical Mechanisms for Gate Damage Induced by Heavy Ions in SiC Power MOSFET. Microelectron. Reliab. 2020, 114, 113903.
   Web of Science ®Google Scholar
• Akturk, A.; McGarrity, J.M.; Potbhare, S.; Goldsman, N. Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs. IEEE Trans. Nucl. Sci. 2012, 59 (6), 3258–3264.
   Web of Science ®Google Scholar
• Abbate, C.; Busatto, G.; Mattiazzo, S.; Sanseverino, A.; Silvestrin, L.; Tedesco, D.; Velardi, F. Progressive Drain Damage in SiC Power MOSFETs Exposed to Ionizing Radiation. Microelectron. Reliab. 2018, 88-90, 941–945.
   Web of Science ®Google Scholar
• Titus, J.L.; Wheatley, C.F. Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFET's. IEEE Trans. Nucl. Sci. 1996, 43 (2), 533–545.
   Web of Science ®Google Scholar
• Anderson, S.R.; Schrimpf, R.D.; Galloway, K.F. et al. Exploration of Heavy-Ion Irradiation Effects on Gate Oxide Reliability in Power MOSFETs. Microelectron. Reliab. 1995, 35 (3), 603–608.
   Web of Science ®Google Scholar
• McPherson, J.W. Time Dependent Dielectric Breakdown Physics - Models Revisited. Microelectron. Reliab. 2012, 52 (9-10), 1753–1760.
   Web of Science ®Google Scholar