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Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 156, 2001 - Issue 1-4
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14. Nitride compounds

Density of electron state (DOS) distribution in AlN films near the Fermi level position as measured by SCLC and DLTS

V. Ligatchev School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798
,
S. F. Yoon School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798
,
S. Zhgoon Moscow Power Engineering Institute, Krasnokazamennaya St. 14, Moscow, 111250, Russia
,
Q. Zhang School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798
,
J. Ahn School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798
&
Rusli School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798
Pages 249-253 | Received 07 Apr 2000, Published online: 19 Aug 2006

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  • Ligatchev , V. A. , Yoon , S. F. , Ahn. , J. , Zhang and Rusli , Q. Rad. Eff. Defects in Solids , accepted
  • Tansley , T. L. and Egan , R. J. 1992 . Phys. Rev. , B45 : 10942

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