Electrochemical Mechanical Polishing of Copper with High Permittivity Abrasives

REFERENCES

• Parshuram , B.Z. ; Ashok , K. ; Sikder , A.K. Chemical mechanical planarization for microelectronics applications . Materials Science and Engineering 2004 , R45 , 89 – 220 .
   Google Scholar
• Mahadevaiyer , K. ; Jakub , W.N. ; Lee , M.C. Chemical mechanical planarization: slurry chemistry, materials, and mechanisms . Chemical Reviews 2010 , 110 , 178 – 204 .
   PubMedGoogle Scholar
• Zhong , Z.W. Recent advances in polishing of advanced materials . Materials and Manufacturing Processes 2008 , 23 ( 5 ), 449 – 456 .
   Web of Science ®Google Scholar
• Tsai , H. ; Huang , P.Y. ; Tsai , H.C. ; Chiu , S.J. Chemical Mechanical polishing in elastic contact and partial hydrodynamic lubrication: modeling and experiments . Materials and Manufacturing Processes 2011 , 26 ( 2 ), 319 – 324 .
   Web of Science ®Google Scholar
• Tsai , M. ; Peng , J. Investigation of a novel diamond disk's effect on pad topography in oxide chemical mechanical polishing . Materials and Manufacturing Processes 2010 , 25 ( 12 ), 1440 – 1448 .
   Web of Science ®Google Scholar
• Pandija , S. ; Roy , D. ; Babu , S.V. Achievement of high planarization efficiency in CMP of copper at a reduced down pressure . Microelectronic Engineering 2009 , 86 , 367 – 373 .
   Web of Science ®Google Scholar
• Dubois , C. ; Sylvestre , A. ; Chaabouni , H. ; Farcy , A. Impact of the CMP process on the electrical properties of ultra low k porous SiOCH. Microelectronic Engineering 2010, 87 (3), 333–336.
   Web of Science ®Google Scholar
• Izumitani , J. ; Kodama , D. ; Kido , S. ; Chibahara , H. ; Oka , Y. ; Goto , K. ; Suzumura , N. ; Fujisawa , M. ; Miyatake , H. Cu dual- damascene interconnects with direct chemical mechanical polishing process on porous low-k film . Japanese Journal of Applied Physics , 2010 , 49 , 05FC02(1-4) .
   Google Scholar
• Suni , I.I. ; Du , B. Cu planarization for ULSI processing by electrochemical methods: A review . Semiconductor Manufacturing 2005 , 18 , 341 – 349 .
   Web of Science ®Google Scholar
• Jia , R. ; Wang , Y. ; Wang , Z.; Tsai S. Development of electrochemical mechanical polishing for advanced copper planarization . ECS Transactions 2006 , 1 , 125 – 133 .
   Google Scholar
• Liu , F.Q. ; Chen , L. ; Duboust , A.; Tsai S. Cu planarization in electrochemical mechanical planarization . Journal of the Electrochemical Society 2006 , 153 , C377 – C381 .
   Google Scholar
• Goonetilleke , P.C. ; Roy , D. Relative roles of acetic acid, dodecyl sulfate and benzotriazole in chemical mechanical and electrochemical mechanical planarization of copper . Applied Surface Science 2008 , 254 , 2696 – 2707 .
   Web of Science ®Google Scholar
• Kung , T.M. ; Liu , C.P. ; Chang , S.C. ; Chen , K.W. ; Wang , Y.L. Effect of Cu-Ion concentration in concentrated H3PO4 electrolyte on Cu electrochemical mechanical planarization . Journal of the Electrochemical Society 2010 , 157 ( 7 ), H763 – H770 .
   Google Scholar
• Kim , B.S. ; Beaudoin , S.P. Electrochemical analysis of surface films on copper in phosphoric acid, with a focus on planarization . Journal of the Electrochemical Society 2009 , 156 ( 5 ), H390 – H395 .
   Google Scholar
• Shattuck K.G. ; West , A.C. An investigation of phosphate based ECMP electrolyte performance on feature scale planarization . Journal of Applied Electrochemistry 2009 , 39 , 1719 – 1724 .
   Google Scholar
• Doi , T. Study on E-CMP of Cu and its mechanism . Report of the Center for Cooperative Research, Saitama University, 2006 , 7 , 20 – 23 .
   Google Scholar
• Jin , Y.K. ; Hyun , S.J. ; Jung , H.N. ; Jeong , R.K. ; Kug , S.H. Influence of anatase-rutile phase transformation on dielectric properties of sol-gel derived TiO2 thin films . Journal of Electroceramics 2006 , 16 , 447 – 451 .
   Web of Science ®Google Scholar
• Robertson , J. High dielectric constant oxides . The European Physics Journal-Applied Physics 2004 , 28 , 265 – 291 .
   Web of Science ®Google Scholar
• Samsonov , G.V. Handbook of the Physicochemical Properties of the Elements ; Plenum : New York , 1968 .
   Google Scholar
• Zhijian , F. ; Xinzhong , L. ; Tiancheng , W. Electrochemical Machining and Composite Electrochemical Machining ; National Defense Industrial Press: Beijing , 2008 .
   Google Scholar
• Hong , Y. University Physics 2008 , 135 – 182 .
   Google Scholar
• Tripathi , A. ; Suni , I.I. , Li , Y.Z. ; Doniat , F. , McAndrew , J. Cu electrochemical mechanical planarization surface quality . Journal of the Electrochemical Society 2009 , 156 ( 7 ), H555 – H560 .
   Google Scholar
• Fukuda , A. ; Kodera , A. ; Toma , Y. ; Suzuki , T. ; Hiyama , H. ; Doi , T. ; Kurokawa , S. ; Ohnishi , O. Removal rate simulation of dissolution-type electrochemical mechanical polishing . Japanese Journal of Applied Physics 2010 , 49 , 076701(1-8) .
   Google Scholar
• Jeong , S. ; Lee , S. ; Jeong , H. Effect of polishing pad with holes in electro-chemical mechanical planarization . Microelectronic Engineering 2008 , 85 , 2236 – 2242 .
   Web of Science ®Google Scholar
• Hong , Y. ; Roy , D. ; Babu , S.V. Ammonium dodecyl sulfate as a potential corrosion inhibitor surfactant for electrochemical mechanical planarization of copper . Electrochemical and Solid-State Letters 2005 , 8 , 297 – 300 .
   Google Scholar
• Klug , B.K. ; Pettit , C.M. ; Pandija , S. ; Babu , S.V. ; Roy , D. Investigation of dissolution inhibitors for electrochemical mechanical planarization of copper using beta-alanine as a complexing agent . Journal of Applied Electrochemistry 2008 , 38 , 1347 – 1356 .
   Web of Science ®Google Scholar
• Goonetilleke , P.C. ; Babu , S.V. ; Roy , D. Voltage-induced material removal for electrochemical mechanical planarization of copper in electrolytes containing , glycine, and H2O2 . Electrochemical and Solid-State Letters 2005 , 8 ( 8 ), G190 – G193 .
   Google Scholar
• Lowalekar , V.P. Oxalic acid based chemical systems for electrochemical mechanical planarization of copper. D.S. thesis, The University of Arizona, Tucson, AZ, 2006.
   Google Scholar