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Integrated Ferroelectrics

An International Journal

Volume 40, 2001 - Issue 1-5

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Original Articles

A nonvolatile single ferro fet memory concept with disturbance free operation scheme

Marc Ullmann Institute of Electronics, University of the Federal Armed Forces, D-22043, Hamburg, Germany

Thomas Haneder Infineon Technologies AG, Corporate Research, D-81730, Munich, Germany

Wolfgang Hoenlein Infineon Technologies AG, Corporate Research, D-81730, Munich, Germany

Holger Goebel Institute of Electronics, University of the Federal Armed Forces, D-22043, Hamburg, Germany

Pages 23-29 | Received 14 Mar 2001, Published online: 19 Aug 2006

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https://doi.org/10.1080/10584580108010826

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Ullmann , M. , Goebel , H. , Hoenigschmid , H. and Haneder , T. 2001 . Integrated Ferroelectrics , 34 : 37
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Iwata , Yoshihisa . 1995 . IEEE Journal of Solid-State Circuits , 30 ( 11 ) : 1157
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Scott , J. F. 2000 . Ferroelectric Memories , Springer .
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Ullmann , M. , Goebel , H. , Hoenigschmid , H. and Haneder , T. 2000 . IEICE special issue on technology CAD selected from SISPAD'99 , : 1324 – 1330 .
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