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Integrated Ferroelectrics
An International Journal
Volume 40, 2001 - Issue 1-5
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Original Articles

Epitaxial structure SrBi2Ta2O9<116> /SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001> for ferroelectric-gate FET memory

S. Migita National Institute of Advanced Industrial Science and Technology, 1–1–1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
,
K. Sakamaki National Institute of Advanced Industrial Science and Technology, 1–1–1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan; Nippon Precision Circuits. Inc., 523-1 Shimotano, Tochigi, 329-2811, Japan
,
H. Ota National Institute of Advanced Industrial Science and Technology, 1–1–1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
,
S.-B. Xiong National Institute of Advanced Industrial Science and Technology, 1–1–1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
,
Y. Tarui National Institute of Advanced Industrial Science and Technology, 1–1–1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
&
S. Sakai National Institute of Advanced Industrial Science and Technology, 1–1–1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Pages 135-143 | Received 14 Mar 2001, Published online: 19 Aug 2006

References

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