REFERENCES
- Sugibuchi , K. , Kurogi , Y. and Endo , N. 1975 . “Ferroelectric field-effect memory device using Bi4Ti3O12 film,” . J. Appl. Phys. , 46 : 2877 – 2881 .
- Hirai , T. , Teramoto , K. , Nishi , T. , Goto , T. and Tarui , Y. 1994 . “Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a CeO2 buffer layer,” . Jpn. J. Appl. Phys. , 33 : 5219 – 5222 .
- Tocumitsu , E. , Itani , K. , Moon , B. and Ishiwara , H. 1995 . “Crystalline quality and electrical properties of PbZrxTi1 - xO3 thin films prepared on SrTiO3-covered Si substrates,” . Jpn. J. Appl. Phys. , 34 : 5202 – 5206 .
- Kim , W. S. , Ha , S. M. , Yang , J. K. and Park , H. H. 2001 . “Ferroelectric-gate field effect transistors using Nd2Ti2O7/Y2O3/Si structures,” . Thin Solid Films , 398/399 : 663 – 667 .
- Lee , B. H. , Kang , L. , Nieh , R. , Qi , W. J. and Lee , J. 2000 . “Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing,” . Appl. Phys. Lett. , 76 : 1926 – 1928 .
- Kang , L. , Lee , B. H. , Qi , W. J. , Jeon , Y. , Nieh , R. , Gopalan , S. , Onishi , K. and Lee , J. 2000 . “Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric,” . IEEE Electron Device Lett. , 21 : 181 – 183 .
- Wang , S. J. , Lim , P. C. and Huan , A. C. H. 2003 . “Reaction of SiO2 with hafnium oxide in low oxygen pressure,” . Appl. Phys. Lett. , 82 : 2047 – 2049 .
- Wilk , G. D. , Wallace , R. M. and Anthony , J. M. 2000 . “Hafnium and zirconium silicates for advanced gate dielectrics,” . J. Appl. Phys. , 87 : 484 – 492 .
- Briggs , D. and Seah , M. P. “Practical surface analysis,” , Vol. 1 , New York : Wiley .
- Bender , S. , Franke , R. , Hartmann , E. , Lansmann , V. , Jansen , M. and Hormes , J. 2002 . “X-ray absorption and photoemission electron spectroscopic investigation of crystalline and amorphous barium silicates,” . J. Non-Crystalline Solids , 298 : 99 – 108 .
- Chiu , F. C. , Wang , J. J. , Lee , J. Y. and Wu , S. C. 1997 . “Leakage currents in amorphous Ta2O5 thin films,” . J. Appl. Phys. , 81 : 6911 – 6915 .
- Dimoulas , A. , Vellianitis , G. and Travlos , A. 2002 . “Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters,” . J. Appl. Phys. , 92 : 426 – 431 .
- Lee , S. J. , Jeon , T. S. and Kwong , D. L. 2002 . “Hafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectrics,” . J. Appl. Phys. , 92 : 2807 – 2809 .