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Integrated Ferroelectrics
An International Journal
Volume 75, 2005 - Issue 1
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SECTION E: FeRAM MATERIALS AND DEVICES

THE EFFECT OF THE DEPOSITION CONDITION OF THE PbO BUFFER LAYER ON THE INTERFACIAL CONDITION OF Pb1.1Zr0.53Ti0.47O3/PbO/Si STRUCTURES

CHUL-HO PARK School of Inorganic Materials Science & Engineering, Pusan National University, Busan, 609-735, Korea
,
YOUNG-HUN OH School of Inorganic Materials Science & Engineering, Pusan National University, Busan, 609-735, Korea
,
MI-SOOK WON Busan Center, Korea Basic Science Institute, Busan, 609-735, Korea
&
YOUNG-GOOK SON School of Inorganic Materials Science & Engineering, Pusan National University, Busan, 609-735, Korea
Pages 147-154 | Received 17 Apr 2005, Published online: 15 Aug 2006

REFERENCES

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  • Lee , H. N. , Lim , M. H. , Kim , Y. T. , Kalkur , T. S. and Choh , S. H. 1988 . Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistors Using a Pt/SrBi2Ta2O9/Y2O3/Si Structure . J. Appl. Phys. , 37 : 1107 [CSA]
  • Jung , W. S. , Park , C. H. and Son , Y. G. 2003 . The Heat Treatment Effect of ZrO2 Buffer Layer on the Electrical Properties of Pt/SrBi2Ta2O9/ZrO2/Si Structure . J. Kor. Ceram. Soc. , 40 ( 1 ) : 52 – 61 . [CSA]
  • Kim , Y. T. and Sin , D. S. 1997 . Direct Observation of Si Lattice Strain and Its Distribution in the Si(001)-SiO2 Interface Transition Layer . Appl. Phys. Lett. , 71 : 3507 [CSA] [CROSSREF]
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  • Liu , M. and Kim , H. K. 2002 . Blachere. Lead-Zirconate-Titanate-Based Metal/Ferroelectric/Insulator/Semiconductor Structure for Nonvolatle Memories . J. Appl. Phys. , 91 : 5985 [CSA] [CROSSREF]
  • Koritala , R. E. , Lanagan , M. T. , Chen , N. , Bai , G. R. , Huang , Y. and Streiffer , S. K. 2005 . Microstructure and Properties of PbZr0.6Ti0.4O3 and PbZrO3 Thin Films Deposited on Template Layers . J. Mater. Res. , 15 : 1962 [CSA]

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