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Integrated Ferroelectrics

An International Journal

Volume 85, 2006 - Issue 1

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SECTION C: FeRAM MATERIALS: MATERIALS CHARACTERIZATION

FERROELECTRIC PROPERTIES OF Zr-DOPED Bi_3.15ND_0.85Ti₃O₁₂ THIN FILM DEPOSITED BY A SOL-GEL METHOD

JUN YU Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China

JIA LI Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China

YUNBO WANG Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China

GANG PENG Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China

DONGYUN GUO Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China

Pages 77-83 | Received 31 May 2006, Published online: 14 Feb 2007

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https://doi.org/10.1080/10584580601085693

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FERROELECTRIC PROPERTIES OF Zr-DOPED Bi_3.15ND_0.85Ti₃O₁₂ THIN FILM DEPOSITED BY A SOL-GEL METHOD

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FERROELECTRIC PROPERTIES OF Zr-DOPED Bi3.15ND0.85Ti3O12 THIN FILM DEPOSITED BY A SOL-GEL METHOD

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FERROELECTRIC PROPERTIES OF Zr-DOPED Bi_3.15ND_0.85Ti₃O₁₂ THIN FILM DEPOSITED BY A SOL-GEL METHOD