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Integrated Ferroelectrics
An International Journal
Volume 88, 2007 - Issue 1
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SECTION I: MEMS, PYROELECTRIC/IR, OPTOELECTRONIC MATERIALS: THIN-FILM PROCESSING

EFFECTS OF DEPOSITION PARAMETERS AND FILM THICKNESS ON THE PHASES AND ELECTRICAL PROPERTIES OF Pb(Mg1/3Nb2/3)O3 THIN FILMS MADE BY MOCVD USING ULTRASONIC NEBULIZATION

CHOON-HO LEE Department of Materials Engineering, Keimyung University, #1000 Shindang-Dong, Dalseo-Gu, Daegu, 704-701, Korea
&
KWANG-PYO KIM Department of Materials Engineering, Keimyung University, #1000 Shindang-Dong, Dalseo-Gu, Daegu, 704-701, Korea
Pages 68-75 | Received 31 May 2006, Published online: 12 Oct 2011

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  • Jiang , M. C. , Hong , T. J. and Wu , T. B. 1994 . “Deposition and Characterization of Ferroelectric Pb[(Mg1/3Nb2/3)xTi1-x]O3 Thin Films by RF Magnetron Sputtering,” . Jpn. J. Appl. Phys. , 33 : 6301 – 6307 .
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  • Lee , C. H. and Kim , S. I. 2003 . “Effect of Zr/Ti Ratio on the Properties of PZT Thin Films made by MOCVD Using Utrasonic Nebulization,” . Integrated Ferroelectrics , 52 : 147 – 151 .

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