STABILITY AND MAGNITUDE OF PHOTOVOLTAGE IN FERROELECTRIC (Pb_0.97La_0.03)(Zr_0.52Ti_0.48)O₃ THIN FILMS IN MULTI-CYCLE UV LIGHT ILLUMINATION

REFERENCES

• Fridkin , V. M. 1979 . Photoferroelectrics , Berlin & New York : Springer-Verlag .
   Google Scholar
• Tu , C. S. , Wang , F. T. , Chien , R. R. , Schmidt , V. H. , Hung , C. M. and Tseng , C. T. 2006 . “Dielectric and photovoltaic phenomena in tungsten-doped Pb(Mg1/3Nb2/3)1-xTixO3 crystal,” . Appl. Phys. Lett. , 88 : 032902:1 – 3 .
   Web of Science ®Google Scholar
• Glass , A. M. , von der Linde , D. and Negran , T. J. 1974 . “High-voltage bulk photovoltaic effect and the photorefractive process in LiNbO3,” . Appl. Phys. Lett. , 25 : 233 – 235 .
   Web of Science ®Google Scholar
• Brody , P. S. “Ferroelectric ceramic devices,” . United Stated Patent 4051465 . 1977 .
   Google Scholar
• Chu , S. Y. , Zhou , Y. and Uchino , K. 1994 . Impurity doping effect on photostriction in PLZT ceramics . Advanced Performance Materials , 1 : 129 – 143 .
   Google Scholar
• Poosanaas , P. , Tonooka , K. and Uchino , K. 2000 . “Photostrictive actuators,” . Mechatronics , 10 : 467 – 487 .
   Web of Science ®Google Scholar
• Pintilie , L. , Alexe , M. , Pignolet , A. and Hesse , D. 1998 . “Bi4Ti3O12 ferroelectric thin film ultraviolet detector,” . Appl. Phys. Lett. , 73 : 342 – 344 .
   Web of Science ®Google Scholar
• Pintilie , L. and Pintilie , I. 2001 . “Ferroelectrics: new wide-gap materials for UV detection,” Materials Science and Engineering . B , 80 : 388 – 391 .
   Google Scholar
• Ichiki , M. , Morikawa , Y. , Nakada , T. and Maeda , R. 2002 . Electrical properties of ferroelectric lead lanthanum zirconate titanate as an energy transducer for application to electrostatic-optical motor . Jpn. J. Appl. Phys. , 41 : 6993 – 6996 .
   Web of Science ®Google Scholar
• Suchaneck , G. and Gerlach , G. 2001 . “Ferroelectric-semiconductor UV sensors,” . Phys. Stat. Sol. (a) , 185 : 115 – 120 .
   Google Scholar
• Yarmarkin , V. K. , Gol'tsman , B. M. , Kazanin , M. M. and Lemanov , V. V. 2000 . Barrier Photovoltaic Effects in PZT Ferroelectric Thin Films . Physics of the Solid State , 42 : 522 – 527 .
   Web of Science ®Google Scholar
• Kholkin , A. L. , Yarmarkin , V. K. , Goltsman , B. M. and Baptista , J. L. 2001 . Photoelectric evaluation of polarization and internal field in PZT thin films . Integr. Ferroelectr. , 35 : 261 – 268 .
   Web of Science ®Google Scholar
• Shannigrahi , S. and Yao , K. 2005 . “Effects of WO3 dopant on the structure and electrical properties of Pb0.97La0.03(Zr0.52Ti0.84)O3 thin films,” . Appl. Phys. Lett. , 86 : 092901:1 – 3 .
   Web of Science ®Google Scholar
• Yao , K. , Gan , B. K. , Chen , M. and Shannigrahi , S. 2005 . “Large photo-induced voltage in a ferroelectric thin film with in-plane polarization,” . Appl. Phys. Lett. , 87 : 212906:1 – 3 .
   Web of Science ®Google Scholar
• Qin , M. , Yao , K. , Liang , Y. C. and Shannigrahi , S. 2007 . “Thickness effects on photoinduced current in ferroelectric (Pb0.97La0.03)(Zr0.5Ti0.48)O3 thin films,” . J. Appl. Phys. , 101 : 014104:1 – 8 .
   Web of Science ®Google Scholar
• Stolichnov , I. and Tagantsev , A. 1998 . “Space-charge influenced-injection model for conduction in Pb(ZrxTi−1)O3 thin films,” . J. Appl. Phys. , 84 : 3216 – 3225 .
   Web of Science ®Google Scholar
• Pintilie , L. and Alexe , M. 2005 . “Metal-ferroelectric-metal heterostructures with Schottky contacts. I. Influence of the ferroelectric properties,” . J. Appl. Phys. , 98 : 124103:1 – 8 .
   Web of Science ®Google Scholar
• Masuda , Y. and Nozaka , T. 2004 . “Investigation into electrical conduction mechanisms of Pb(Zr,Ti)O3 thin-film capacitors with Pt, IrO2 and SrRu3O3 top electrodes,” . Jpn. J. Appl. Phys. , 43 : 6576 – 6580 .
   Web of Science ®Google Scholar
• Scott , J. F. 2000 . Ferroelectric Memories , 97 – 98 . Berlin : Springer .
   Google Scholar
• Robertson , J. and Chen , C. W. 1999 . Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate . Appl. Phys. Lett. , 74 : 1168 – 1170 .
   Web of Science ®Google Scholar
• Scott , J. F. 1999 . Device physics of ferroelectric thin film memories . Jpn. J. Appl. Phys. , 38 : 2272 – 2274 .
   Web of Science ®Google Scholar
• Dawber , M. , Scott , J. F. and Hartmann , A. J. 2001 . Effect of donor and acceptor dopants on Schottky barrier heights and vacancy concentrations in barium strontium titanate . J. Euro. Ceram. Soc. , 21 : 1633 – 1636 .
   Web of Science ®Google Scholar
• Cowley , A. M. and Sze , S. M. 1965 . “Surface States and Barrier Height of Metal-Semiconductor Systems,” . J. Appl. Phys. , 36 : 3212 – 3220 .
   Web of Science ®Google Scholar
• Warren , W. L. and Dimos , D. 1994 . “Photoinduced hysteresis changes and charge trapping in BaTiO3 dielectrics,” . Appl. Phys. Lett. , 64 : 866 – 868 .
   Web of Science ®Google Scholar
• Baturin , I. , Menou , N. , Shur , V. , Muller , C. , Kuznetsov , D. , Hodeau , J. L. and Sternberg , A. 2005 . “Influence of irradiation on the switching behavior in PZT thin films,” . Mater. Sci. Engineering B , 120 : 141 – 145 .
   Web of Science ®Google Scholar
• Dimos , D. , Warren , W. L. , Sinclair , M. B. , Turtle , B. A. and Schwartz , R. W. 1994 . “Photoinduced hysteresis changes and optical storage in (Pb,La)(Zr,Ti)O3 thin films and ceramics,” . J. Appl. Phys. , 76 : 4305 – 4315 .
   Web of Science ®Google Scholar