Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 110, 2009 - Issue 1
84
Views
4
CrossRef citations to date
0
Altmetric
Original Articles

EVALUATION OF DIFFERENT METALORGANIC PRECURSORS FOR Ge-Sb-Te THIN FILM DEPOSITION

, , , &
Pages 87-93 | Received 01 Jun 2008, Accepted 20 Aug 2009, Published online: 19 Oct 2010

REFERENCES

  • Lacaita , A. L. 2006 . Phase change memories State-of-the-art, challenges and perspectives . Solid State Electron , 50 : 24 – 31 .
  • Raoux , S. , Burr , G. W. , Breitwisch , M. J. , Rettner , C. T. , Chen , Y. C. , Shelby , R. M. , Salinga , M. , Krebs , D. , Chen , S. H. , Lung , H. L. and Lam , C. H. 2008 . Phase-change random access memory: A scalable technology . IBM J. Res. Dev. , 52 : 465 – 479 .
  • Yeung , F. , Ahn , S. J. , Hwang , Y. N. , Jeong , C. W. , Song , Y. J. , Lee , S. Y. , Lee , S. H. , Ryoo , K. C. , Park , J. H. , Shin , J. M. , Jeong , W. C. , Kim , Y. T. , Koh , G. H. , Jeong , G. T. , Jeong , H. S. and Kim , K. 2005 . Ge2Sb2Te5 Confined Structures and Integration of 64Mb Phase-Change Random Access Memory . Jpn. J. Appl. Phys. , 44 : 2691 – 2695 .
  • Cho , W. Y. , Cho , B.-H. , Choi , B.-G. , Oh , H.-R. , Kang , S. , Kim , K.-S. , Kim , K.-H. , Kim , D.-E. , Kwak , C.-K. , Byun , H.-G. , Hwang , Y. , Ahn , S. J. , Koh , G.-H. , Jeong , G. , Jeong , H. and Kim , K. 2005 . A0.18-mm 3.0-V 64-Mb Nonvolatile Phase-Transition Random Access Memory (PRAM) . IEEE J. Solid-St. Circ. , 40 : 293 – 300 .
  • Liu , B. , Zhang , T. , Xia , J. , Song , Z. , Feng , S. and Chen , B. 2004 . Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory . Semicond. Sci. Technol. , 19 : L61 – L64 .
  • Yoon , H. R. , Jo , W. , Lee , E. H. , Kim , M. , Lee , K. Y. and Khang , Y. 2005 . Generation of phase-change Ge–Sb–Te nanoparticles by pulsed laser ablation . J. Non-Cryst. Solids. , 351 : 3430 – 3434 .
  • Morales-Sánchez , E. , Prokhorov , E. F. , González-Hernández , J. and Mendoza-Galván , A. 2005 . Structural, electric and kinetic parameters of ternary alloys of GeSbTe . Thin Solid Films , 471 : 243 – 247 .
  • Kim , R. Y. , Kim , H. G. and Yoon , S. G. 2006 . Structural properties of Ge2Sb2Te5 thin films by metal organic chemical vapor deposition for phase change memory applications . Appl. Phys. Lett. , 89 ( 1–3 ) : 102107
  • Longo , M. , Salicio , O. , Wiemer , C. , Fallica , R. , Molle , A. , Fanciulli , M. , Giesen , C. , Seitzinger , B. , Baumann , P. K. , Heuken , M. and Rushworth , S. 2008 . Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications . J. Crystal Growth , 310 : 5053 – 5057 .
  • Lee , J. , Choi , S. , Lee , C. , Kang , Y. and Kim , D. 2007 . GeSbTe deposition for the PRAM application . Appl. Surf. Sci. , 253 : 3969 – 3976 .
  • Choi , B. J. , Choi , S. , Shin , Y. C. , Hwang , C. S. , Lee , J. W. , Jeong , J. , Kim , Y. J. , Hwang , S. Y. and Hong , S. K. 2007 . Cyclic PECVD of Ge2Sb2Te5 Films using Metallorganic Sources . J. Electrochem. Soc. , 154 : H318 – H324 .
  • Abrutis , A. , Plausinaitiene , V. , Skapas , M. , Wiemer , C. , Salicio , O. , Pirovano , A. , Varesi , E. , Rushworth , S. , Gawelda , W. and Siegel , J. 2008 . Hot-Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications . Chem. Mater. , 20 : 3557 – 3559 .

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.