Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 122, 2010 - Issue 1
74
Views
1
CrossRef citations to date
0
Altmetric
Original Articles

Growth of Nanostructured Amorphous InSb by Vacuum Thermal Evaporation

, &
Pages 119-125 | Received 25 Nov 2009, Accepted 30 Apr 2010, Published online: 20 Nov 2010

References

  • Schmid , G. 2004 . Nanoparticles: From Theory to Application , Weinheim : Wiley-VCH Verlag GmbH & Co KGaA .
  • Brechignac , C. , Houdy , P. and Lahmani , M. 2006 . Nanomaterials and Nanochemistry , Paris : Springer .
  • Yoffe , A. D. 2002 . Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems . Advances in Physics , 51 : 799 – 890 . and references therein
  • Gulia , V. and Vedeshwar , A. G. 2007 . Optical properties of PbI2 films: Quantum confinement and residual stress effect . Physical Review B , 75 ( 4 ) : 045409
  • Rogach , A. L. 2008 . Semiconductor Nanocrystal Quantum Dots , New York : Springer .
  • Estes , M. J. and Moddel , G. 1996 . A model of size-dependent photoluminescence in amorphous silicon nanostructures: Comparison with observations of porous silicon . Applied Physics Letters , 68 ( 13 ) : 1814 – 1816 .
  • Allen , G. , Delerue , C. and Lannoo , M. 1997 . Electronic structure of amorphous silicon nanoclusters . Physical Review Letters , 78 ( 16 ) : 3161 – 3164 .
  • Park , N. M. , Choi , C. J. , Seong , T. Y. and Park , S. J. 2001 . Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride . Physical Review Letters , 86 ( 7 ) : 1355 – 1357 .
  • Yoon , J. W. , Shim , S. H. , Shim , K. B. , Koshizaki , N. and Kwon , Y. S. 2005 . Quantum confinement effect of amorphous GaN quantum dots prepared by pulsed-laser ablation . Japanese Journal of Applied Physics , 44 : 788 – 791 .
  • Bhatti , A. S. , Antanov , V. N. , Swaminathan , P. , Palmer , J. S. and Weaver , J. H. 2007 . Anomalous photoluminescence behavior from amorphous Ge quantum dots produced by buffer-layer-assisted growth . Applied Physics Letters , 90 ( 1 ) : 011903
  • Gao , H. , Shao , M. , Wang , S. and Fu , Y. 2009 . Wet route to silicon oxide quantum dots with fixed and strong blue emission . Journal of Material Science: Material in Electronics , 20 ( 3 ) : 202 – 205 .
  • Williams , D. W. and Carter , C. B. 2009 . Transmission Electron Microscopy , New York : Springer .
  • Shindo , D. and Oikawa , T. 2002 . Analytical Electron Microscopy for Materials Science , Tokyo : Springer-Verlag .
  • Seeger , K. 1973 . Semiconductor Physics , Berlin : Springer .
  • Mott , N. F. and Davis , E. A. 1971 . Electronic Processes in Non-Crystalline Materials , Clarendron : Oxford .
  • Tauc , J. 1974 . Amorphous and Liquid Semiconductors , London : Plenum .
  • Piprek , J. 2003 . Semiconductor Optoelectronic Devices , New York : Academic Press .
  • Ojima , T. and Adachi , S. 1997 . Optical dispersion relations in amorphous semiconductors InSb and GeSe2 . Journal Applied Physics , 82 ( 6 ) : 3105 – 3110 .

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.