Investigation on Divalent Metal Substituted Bismuth Titanate Ferroelectric Thin Films

References

• Park , B. H. , Kang , B. S. , Bu , S. D. , Noh , T. W. , Lee , J. and Jo , W. 1999 . Lanthanum-substituted bismuth titanate for use in non-volatile memories . Nature , 401 : 682 – 684 .
   Web of Science ®Google Scholar
• Aurivillius , B. 1949 . Mixed bismuth oxides with layer lattices: I. The structure type of CaNb2Bi2O9 . Ark Kemi. , 1 : 463 – 480 .
   Google Scholar
• Cummins , S. E. and Cross , L. E. 1968 . Electrical and optical properties of ferroelectric Bi4Ti3O12 single crystals . J. Appl. Phys. , 39 : 2268 – 2274 .
   Web of Science ®Google Scholar
• Scott , J. F. and Paz de Araujo , C. A. 1989 . Ferroelectric memories . Science , 246 : 1400 – 1405 .
   PubMed Web of Science ®Google Scholar
• Jeon , M. K. , Chung , H. J. , Kim , K. W. , Oh , K. S. and Woo , S. I. 2005 . Ferroelectric properties of Bi3.25Ce0.75Ti3O12 thin films prepared by a liquid source misted chemical deposition . Thin Solid Films , 489 : 1 – 4 .
   Web of Science ®Google Scholar
• Chon , U. , Shim , J. S. and Jang , H. M. 2003 . Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate . J. Appl. Phys. , 93 : 4769 – 4775 .
   Web of Science ®Google Scholar
• Chon , U. , Jang , H. M. , Kim , M. G. and Chang , C. H. 2002 . Layered perovskites with giant spontaneous polarizations for nonvolatile memories . Phys. Rev. Lett. , 89 : 087601
   PubMed Web of Science ®Google Scholar
• Tomar , M. S. , Melgarejo , R. E. and Singh , S. P. 2005 . Leakage current and ferroelectric memory in Nd and Sm substituted Bi4Ti3O12 films . Microelectron J. , 36 : 574 – 577 .
   Web of Science ®Google Scholar
• Kim , K.-T. , Kim , C.-I. , Kang , D.-H. and Shim , I.-W. 2002 . The effect of Eu substitution on the ferroelectric properties of Bi4Ti3O12 thin films prepared by metal–organic decomposition . Thin Solid Films , 422 : 230 – 234 .
   Google Scholar
• Kim , S. S. , Bae , J. C. and Kim , W.-J. 2005 . Fabrication and ferroelectric studies of (Bi, Gd)4Ti3O12 thin films grown on Pt/Ti/SiO2/Si and p-type Si substrates . J. Cryst. Growth , 274 : 394 – 401 .
   Google Scholar
• Kim , S. S. , Song , J.-S. and Kwon , S.-C. 2004 . Ferroelectric (Bi,Dy)4Ti3O12 thin films deposited on Pt(1 1 1)/Ti/SiO2/Si and p-type Si(1 0 0) substrates . J. Cryst. Growth , 271 : 90 – 98 .
   Google Scholar
• Kim , K.-T. and Kim , C.-I. 2005 . Effect of lanthanides-substituted on ferroelectric properties of bismuth titanate thin films prepared by metalorganic decomposition . Mat. Sci. Eng. B-Solid , 118 : 229 – 233 .
   Google Scholar
• So , Y. W. , Kang , B. S. , Seo , S. A. , Kim , D. J. , Noh , T. W. and Yoon , J.-G. 2002 . Effects of lanthanide dopants on the ferroelectric property of Bi4Ti3O12 thin films . Ferroelectrics , 271 : 347 – 352 .
   Google Scholar
• Shannon , R. D. 1976 . Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides . Acta Crystallogr. , A32 : 751 – 767 .
   Web of Science ®Google Scholar
• Suárez , D. Y. , Reaney , I. M. and Lee , W. E. 2001 . Relation between tolerance factor and Tc in Aurivillius compounds . J. Mater. Res. , 16 : 3139 – 3149 .
   Web of Science ®Google Scholar
• Dorrian , J. F. , Newnham , R. E. and Smith , D. K. 1971 . Crystal structure of Bi4Ti3O12 . Ferroelectrics , 3 : 17 – 27 .
   Web of Science ®Google Scholar
• Xue , K.-H. , Paz de Araujo , C. A. and Celinska , J. 2010 . A comparative study on Bi4Ti3O12 and Bi3.25La0.75Ti3O12 ferroelectric thin films derived by metal organic decomposition . J. Appl. Phys. , 107 : 104123
   Google Scholar
• Kato , K. , Suzuki , K. , Nishizawa , K. and Miki , T. 2001 . Ferroelectric properties of alkoxy-derived CaBi4Ti4O15 thin films on Pt-passivated Si . Appl. Phys. Lett. , 78 : 1119 – 1121 .
   Web of Science ®Google Scholar
• Zhang , S.-T. , Yang , B. , Chen , Y.-F. , Liu , Z.-G. , Yin , X.-B. , Wang , Y. , Wang , M. and Ming , N.-B. 2002 . SrBi4Ti4O15 thin films and their ferroelectric fatigue behaviors under varying switching pulse widths and frequencies . J. Appl. Phys. , 91 : 3160 – 3164 .
   Web of Science ®Google Scholar
• Wu , Y. , Forbess , M. J. , Seraji , S. , Limmer , S. J. , Chou , T. P. , Nguyen , C. and Cao , G. 2001 . Doping effect in layer structured SrBi2Nb2O9 ferroelectrics . J. Appl. Phys. , 90 : 5296 – 5302 .
   Web of Science ®Google Scholar
• “ In the work of Wu et al., it was discovered that Ca doping increases the Curie point of SrBi2Nb2O9 while Ba doping does the opposite. The trend of Curie point usually reflects the trend of spontaneous polarization ” .
   Google Scholar
• Scott , J. F. , Araujo , C. A. , Melnick , B. M. , McMillan , L. D. and Zuleeg , R. 1991 . Quantitative measurement of space-charge effects in lead zirconate-titanate memories . J. Appl. Phys. , 70 : 382 – 388 .
   Web of Science ®Google Scholar