The Effect of Negative Bias Voltage on Porous Silica Films Photoluminescence

References

• Canham , L. T. 1990 . Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J] . Appl. Phys. Lett. , 57 : 1046 – 1048 .
   Web of Science ®Google Scholar
• Danaie , K. , Bosseboeuf , A. , Clerc , C. , Gousset , C. and Julie , G. 2002 . Fabrication of UV-transparent SixOyNz membranes with a low frequency PECVD reactor[J] . Sens. Actuators A , 99 : 78 – 81 .
   Google Scholar
• Torrison , L. , Tolle , J. , Kouvetakis , J. , Dey , S. K. , Gu , D. , Tsong , I. S. T. and Crozier , P. A. 2003 . Stoichiometric and non-stoichiometric films in the Si-O-N system: mechanical, electrical, and dielectric properties[J] . Mater. Sci. Eng. B , 97 : 54 – 58 .
   Google Scholar
• Machorro , R. , Samano , E. C. , Soto , G. , Villa , F. and Cota-Araiza , L. 2000 . Modification of refractive index in silicon oxynitride films during deposition[J] . Mater. Lett. , 45 : 47 – 50 .
   Google Scholar
• Serenyi , M. , Racz , T. and ohner , L. 2001 . Refractive index of sputtered silicon oxynitride layers for antireflection. Coating[J] . Vacuum , 61 : 245 – 249 .
   Google Scholar
• Kim , Y. T. , Kim , D. S. and Yoon , D. H. 2005 . Deposition of TiO2 thin films using RF magnetron sputtering method and study of their surface characteristics[J] . Thin Solid Films , 475 : 271 – 274 .
   Google Scholar
• Alayo , M. I. , Pereyra , I. and Carreno , M. N. P. 1998 . Thick SiOxNy and SiO2 films obtained by PECVD technique at low temperatures[J] . Thin Solid Films , 332 : 40 – 45 .
   Google Scholar
• Delachat , F. , Carrada , M. , Ferblantier , G. , Slaoui , A. , Bonafos , C. , Schamm , S. and Rinnert , H. 2009 . Structural and optical properties of Si nanocrystals embedded in SiO2/SiNx multilayers[J] . Physica E , 41 : 994 – 997 .
   Google Scholar
• Ma , Zhongyuan , Han , Peigao , Huang , Xinfan , Sui , Yanping , Chen , San , Qian , Bo , Li , Wei , Xu , Jun , Xu , Ling , Chen , Kunji and Feng , Duan . 2006 . Enhanced green to red photoluminescence in thermally annealed of amorphous-Si:H/SiO2 multilayers[J] . Thin Solid Films , 515 : 2322 – 2325 .
   Google Scholar
• Lucovsky , G. , Yang , J. , Chao , S. S. , Tyler , J. E. and Czubatyj , W. 1983 . Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen[J] . J. Non-Cryst. Solids , 59–60 : 609 – 612 .
   Google Scholar
• Pereyra , I. and Alayo , M. I. 1997 . High quality low temperature DPECVD silicon dioxide[J] . J. Non-Cryst. Solids , 212 : 225 – 231 .
   Google Scholar
• Kenyon , A. J. , Trwoga , P. F. , Pitt , C. W. and Rehm , G. 1996 . The origin of photoluminescence from thin films of silicon rich silica[J] . J. Appl. Phys. , 79 : 9291 – 9300 .
   Google Scholar
• Ye , Chao , Ning , Zhaoyuan , Xing , Yu and Wang , Tingting . 2006 . Influence of Si—OH groups on properties and avoidance for SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma[J] . ACTA PHYSICA SINICA. , 55 : 2606 – 2607 . in Chinese
   Google Scholar
• Park , Young-Bae and Rhee , Shi-Woo . 2004 . Low temperature silicon dioxide film deposition by remote plasma enhanced chemical vapor deposition: growth mechanism[J] . Surf. Coat. Technol. , 179 : 229 – 236 .
   Google Scholar
• Matsuda , A. and Tanaka , K. 1987 . The mechanism of giant photocontrcation in obliquely-deposited thin films of amorphous germanium chalcogenides[J] . J. Non-Cryst. Solids , 97 : 1215 – 1218 .
   Google Scholar
• Prokes , S. M. 1993 . Light emission properties of porous silicon[J] . Appl. Phys. Lett. , 62 : 3244 – 3246 .
   Web of Science ®Google Scholar
• Takagi , H. , Ogawa , H. , Yamazaki , Y. , Ishizaki , A. and Nakagiri , T. 1990 . Quantum size effects on photoluminescence in ultrafine Si particles[J] . Appl. Phys. Lett. , 56 : 2379
   Web of Science ®Google Scholar