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Integrated Ferroelectrics
An International Journal
Volume 129, 2011 - Issue 1
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Original Articles

A Novel Vertical MOSFET with bMPI Structure for 1T-DRAM Applications: A 2-D Numerical Study

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Pages 59-64 | Received 09 Aug 2010, Accepted 22 Aug 2010, Published online: 17 Oct 2011

Reference

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  • Okhonin , S. , Nagoga , M. , Sallese , J. M. and Fazan , P. 2001 . A SOI Capacitor-less IT-DRAM Concept . Proc. IEEE Int. SOI Conf. , : 153 – 154 .
  • Kuo , Charles , King , Tsu-Jae and Hu , Chenming . 2002 . A Capacitorless Double-Gate DRAM Cell . IEEE Trans. Electron Devices. , 23 : 345 – 347 .
  • Lin , Jyi-Tsong and Chang , Mike . 2006 . A New 1T DRAM Cell With Enhanced Floating Body Effect . Proc. IEEE International Workshop on Memory Technology, Design, and Testing (MTDT) , 5
  • Ertosun , M. Gunhan , Cho , Hoon , Kapur , Pawan and Saraswat , Krishna C. 2008 . A nanoscale vertical double-gate single-transistor capacitorless DRAM . IEEE Electron Device Lett , 29 : 615 – 617 .
  • Chen , Cheng-Hsin , Lin , Jyi-Tsong , Eng , Yi-Chuen , Chiu , Hsien-Nan , Chang , Tzu-Feng , Fan , Yi-Hsuan , Chang , Yu-Che , Lu , Kuan-Yu and Tai , Chih-Hsuan . 2010 . “ Thermal characteristics of an advanced bMPI-based 1T-DRAM Cell ” . In Proc. 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 181 – 184 .

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