High Temperature Measurement of Elastic Moduli of (0001) Gallium Nitride

References

• Gil , B. 1998 . Group III Nitride Semiconductor Compounds: Physics and Applications , Oxford Science Publication .
   Google Scholar
• Cimalla , V. , Pezoldt , J. and Ambacher , O. 2007 . Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications . J. Phys. D Appl. Phys. , 40 ( 20 ) : 6386 – 6434 .
   Google Scholar
• Strittmatter , R. P. , Beach , R. A. Picus , G. S. 2003 . Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes . J. Appl. Phys. , 94 ( 9 ) : 5958 – 5963 .
   Web of Science ®Google Scholar
• Strittmatter , R. P. , Beach , R. A. Brooke , J. 2003 . GaN Schottky diodes for piezoelectric strain sensing . J. Appl. Phys. , 93 ( 9 ) : 5675 – 5681 .
   Google Scholar
• Filippetti , A. , Fiorentini , V. , Cappellini , G. and Bosin , A. 1999 . Anomalous relaxations and chemical trends at III-V semiconductor nitride nonpolar surfaces . Phys. Rev. B. , 59 : 12
   Google Scholar
• Belabbas , I. , Nouet , G. and Komninou , Ph. 2007 . Atomic core configurations of the a-screw basal dislocation in wurtzite GaN . J. Cryst. Growth. , 300 : 212 – 216 .
   Google Scholar
• Grzegory , I. 2001 . High pressure growth of bulk GaN from solutions in gallium . J. Phys-Condens Mat. , 13 : 1 – 18 .
   Google Scholar
• Freeman , J. C. 2003 . “ Basic equations for the modeling of gallium nitride high electron mobility transistors ” . NASA .
   Google Scholar
• Lima , L. F. C. P. , Godoy , A. L. E. and Muccillo , E. N. S. 2003 . Elastic modulus of porous Ce-TZP ceramics . Mater. Lett. , 58 : 172 – 175 .
   Web of Science ®Google Scholar
• Weyers , M. , Richter , E. , Hennig , C. , Hagedorn , S. , Wernicke , T. and Tränkle , G. 2008 . GaN substrates by HVPE . Light-emitting diodes: research, manufacturing, and applications XII, Proc. SPIE. , 6910 : 69100l
   Google Scholar
• Lord , J. D. and Morrell , R. 2006 . “ Measurement good practice guide no. 98: elastic modulus measurement ” . National Physics Laboratory .
   Google Scholar
• Deger , C. , Born , E. , Angerer , H. , Ambacher , O. , Stutzmann , M. , Hornstein , J. , Riha , E. and Fischeruer , G. 1998 . Sound velocity of AlxGa1-xN thin films obtained by surface acoustic/wave measurements . Appl. Phys. Lett. , 72 : 2400
   Google Scholar
• Polian , A. , Grimsditch , M. and Grzegory , I. 1996 . Elastic constants of gallium nitride . J. Appl. Phys. , 79 : 3343
   Web of Science ®Google Scholar
• Tagaki , Y. 1996 . Brillouin scattering study of the GaN epitaxial layer . Phys. B Condensed Matter. , 219 : 547 – 549 .
   Google Scholar
• Yamaguchi , M. 1997 . Brillouin scattering study of gallium nitride: elastic stiffness constants . J. Phys. Condens. Matt. , 9 : 241 – 248 .
   Google Scholar
• Yamaguchi , M. 1999 . Brillouin scattering study of bulk GaN . J. Appl. Phys. , 85 : 8502
   Web of Science ®Google Scholar
• Kim , K. , Lambrecht , W. R. L. and Segall , B. 1996 . Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN . Phys. Rev. B. , 53 ( 24 ) : 16310 – 16326 .
   Google Scholar
• Wright , A. 1997 . Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN . J. Appl. Phys. , 82 : 2833 – 2839 .
   Web of Science ®Google Scholar
• Schwarz , R. B. , Kachaturyan , K. and Weber , E. R. 1997 . Elastic moduli of gallium nitride . Appl. Phys. Lett. , 70 : 1122
   Google Scholar
• Deguchi , T. 1999 . Structural and vibrational properties of GaN . J. Appl. Phys. , 86 : 1860
   Google Scholar
• Savastenko , V. A. and Sheleg , A. U. 1978 . Phys. Stat. Sol. A , 48 : K135
   Google Scholar
• Kim , K. , Lambrecht , W. R. L. and Segall , B. 1994 . Electronic structure of GaN with strain and phonon distortions . Phys. Rev. B. , 50 ( 3 ) : 1502 – 1505 .
   Web of Science ®Google Scholar
• Sheleg , A. U. and Savastenko , V. A. 1979 . Determination of elastic constants of hexagonal crystals from measured values of dynamic atomic displacements . Inorg Mater , 15 : 1257 – 1260 .
   Google Scholar
• Reeber , R. R. and Wang , K. 2000 . Lattice parameters and thermal expansion of GaN . J. Mater. Res. , 15 : 40 – 44 .
   Web of Science ®Google Scholar
• Azuhata , T. , Sota , T. and Suzuki , K. 1996 . Elastic constants of III-V compound semiconductors: modification of Keyes’ relation . J. Phys. Condens. Matt. , 8 : 3111
   Google Scholar
• Zener , C. 1948 . Elasticity and Anelasticity of Metals , University of Chicago Press .
   Google Scholar
• Ranganathan , S. I. and Ostoja-Starzewski , M. 2008 . Universal elastic anisotropy index . Phys. Rev. Lett. , 101 : 055504
   PubMed Web of Science ®Google Scholar
• Nikolaev , V. I. , Shpeizman , V. V. and Smirnov , B. I. 2000 . Determination of elastic moduli of GaN epitaxial layers by microindentation technique . Phys. Solid State , 42 ( 3 ) : 437 – 440 .
   Google Scholar
• Cimalla , V. , Pezoldt , J. and Ambacher , O. 2007 . Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications . J. Phys. D Appl. Phys. , 40 : 6386 – 6434 .
   Web of Science ®Google Scholar
• Ambacher , O. , Eickhoff , M. , Link , A. , Hermann , M. , Stutzmann , M. , Bernardini , F. , Fiorentini , V. , Smorchkova , Y. , Speck , J. , Mishra , U. , Schass , W. , Tilak , V. and Eastman , L. F. 2003 . Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures Part A . Phys. Status Solidi C , 6 : 1878 – 1907 .
   Google Scholar
• Yadav , R. R. and Pandey , D. K. 2006 . Ultrasonic characterisation of gallium nitride . Mater. Res. Innov. , 10 ( 4 ) : 402 – 407 .
   Google Scholar
• Kim , J. , Cho , D. and Muller , R. S. 2001 . Why is (111) silicon a better mechanical material for MEMS? . P. Transducers 2001 , : 662 – 665 .
   Google Scholar
• Cho , C.-H. 2009 . Characterization of Young's modulus of silicon versus temperature using a “beam deflection” method with a four-point bending fixture . Curr. Appl. Phys. , 9 : 538 – 545 .
   Google Scholar
• Jeong , J.-H. , Chung , S.-H. , Lee , S.-H. and Kwon , D. 2003 . Evaluation of elastic properties and temperature effects in Si thin films using an electrostatic microresonator . J. Microelectromech. Syst. , 12 ( 4 )
   Google Scholar
• Mano , J. F. and Cahon , J. P. 2004 . A simple method for calibrating the temperature in dynamic mechanical analysers and thermal mechanical analysers . Polym. Test. , 23 : 423 – 430 .
   Google Scholar
• Leonard , T. and Gooberman , G. 1992 . An investigation into DMTA clamping problems . Meas. Sci. Technol. , 3 : 275 – 282 .
   Google Scholar
• Alves , N. M. , Mano , J. F. and Gomez Ribelles , J. L. 2003 . Analysis of the thermal environment inside the furnace of a dynamic mechanical analyser . Polym. Test. , 22 : 471 – 481 .
   Web of Science ®Google Scholar
• Suceska , M. , Liu , Z. Y. , Musanic , S. M. and Fiamengo , I. 2010 . Numerical modelling of sample-furnace thermal lag in dynamic mechanical analyser . J. Therm. Anal. Calorim. , 100 : 337 – 345 .
   Google Scholar
• Hall , J. J. 1967 . Electronic effects in the elastic constants of n-type silicon . Phys. Rev. , 161 ( 3 )
   Google Scholar
• Ono , N. , Kitamura , K. , Nakajima , K. and Shimanuki , Y. 2000 . Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method . Jpn. J. Appl. Phys. , 39 : 368 – 371 .
   Google Scholar