Study on Surface Passivation Homogeneity of Gallium Antimonide using Photoluminescences

References

• Papis , E. , Piotrowska , A. , KaminHska , E. , Goaszewska , K. , Jung , W. , Katcki , J. , Kuda , A. , Piskorski , M. , Piotrowski , T. T. and Adamczewska , J. 2000 . Sulfered treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures . Vacuum. , : 171 – 178 .
   Google Scholar
• Robinson , J. A. and Mohney , S. E. 2004 . Characterization of sulfur passivated n-GaSb using transmission electron microscopy and the influence of passivation on ohmic contact resistance . Journal of Applied Physics , 96 ( 5 )
   Google Scholar
• Olvera-Cervantes , J. , Plaza , J. L. and Dieguez , E. 2009 . The role of Ce dopant on the electrical properties of GaSb single crystals, measured by far-infrared Fourier transform spectroscopy . Semicond. Sci. Technology , 5 ( 10 ) : 24
   Google Scholar
• Liu , Z. Y. and Kuech , T. F. 2003 . A comparative study of GaSb 100 surface passivation by aqueous and nonaqueous solutions . Applied Physics Letters , 83 ( 13 ) : 29
   Web of Science ®Google Scholar
• Tong , Peng , Ling , Ye and Kaiming , Zhang . 1995 . The saturation of dangling bond on GaAs surface by sulfer . Journal of Fudan University (Natural Science) , 34 ( 2 ) : 4
   Google Scholar
• Zengxia , Tian , Bifeng , Cui , Chen , Xu , Xiongwen , Shu and Guangdi , Shen . 1996 . Study of (NH4)2S passivation with facet of 808 nm laser diodes . Research & Progress of SSE , 26 ( 2 )
   Google Scholar
• Chunquan , Zhuang , Yingwen , Tang , Yangcheng , Huang , Yanqiu , Lü and Haime , Gong . 2005 . Electric characterization of ZnS/InP interface after (NH4)2S sulfidation treatment . Chinese Journal of Semiconductor , 26 ( 10 ) : 10
   Google Scholar
• JiSen , Li and Xun , Wang . 1995 . GaAs and other semiconductor surface sulfur passivation . Progress in Physics , 5 ( 2 ) : 6
   Google Scholar
• Wang , H. , Mohney , S. E. and Robinson , J. A. 2004 . Sulfur passivation for shallow Pd/W/Au ohmic contacts to p-InGaSb . Applied Physics Letters , 85 ( 16 ) : 18 a and
   Google Scholar
• Yamaguchi , T. , Kan , H. , Makino , T. , Ohshimo , K. , Aoyama , M. , Kumagawa , M. , Rowe , N. L. and Rinfret , R. 1997 . Sulphur passivation of InAs . Applied Surface Science , : 113 – l14 .
   Google Scholar
• Guang , Li Xiao , Xiang , Wang Tong , Bai , Li Xiao and Rui-xia1 , Yang . 1996 . Experimental study of sulfur passivation on GaAs FET saturated drain-source current . Journal of Hebei University of Technology , : 33
   Google Scholar
• Eftekhari , G. 2002 . Electrical properties of sulfur-passivated III–V compound devices . Vacuum. , 81–90 ( 67 ) : 35
   Google Scholar
• Dutta , P. S. , Sangunni , K. S. and Bhat , H. L. 1994 . Sulphur passivation of gallium antimonide surfaces . Appl. Phys. Lelt. , 65 ( 13 ) : 26
   Google Scholar
• Papis , E. , Piotrowska , A. , KaminHska , E. , Goaszewska , K. , Jung , W. , Katcki , J. , Kuda , A. , Piskorski , M. , Piotrowski , T. T. and Adamczewska , J. 2000 . Sulfde treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures . Vacuum. , 171–178 ( 7 ) : 13
   Google Scholar
• Ling , Liu Chun . “ Study on passivation processing of the cavity surface and nonabsorbing window technology of high power LDs ” . unpublished
   Google Scholar
• Moneky , S. E. , Liu , Z. Y. , Kuech , T. F. and Saulys , D. A. 2003 . Sulfur passivation for shallow Pd/W/Au ohmic contacts to p-InGaSb . Appl. Phys. Lett. , : 83
   Google Scholar
• Salesse , A. , Alabedra , R. , Chen , Y. , Lakrimi , M. , Nicholas , R. J. , Masonz , N. J. and Walker , P. J. 1997 . Improved photoluminescence from electrochemically passivated GaSb . Semicond. Sci. Technol. , 413–418 ( 12 ) : 43
   Google Scholar
• Kang , XPSC. K. , Yuldashev , Sh. U. , Leem , a J. H. , Ryu , Y. S. , Hyun , J. K. , Jung , H. S. , Kim , H. J. and Kang , T. W. 2000 . Surface passivation by sulfur treatment of undoped p-CdTe. 100 . Jounal of Applied Physics , 88 ( 4 ) : 8 – 15 .
   Google Scholar
• Liu , Z. Y. and Kuech , T. F. 2003 . A comparative study of GaSb .100. surface passivation by aqueous and nonaqueous solutions . Applied Physics Letter , 83 ( 13 ) : 29
   Web of Science ®Google Scholar
• Guang-ping , Li , Qiong-na , R U , Jing , Li , Xiu-kun , He , Shouyin , Wang and Zuxiang , Chen . 2000 . Characterization of PL mapping for SI-GaAs wafer . Journal of Function Almaterials and Device ,
   Google Scholar
• Ping , Li Guang and Na , Ren Qing . 1999 . The study of PL Mapping in SI- GaAs material and device performance . Modern Instrument. , : 4
   Google Scholar