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Integrated Ferroelectrics
An International Journal
Volume 140, 2012 - Issue 1
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Original Articles

I-V Characteristics of a Static Random Access Memory Cell Utilizing Ferroelectric Transistors

Crystal Laws Mccartney Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Alabama, 35899
,
Cody Mitchell Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Alabama, 35899
,
Mitchell Hunt Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Alabama, 35899
,
Todd C. Macleod National Aeronautics and Space Administration, National Space Science and Technology Center, Huntsville, Alabama, 35812
&
Fat D. Ho Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Alabama, 35899
Pages 35-41 | Received 30 Jun 2012, Accepted 10 Oct 2012, Published online: 18 Dec 2012

References

  • Mitchell , C. , McCartney , C. L. , MacLeod , T. C. and Ho , F. D. 2012 . Characteristics of a Nonvolatile SRAM Cell Utilizing a Ferroelectric Transistor . Integrated Ferroelectrics , 132 : 82 – 87 .
  • Singh , A. K. 2011 . Digital VLSI Design , New Delhi : Prentice Hall of India .
  • Kang , S. and Leblebici , Y. 2003 . CMOS Digital Integrated Circuits: Analysis and Design , New York : McGraw Hill .
  • Pittet , A. and Kandaswamy , A. 2005 . Analog Electronics , New Delhi : Prentice Hall of India .
  • Evans , J. 2011 . Modeling Radiant Thin Ferroelectric Film Transistors , Radiant Technologies, Inc. .
  • MacLeod , T. C. and Ho , F. D. 2001 . I-V Characteristics of a Ferroelectric Field-Effect Transistor . Integrated Ferroelectrics , 34 : 21 – 26 .
  • Evans , J. 2012 . personal communication Sept
  • Seager , C. H. , McIntyre , D. , Tuttle , B. A. and Evans , J. 1995 . Mechanisms for the Operation of Thin Film Transistors on Ferroelectrics . Integrated Ferroelectrics , 6 : 47 – 68 .
  • Phillips , T. A. , MacLeod , T. C. and Ho , F. D. 2008 . Modeling of a Ferroelectric Field-Effect Transistor Static Random Access Memory Cell . Integrated Ferroelectrics , 96 : 69 – 74 .

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