Nano-Device Modeling for Charge-Sensitive Infrared Photodetector Used in Very Long Wavelength and THz

References

• Komiyama , S. , Astafiev , O. , Antonov , V. , Kutsuwa , T. and Hirai , H. 2000 . A Single-Photon Detector in the Far Infrared Range . Nature (London) , 403 : 405 – 407 .
   PubMed Web of Science ®Google Scholar
• Astafiev , O. , Komiyama , S. , Kutsuwa , T. , Antonov , V. , Kawaguchi , Y. and Hirakawa , K. 2002 . Single-Photon Detector in the Microwave Range . Appl. Phys. Lett. , 80 : 4250 – 4252 .
   Web of Science ®Google Scholar
• Hashiba , H. , Antonov , V. , Kulik , L. , Tzalenchuk , A. , Kleinschmid , P. , Giblin , S. and Komiyama , S. 2006 . Isolated Quantum dot in Application to Terahertz Photon . Counting. Phys. Rev. B , 73 : 081310:1 – 081310:4 .
   Google Scholar
• Ueda , Takeji , Zhenghua , An , Kazuhiko , Hirakawa and Susumu , Komiyama . 2008 . Charge-Sensitive, Infrared Phototransistors: Characterization by an All-Cryogenic Spectrometer . J. Appl. Phys. , 103 : 093109:1 – 093109:7 .
   Google Scholar
• Ueda , Takeji and Komiyama , Susumu . 2010 . Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range . Sensors , 10 : 8411 – 8423 .
   Web of Science ®Google Scholar
• henghua , An , Chen , Jeng-Chung , Ueda , T. , Komiyama , S. and Hirakawa , K. 2005 . Infrared Phototransistor Using Capacitively Coupled Two-Dimensional Electron Gas Layers . Appl. Phys. Lett. , 86 : 172106:1 – 172106:3 .
   Google Scholar
• Zhenghua , An , Ueda , T. , Jeng-Chung , Chen , Komiyama , S. and Hirakawa , K. 2006 . A Sensitive Double-Quantum-Well Infrared Phototransistor . J. Appl. Phys. , 100 : 044509:1 – 044509:7 .
   Google Scholar
• An , Z. , Ueda , T. , Hirakawa , K. and Komiyama , S. 2007 . Reset Operation of Quantum-Well Infrared Phototransistors . IEEE Trans. Electron. Devices , 54 : 1776 – 1780 .
   Web of Science ®Google Scholar
• Takeji , Ueda , Susumu , Komiyama , Zhenghua , An , Nagai , Naomi and Hirakawa , Kazuhiko . 2009 . Temperature Dependence of the Performance of Charge-Sensitive Infrared Phototransistors . J. Appl. Phys. , 105 : 064517:1 – 064517:8 .
   Google Scholar
• Nickels , P. , Matsuda , S. , Ueda , T. , Zhenghua , An and Komiyama , S. 2010 . Metal Hole Arrays as Resonant Photo-Coupler for Charge Sensitive Infrared Phototransistors . IEEE J. Quantum Electron. , 46 : 384 – 389 .
   Web of Science ®Google Scholar
• Zhihai , Wang , Komiyama , S. , Ueda , T. and Nagai , N. 2009 . A Modified Scheme of Charge-Sensitive Infrared Phototransistor . Appl. Phys. Lett. , 95 : 022112:1 – 022112:3 .
   Google Scholar
• Zhihai , Wang , Susumu , Komiyama , Takeji , Ueda , Mikhail , Patrashin and Hosako , Iwao . 2010 . Charge-Sensitive Infrared Phototransistor for 45 μm Wavelength . J. Appl. Phys. , 107 : 094508:1 – 094508:4 .
   Google Scholar
• Ueda , T. Soh , Nagai , Y. , Komiyama , N. and Kubota , S.H. 2009 . unpublished work
   Google Scholar
• Lee , S.-W. , Hirakawa , K. and Shimada , Y. 1999 . Appl. Phys. Lett. , 75 : 1428
   Web of Science ®Google Scholar
• Zhenghua , An , Ueda , T. , Komiyama , S. and Hirakawa , K. 2007 . Metastable Excited States of a Closed Quantum dot with High Sensitivity to Infrared Photons . Phys. Rev. B , 75 : 085417:1 – 085417:7 .
   Google Scholar