Extended Characterization of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

Mitchell R. HuntThe University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USA

Rana SayyahThe University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USA

Cody MitchellThe University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USA

Crystal L. McCartneyThe University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USA

Todd C. MacleodNational Aeronautics and Space Administration, Marshall Space Flight Center, Huntsville, Alabama, 35812, USA

Fat D. HoThe University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, Alabama, 35899, USACorrespondence[email protected]

References

M. Hunt, R. Sayyah, T.C. MacLeod, and F.D. Ho, Characterization of a Common-Source Amplifier Using Ferroelectric Transistors. Integrated Ferroelectrics. 124, 157–166 (2011).
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M. Hunt, R. Sayyah, T.C. MacLeod, and F.D. Ho, Characterization of a Common-Gate Amplifier Using Ferroelectric Transistors. Integrated Ferroelectrics. 134, 121–129 (2012).
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J. Evans, Modeling Radiant Thin Ferroelectric Film Transistors. Technical Report. Radiant Technologies, Inc. (2011).
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R. Sayyah, M. Hunt, F.D. Ho, A physically-derived nonquasi-static model of ferroelectric amplifiers for computer-aided device simulation – Part I: The ferroelectric common-drain amplifier. Solid-State Electronics. 86, 51–57 (2013).
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M. Hunt, An Empirical Study and Modeling on Selected Analog Circuits Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor. Thesis, University of Alabama in Huntsville. 2011.
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Extended Characterization of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

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Extended Characterization of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

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